A5047548884- Photonic and Optical Devices
- Perovskite Materials and Applications
- Neutrino Physics Research
- Radiation Detection and Scintillator Technologies
- Astrophysics and Cosmic Phenomena
- Advanced Photonic Communication Systems
- Particle Detector Development and Performance
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Photonic Crystals and Applications
- Thermal properties of materials
- Optical Network Technologies
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Semiconductor Lasers and Optical Devices
- Dark Matter and Cosmic Phenomena
- Atomic and Subatomic Physics Research
- Fiber-reinforced polymer composites
- Electron and X-Ray Spectroscopy Techniques
- Radio Frequency Integrated Circuit Design
- Silicon and Solar Cell Technologies
- Advanced Semiconductor Detectors and Materials
- Transition Metal Oxide Nanomaterials
- Silicon Nanostructures and Photoluminescence
- Graphene research and applications
Universidade Estadual de Campinas (UNICAMP)
2012-2024
This study reports on the properties of nitrogen doped titanium dioxide $TiO_2$ thin films considering application as transparent conducting oxide (TCO). Sets were prepared by sputtering a target under oxygen atmosphere quartz substrate at 400 or 500°C. Films then same temperature 150 eV ions. The in Anatase phase which was maintained after doping. Up to 30at% concentration obtained surface, determined situ x-ray photoelectron spectroscopy (XPS). Such high surface lead diffusion into bulk...
Lead iodide (PbI2) is a precursor for the preparation of organolead perovskite (CH3NH3PbI3), which has been used in fabrication highly efficient solar cells. In this work, novel route deposition PbI2 thin films performed by rf sputtering target made from compressed powder. Atomic force microscopy (AFM) and scanning electron (SEM) revealed that produced were uniform, pinhole-free, polycrystalline, had low roughness. A small concentration Pb nanocrystals observed within attributed to...
Er-doped TiO2−xNx films were grown by Ar+ ion-beam sputtering a Ti + Er target under different N2 O2 high-purity atmospheres. The compositional-structural properties of the samples investigated after thermal annealing up to 1000 °C flow oxygen. Sample characterization included x-ray photoelectron spectroscopy, grazing incidence diffraction, Raman scattering, and photoluminescence experiments. According experimental data, both composition atomic structure very sensitive growth conditions...
Abstract Bismuth triiodide (BiI 3 ) has been studied in recent years with the aim of developing lead-free semiconductors for photovoltaics. It also appeared X-ray detectors due to high density element. This material is attractive as an active layer solar cells, or may be feasible conversion into perovskite-like (MA Bi 2 I 9 ), being suitable photovoltaic applications. In this study, we report on thermomechanical properties (stress, hardness, coefficient thermal expansion, and biaxial reduced...
We propose and demonstrate a method to compensate insertion losses in Si photonics devices based on ring resonators fabricated SOI foundries, with no additional chip area used. It consists the employment of Er:Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> as upper cladding layer standard Si/SiO rings, requiring only one simple post-processing step. The is modeled detail,...
Self-ordered Ni nanoparticles grown on TiNxOy-coated crystalline silicon previously sculpted by ion beam bombardment are reported. The samples obtained following a sequential in situ routine deposition procedure. First, Si is Xe+ bombarded, generating regular patterns. Second, thin TiNxOy film the patterned substrate. Immediately, nano-sized nickel particles deposited sputtering and temperature-annealed forming 2D lattice. self-organized islands induced preferential site nucleation coated grooves.
We describe the fabrication optimization of Er-doped Al2O3 films for III-V integrated photonics. Smooth and thick films, with high refractive index Erbium emission in C-band spectrum (1530 nm to 1565 nm) are obtained using co-sputtering technique. Thermal annealing at 850 °C is shown provide highest Photoluminescence intensity films. However, onset crystallization leads large fluctuation index. also show that temperatures larger than 600 causes well intermixing laser structure. Therefore,...
Abstract The adherence of the p-Terphenyl film to substrate in X-ARAPUCA dichroic filter is directly correlated with long-term efficiency and durability this device. This study presents results different cleaning methods established analyze their contributions film's substrate. samples underwent analysis crystalline morphological structure using XRD AFM techniques. Three distinct techniques were employed tests: ultrasonic bath, scratch test, cryogenic immersion method turbulence, as these...
We describe the integration of erbium-doped Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> material with InGaAs/GaAs quantum well lasers emitting at 980 nm, demonstrating possibility integrating III-V based pumping and materials suitable for optical amplification planar photonics. Combining Er-doped compounds is challenging since ion activation usually requires high temperature...
We propose the development of an integrated optical amplifier, consisting a 980 nm emission laser and erbium-doped waveguide. Coupling simulations current fabrication results are presented, which shows that finished device should be able to achieve gain 1.55 dB/cm.
We demonstrate a self-amplified filter based on Silicon Ring Resonators with Er-doped cladding. It is capable of filtering and routing resonant wavelengths, simultaneous signal amplification. An equivalent internal gain 4.7 dB/mm was observed.
A partir da análise do comportamento ótico e estrutura dos filmes antes após a deposição, pretendeu-se averiguar o efeito TiO2 compacto na qualidade material no que concerne aplicações em células solares.Os de foram depositados por ALD temperaturas variadas.Foram obtidos os espectros transmissão, espessura difratograma compactação.O espectro transmissão foi submetido ao PUMA possibilitou obter parâmetros óticos relevantes para fotovoltaicas, como índice refração.Desse modo, resultados...
We propose and demonstrate a low-cost integrated photonic chip fabricated in SOI foundry capable of simultaneously routing amplifying light chip. This device is able to compensate insertion losses routers. It consists standard Si/SiO2 ring resonators with Er:Al2O3 as the upper cladding layer, employed using only one simple post-processing step. resulted measured on/off gain 0.9 dB, footprint smaller than 0.002 mm2, expected bit rates high 40Gb/s based on resonance quality-factor. show that...
Espelhos de Bragg são heteroestruturas alta e seletiva refletividade. O objetivo desse projeto é a simulação, confecção caracterizadação um espelho óptico feito com camadas Al2O/TiO2 outro Al2O3/ZnO. A simulação foi feita no software Mathematica™ caracterização pela medida da refletividade (para ambos espelhos) também difração raios-x, para o estudo camada ZnO.
Foram preparados filmes compactos de dióxido titânio por Deposição Camadas Atômicas (ALD) para aplicação como blocking layer e camada antirrefletora células solares. Os foram depositados a 200°C recozidos 300°C, 400°C 500°C. feitas caracterizações das propriedades termomecânicas partir medidas da tensão residual em função temperatura uma variedade substratos, qual se obtém o coeficiente dilatação térmica dos filmes; nanoindentação, do determina módulo Young razão Poisson filmes.