A5040864701- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Surface Polishing Techniques
- Near-Field Optical Microscopy
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Electron and X-Ray Spectroscopy Techniques
- Quantum and electron transport phenomena
- Semiconductor materials and devices
Leibniz Institute for High Performance Microelectronics
2023-2024
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here, we investigate deformation CMOS-manufactured titanium nitride on a buried 10-nm-thick $\mathrm{Si}/{\mathrm{Si}}_{0.66}{\mathrm{Ge}}_{0.34}$ well means nanobeam scanning x-ray diffraction microscopy. We are able to measure $\mathrm{Ti}\mathrm{N}$-electrode-induced local modulations tensor components in range 2--8...
Abstract Lattice strain in crystals can be exploited to effectively tune their physical properties. In microscopic structures, experimental access the full tensor with spatial resolution at (sub‐)micrometer scale is same time very interesting and challenging. this work, how scanning X‐ray diffraction microscopy, an emerging model‐free method based on synchrotron radiation, shed light complex, anisotropic deformation landscape within three dimensional (3D) microstructures shown. This...
Strain engineering of microstructures serves as an effective method for optimizing electronic and optical properties in semiconductor devices, with applications including the enhancement emission Ge GeSn-based improvement carrier mobility, second harmonic generation Silicon Photonics structures. Current methods deformation characterization semiconductors, such XRD Raman spectroscopy, often require bulky expensive setups are limited vertical resolution. Consequently, techniques capable...
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate deformation CMOS-manufactured titanium nitride on a buried, 10 nm-thick Si/SiGe Quantum Well means nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-induced local modulations tensor components in range $2 - 8 \times 10^{-4}$ ~60 nm lateral resolution. have evaluated that these fluctuations are...