Background The triglyceride–glucose (TyG) index has been proposed as a reliable marker of insulin resistance. However, its value in patients with carotid plaque stability remains unclear. This study investigated the association between TyG and unstable plaque. Methods A total 12 068 participants were enrolled. Carotid ultrasound was used to determine Logistic regression analyze relationship evaluated according sex, age, glucose metabolism states. Further, dose–response also determined by...

The presence of vulnerable carotid plaques plays a critical role in ischemic stroke pathogenesis, with intraplaque neovascularization (IPN) serving as key indicator plaque instability. Contrast-enhanced ultrasound (CEUS) provides comprehensive evaluation both surface morphology and microvascular features. This study assesses the utility CEUS identifying plaques, quantifying IPN, predicting risk. involved 91 patients stenosis who underwent endarterectomy (CEA). Preoperative assessments...

C-reactive protein-triglyceride-glucose index (CTI) has been proposed as a novel biomarker for insulin resistance and inflammation. However, the association between CTI risk of stroke, particularly in individuals with different glycemic status, remains unclear. A total 10,443 middle-aged elderly participants were enrolled from China Health Retirement Longitudinal Study (CHARLS). The primary endpoint was occurrence stroke events. calculated using formula 0.412* Ln (CRP [mg/L]) + (TG [mg/dl] ×...

Van der Waals (vdW) heterojunctions between single-walled carbon nanotubes (SWCNTs) and GaAs are potential candidates for optoelectronic devices owing to their direct bandgap, high carrier mobility, diffusion-free atomically sharp interface, flexible device structures. The existence of mixed-chirality SWCNTs suppresses the charge separation transportation photoexcited carriers at interface. Herein, we demonstrate a self-powered broadband photodetector by combining n-type with (6, 5)-enriched...

Purpose – The purpose of this paper is to analyze and summarize the development science technology (S & T) policies in China from a government-driven perspective chronological order. To develop knowledge-based economy, enacts range S T since “Reform Open Policy” started 1978. Furthermore, it investigates overall effects these on university-industry linkages (UILs). Design/methodology/approach This conducts an analysis framework historical sequence explain how government drives UILs...

One-dimensional (In,Ga)As quantum dot (QD) arrays are created on planar singular, vicinal, and shallow mesa-patterned GaAs (100) substrates by self-organized anisotropic strain engineering of an (In,Ga)As∕GaAs wire (QWR) superlattice template in molecular beam epitaxy. On singular substrates, highly uniform single QD along [0−11] formed. [011] stripe-patterned the generated type-A -B steps distinctly affect surface migration processes which crucial for QWR development, i.e.,...

InAs quantum dash (QDH) and dot (QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The laser active zones with multiple stacked layers exhibit lasing wavelength at 1.55μm. On these devices, the experimental threshold current density reaches its minimum value for a double QDH/QD structure. Other basic properties such as gain efficiency compared. QD better densities but equivalent modal per layer than QDH. Finally, analysis of shows promising potential improvement.

We report on the uniformity improvement of InAs quantum dashes (QDHs) grown by molecular beam epitaxy InP (100) through optimizing double cap technique. Broad-area lasers were fabricated with an emission wavelength 1.58 μm. A threshold current density 360 A/cm2 was achieved for a five stack QDH structure and cavity length 1.2 mm. This results from reduced inhomogeneous broadening (62 meV) lower internal optical losses (7 cm−1). The achievement paves way toward ultralow semiconductor laser...

The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100) pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaks are observed from individual single QDs with wavelength tuned into the 1.55μm telecom region insertion ultrathin GaAs interlayers beneath QDs. Regrowth a passive waveguide structure around establishes submicrometer-scale active-passive integration for efficient microcavity...

The purpose of this study was to investigate the landing kinematics (LK) pedestrians and cyclists provide an analysis influencing factors. A total 112 pedestrian cases 51 cyclist with video information were analysed. results showed that pedestrians' cyclists' depends on vehicle front-end shape impact velocity. In LK1, pedestrian/cyclist body had a clear rotation speed during ground contact. case, 71% 39% found head firstly contact ground. most frequent LK2, thrown upward-forward then landed...

