A5050735434- 2D Materials and Applications
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Advanced Photocatalysis Techniques
- MXene and MAX Phase Materials
- Conducting polymers and applications
- Graphene research and applications
Northwest University
2022-2024
Institute of Modern Physics
2022-2024
Interfacial coupling of Z-scheme CsSnBr 3 /SnS 2 heterostructure induces a narrowing band gap and reduces carrier recombination rate. Coupling interface Br vacancy defects has excellent photovoltaic performance.
A strong Fermi level pinning (FLP) effect can induce a large Schottky barrier in metal/semiconductor contacts; reducing the height (SBH) to form an Ohmic contact (OhC) is critical problem designing high-performance electronic devices. Herein, we report interfacial features and efficient modulation of (ShC) OhC for MoSi2N4/M3C2 (M = Zn, Cd, Hg) van der Waals heterostructures (vdWHs). We find that vdWHs p-type ShC with small SBH calculated factor S ≈ 0.8 contacts. These results indicate FLP be...
It is of great significance to design an efficient heterostructure for photocatalytic hydrogen production solve the energy shortage and environmental crisis. In this letter, we investigate structure, electron interface, optical, charge transfer, mechanism three different ZnIn2S4/α-In2Se3 heterostructures by hybrid density functional calculation. interesting that presence external electric field not only can change bandgap but also modulate band alignment type. Among them, A belongs type II...
Sn‐based perovskite materials with nontoxic, low cost, and unique structure have attracted much attention. However, their efficiency only reaches 14.09% due to the higher carrier recombination rate short lifetime in photovoltaic applications. Herein, interfacial electronic structure, optical absorption, charge transfer mechanism, performance of CsSnBr 3 /MoSe 2 heterostructure are systematically investigated by theoretical calculation experimental observation. The results indicate that...