A5089537248- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Semiconductor Lasers and Optical Devices
- Spectroscopy and Laser Applications
- Advanced Optical Sensing Technologies
- Infrared Target Detection Methodologies
- Chalcogenide Semiconductor Thin Films
- Calibration and Measurement Techniques
- Power System Reliability and Maintenance
- Power Systems and Technologies
- Radio Frequency Integrated Circuit Design
- Advanced Battery Technologies Research
- Advancements in Battery Materials
- Advanced DC-DC Converters
- Nanowire Synthesis and Applications
- Quantum Dots Synthesis And Properties
- Acoustic Wave Resonator Technologies
- Silicon Carbide Semiconductor Technologies
- CCD and CMOS Imaging Sensors
- Multilevel Inverters and Converters
- Advanced Battery Materials and Technologies
- Smart Grid and Power Systems
China Southern Power Grid (China)
2024
Hebei University of Technology
2023
Jet Propulsion Laboratory
2002-2017
California Institute of Technology
1991-2004
Space Micro (United States)
1991-2002
We have designed and fabricated an optimized long-wavelength/very-long wavelength two-color quantum well infrared photodetector (QWIP) device structure. The structure was grown on a 3-in semi-insulating GaAs substrate by molecular beam epitaxy (MBE). wafer processed into several 640/spl times/486 format monolithically integrated 8-9 14-15 /spl mu/m (or dual wavelength) QWIP focal plane arrays (FPAs). These FPAs were then hybridized to silicon CMOS readout multiplexers. A thinned (i.e.,...
A 9-/spl mu/m cutoff 256/spl times/256 hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NE/spl Delta/T) of 26 mK achieved. In this paper, we discuss the development very sensitive long wavelength (LWIR) based on GaAs/AlGaAs QWIP focal plane array and its performance in efficiency, NE/spl Delta/T, minimum resolvable (MRTD), uniformity, operability.
A 9-/spl mu/m cutoff 640/spl times/486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP is reported including indoor and outdoor imaging. noise equivalent differential temperature (NE/spl Delta/T) 36 mK achieved at 300 K background with f/2 optics. This in good agreement expected focal plane array sensitivity due to the practical limitations on charge handling capacity multiplexer, read noise, bias voltage, operating temperature.
In this paper, we discuss the development of very sensitive, long wavelength infrared GaAs/Al/sub x/Ga/sub 1-x/As quantum well photodetectors (QWIPs) based on bound-to-quasi-bound intersubband transition, fabrication random reflectors for efficient light coupling, and demonstration a 15-/spl mu/m cutoff 128/spl times/128 focal plane array imaging camera. Excellent imagery, with noise equivalent differential temperature (NE/spl Delta/T) 30 mK has been achieved.
A 9 /spl mu/m cutoff 256/spl times/256 palm-size quantum well infrared photodetector (QWIP) camera weighing only 2.5 lbs, and using 5.5 W of power has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NE/spl Delta/T) 23 mK achieved. It is known that QWIP very low 1/f noise, high operability, uniformity. As result, this uses prerecorded nonuniformity correction table (i.e., gains offsets) stored in its read-only-memory during operation, which enabled the...
This paper describes the performance of planar back-to-back barrier-N-N/sup +/ (bbBNN) devices for frequency multiplier applications. A tripling efficiency 3.3% has been achieved using these in a 200 GHz crossed waveguide mount. is first experimental result with bbBNN multiplier. technique developed characterizing network analyzer, which gives both series resistance and voltage dependent capacitance device. The results are compared theoretical performance, calculated large signal analysis...
Mid-wavelength infrared (MWIR) and long-wavelength (LWIR) InGaAs/GaAs/AlGaAs based quantum well photodetector (QWIP) 320times 256 pixel dualband co-registered simultaneous QWIP focal plane array (FPA) have been demonstrated as pathfinders. In this paper, we discuss the development of 1024 times MWIR/LWIR array.
We have developed a single long-wavelength infrared (LWIR) quantum well photodetector (QWIP) camera for thermography.This has been used to measure the temperature profile of patients.A pixel co-registered simultaneously reading mid-wavelength (MWIR)/LWIR dual-band QWIP was improve accuracy measurements especially with objects unknown emissivity.Even measurement can provide inaccurate results due fact that emissivity is function wavelength.Thus we developing four-band accurate remote object.