Low energy conversion efficiency and low output power are the major limiting factors of isotope batteries as miniature supplies for broad applications, such micro-electromechanical systems aerospace electronics. In this work, highly efficient x-ray radioluminescent demonstrated based on single-crystal scintillators spectra-matched photovoltaic batteries. X-ray sources chosen to reduce backscattering loss, cerium doped Gd3Al2Ga3O12 (GAGG:Ce) adopted improve radioluminescence light coupling...

InGaAs solar cells were irradiated by 1060-1080nm continuous wave (CW) laser, and studied the laser-electrical conversion damage experiment with power density as 97mW/cm2 507W/cm2 respectively. The result indicated that there is no obvious phenomenon but air layer appeared in damaged region, direct relationship between area extent of damage. Moreover, p-n junction zone was destroyed, lost ability photoelectric conversion. region acts a resistance two electrodes, resulting an increase leakage...

Abstract The GaAs X‐ray nuclear battery without and with the phosphor layer was investigated under irradiation of tube. output power significantly improved by introducing ZnS : Cu or (Zn,Cd)S layer, but not Ag because degree spectral matching between device. To analyze radioluminescence (RL) effects layers excitation, we measured RL spectra different layers. revealed their fluorescence in wavelength range approximately 375–675 nm. Light at exact can be used device to produce electricity....

Abstract InAs quantum dash and dot (QDH QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The with active zone containing multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double QDH/QD structure. Other basic laser properties like gain efficiency compared. QD better densities but equivalent modal per layer than QDH. Finally, analysis of structures shows promising...

We report on the optical properties of threefold stacked InGaAs sidewall quantum wires (QWires) with quaternary InGaAsP barriers grown shallow-patterned InP (311)A substrates by chemical beam epitaxy. Temperature dependent photoluminescence (PL) reveals efficient carrier transfer from adjacent wells (QWells) into QWires at low temperature, thermally activated repopulation QWells higher and negligible localization carriers along QWires. Strong broadening power PL indicates enhanced state...

Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold for infinite cavity length of 225 A/cm2 (∼45 per stack) is obtained from a five-stack laser structure. The characteristic temperature above room 52K, and this relatively low value results carrier leakage into barrier (waveguide) region.

The photoelectric properties of In0.3Ga0.7As solar cells applied in laser wireless power transmission (LWPT) were studied when they irradiated by 1070 nm continuous wave (CW) various intensities. influences intensity on cell parameters extracted the pollination algorithm analyzed quantitatively. Results show that conversion efficiency rose to maximum and then decreased rapidly range 50–900 mW/cm2. With higher energy irradiation, rise ideality factor reverse saturation current would lead...

Size, shape, position control, and self-organized lateral ordering of epitaxial semiconductor quantum dot (QD) arrays are demonstrated. This constitutes the prerequisite for ultimate control electronic optical properties man-made heterostructures at single multiple charge, spin, photon level, including their mechanical electromagnetic interactions in view applications such as information processing computing. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

(In,Ga)As sidewall quantum wires (QWires) are realized by chemical beam epitaxy along [01-1] mesa stripes on shallow-patterned InP (311)A substrates. The QWires exhibit strong lateral carrier confinement due to larger thickness and In composition compared the adjacent wells, as determined cross-sectional scanning-tunneling microscopy microphotoluminescence (micro-PL) spectroscopy. PL of with quaternary (Ga,In)(As,P) barriers reveals narrow linewidth, high efficiency, large energies 60–70meV....

Highly strained InAs quantum dots (QDs) embedded in InGaAsP are formed at the fast-growing [01−1] mesa sidewall on shallow-patterned InP (311)A substrates by chemical beam epitaxy. Temperature dependent photoluminescence (PL) reveals efficient carrier transfer from adjacent dashlike QDs planar areas to larger resulting well-distinguishable emission around 80K. The large high-energy shift of PL as a function excitation power density is ascribed screening internal piezoelectric field. linear...