A5093713571- Semiconductor Quantum Structures and Devices
- Chalcogenide Semiconductor Thin Films
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- ZnO doping and properties
- Nanowire Synthesis and Applications
Paderborn University
2024
Density-functional theory calculations on P-rich InP(001):H surfaces are presented. Depending temperature, pressure and substrate doping, hydrogen desorption or adsorption will occur influence the surface electronic properties. For p-doped samples, charge transition levels of P dangling bond defects resulting from H lead to Fermi level pinning in lower half band gap. This explains recent experimental data. n-doped substrates, H-deficient ground-state structure. below bulk conduction minimum....
Renewable ("green") hydrogen production through direct photoelectrochemical (PEC) water splitting is a potential key contributor to the sustainable energy mix of future. We investigate indium phosphide (InP) as reference material among III–V semiconductors for PEC and photovoltaic (PV) applications. The p(2 × 2)/c(4 2)-reconstructed phosphorus-terminated p-doped InP(100) (P-rich p-InP) surface focus our investigation. employ time-resolved two-photon photoemission (tr-2PPE) spectroscopy study...