The development of high-performance optical receivers has been a primary driving force for research on III-V compound avalanche photodiodes (APDs). evolution fiber optic systems toward higher bit rates pushed APD performance bandwidths, lower noise, and gain-bandwidth products. Utilizing thin multiplication regions reduced the excess noise. Further noise reduction demonstrated by incorporating new materials impact ionization engineering with beneficially designed heterostructures. High...

Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-μm-diameter achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; output power at 20 was dBm. smaller /spl sim/100-μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> exhibited 50 mA. The maximum RF 40 17

We report an evanescently coupled photodiode that utilizes a short planar multimode waveguide. Very high responsivity (> 1 A/W) with polarization dependence less than 0.5 dB, 48-GHz bandwidth, and 11-mA saturation current were achieved.

This paper describes the design and performance of two wide-bandwidth photodiode structures. The partially depleted absorber utilizes an absorbing layer consisting both undepleted In/sub 0.53/Ga/sub 0.47/As layers. These photodiodes have achieved saturation currents (bandwidths) >430 mA (300 MHz) 199 (1 GHz) for 100-/spl mu/m-diameter devices 24 (48 mu/m/sup 2/ area devices. Charge compensation has also been utilized in a similar, but modified 0.47/As-InP unitraveling-carrier to predistort...

A high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated. Optical responsivity of 0.58 A/W and over 1.1 W dissipated electrical power achieved. Small signal compression current 110 57 mA measured at radio-frequency bandwidths 1 10 GHz, respectively. This continuous photocurrent believed to be the highest reported value for p-i-n PD these bandwidths.

We report an avalanche photodiode with undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer. The motivation for utilizing layer, which is similar to that in the unitraveling carrier photodiode, reduce dark current. A current below 1 nA at gain of 10 gain–bandwidth product 160 GHz are demonstrated.

Dark current degradation due to 49.7 MeV proton irradiation is studied on lattice-matched indium gallium arsenide (InGaAs) p-i-n photodiodes. This described in terms of electric field-enhanced Shockley–Read–Hall (SRH) generation the depletion region. In this article, we present a model radiation-induced which includes role field through rate enhancement factor (GRFEF). Using combination dark current–voltage and capacitance–voltage measurements, an experimental GRFEF extracted for thermal...

A systematic study of high-saturation-current p-i-n In/sub 0.53/Ga/sub 0.47/As photodiodes with a partially depleted absorber (PDA) has been made under front (p-side) and back (n-side) illumination. The photodiode structure consists an absorption region (450-nm p-InGaAs, 250-nm unintentionally doped InGaAs, 60-nm n-InGaAs) sandwiched between p- n-InP layers. For illumination 34-/spl mu/m-diameter at 2-V bias the saturation currents were 23 24 mA 10 1 GHz, respectively. Under similar...

A high-saturation-current, backside-illuminated In0.53Ga0.47As photodiode with a partially depleted absorber has been fabricated and tested. The 1 dB small-signal compression current was 199 mA at GHz for 100 µm diameter photodiode. large-signal 24 48 an 8 µm-diameter responsivity 0.6 A/ W 1.55 µm.

The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. objective this work is to develop devices compatible with 40-Gb/s applications. Such require high efficiency, ultrawide band, optical power handling capability, compatibility low-cost module fabrication. integration mode size converters improves both the coupling efficiency responsivity a large fiber diameter. Responsivity 0.6 A/W 0.45 achieved 6-/spl mu/m diameter cleaved fiber, respectively,...

A partially depleted absorber photodiode with graded absorption injection regions is reported. The 880-nm-thick In/sub 0.53/Ga/sub 0.47/As region consists of a depletion layer and n- p-type undepleted regions. Under backside illumination at 1.55-μm wavelength, an 8-μm-diameter exhibited increase in bandwidth increasing photocurrent. saturation current product 990 mA /spl middot/ GHz responsivity 0.67 A/W were achieved.

This paper presents the analysis and characterization of partially depleted absorber (PDA) photodiodes. Coupling to these photodiodes is achieved through a planar short multimode waveguide (PSMW) structure. Electric transport in PDA structure has been investigated an equivalent electric circuit was developed. Measurements on 5/spl times/20 /spl mu/m/sup 2/ PSMW have shown 0.80 A/W responsivity with fiber mode diameter as high 6 mu/m. The transverse electric/transverse magnetic polarization...

Beam propagation method simulation shows that evanescently coupled waveguide/photodiodes can be optimized to have absorption lengths as short butt-coupled photodiodes. Efficient focalization of optical power in the absorber is achievable by appropriate choice layer geometry and refractive index. Two AlGaInAs-GaInAs structures been designed for ultrawide-band operation at 60 100 GHz: these devices exhibit internal quantum efficiency high 94% 75%, respectively, 1.55-μm wavelength. Such...

We demonstrate staggered ("type-II") lineup lattice-matched GaAs/sub 0.51/Sb/sub 0.49/-InP unitraveling carrier photodiodes (UTC-PDs) for application near 1.55 μm. The GaAsSb absorbing layer conduction band edge lines up /spl Delta/E/sub C/=0.11 eV above that of InP, and hence, allows the direct injection photogenerated electrons into an InP collector-without any need compositional grading around GaAsSb-InP interface-thus simplifying epitaxial growth device fabrication. InP-GaAsSb UTC-PDs...

Evanescently-coupled avalanche photodiodes utilising a planar short multimode waveguide are demonstrated. These devices exhibit high responsivity (>0.62 A/W at unit gain) with polarisation dependence less than 0.5 dB, broad bandwidth (34.8 GHz low and 160 gain-bandwidth product.

High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited bandwidth of ~18 GHz, large-signal saturation-current ~50 mA, and peak responsivity ~1 A/W. Both the saturation current Au-bonded improved compared with same structure on InP substrate

We present the design and demonstration of unitraveling carrier (UTC) photodiodes fabricated using a novel quantum-well (QW) intermixing metal-organic chemical vapor deposition (MOCVD) regrowth fabrication platform. The discussed here were realized on same chip as high gain centered QW active regions, intermixed passive well waveguides, low optical confinement offset regions regrown over wells. This lifts previous constraints imposed functionality photonic circuits, which forced common...

This work presents a new type of charge-coupled device (CCD) manufactured using CMOS process and featuring capacitive deep trench isolation (CDTI). The is used in multi-pinned phase mode (MPP) enabling almost constant oxide interface passivation. Flatband shift, dark current, charge transfer inefficiency (CTI) induced by total ionizing dose (TID) are investigated. Despite the increase states, results show that current can be efficiently mitigated use short duration, avoiding full depletion...

Total Ionizing Dose (TID) effects are explored in a fully depleted n-type CCD-on-CMOS based on Capacitive Deep Trench Isolation (CDTI). The root cause of the observed degradation Full Well Charge (FWC), Transfer Efficiency (CTE) and Dark current is investigated by discriminating role interface states oxide traps. Biasing conditions irradiation long-term annealing to provide more elements comparison with state art TID modern CMOS devices.

50 GHz bandwidth photodiodes, attaining a compression point of +12 dBm, have been fabricated. The structure design allows an almost complete absorption at 25 µm, corresponding to 0.5 A/W responsivity and gives polarisation dependence as low ±0.1 dB. These components realised with low-cost technology including etched waveguide input facet, antireflection coating on wafer cleaving V-grooves.

This paper presents a new charge coupled device (CCD) based on capacitive deep trench isolation (CDTI), developed in CMOS technology. The 2 phase features collection, storage and transfer the silicon volume. Full Well Charge (FWC) of about 2.6ke-/μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> Transfer Inefficiency (CTI) below 1 × 10 xmlns:xlink="http://www.w3.org/1999/xlink">-4</sup> have been measured via electrical injection pixels...

We report an InGaAs/InP charge compensated uni-traveling-carrier photodiode with thick depletion region RF output power of 600 mW at 2 GHz.

A novel low-cost photoreceiver that combines an erbium-doped waveguide amplifier (EDWA) and a packaged short planar multimode PIN photodiode has demonstrated −21.2 dBm sensitivity at BER 10−10 PRBS of 215−1 for 40 Gbit/s operations.

Evanescent PIN photodiodes are fabricated using all 2"-InP processing including on-wafer mirrors and coatings. 0.73 A/W responsivity at 1.55 /spl mu/m, -1 dB vertical coupling tolerance of 2.2 mu/m 47 GHz bandwidth simultaneously demonstrated.

Charge compensation is utilized to reduce space charge compression in a photodiode. Here we demonstrate an InGaAs/InAlAs uni-traveling-carrier photodiode with compensated InAlAs depletion layer. A bandwidth of 20 GHz and saturation current 45 mA are demonstrated. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)