A5106622921- Optical and Acousto-Optic Technologies
- GaN-based semiconductor devices and materials
- Advanced Optical Sensing Technologies
- Advanced Vision and Imaging
- Photocathodes and Microchannel Plates
- Plasma Diagnostics and Applications
- Photonic and Optical Devices
- Optical measurement and interference techniques
- 3D Surveying and Cultural Heritage
Southeast University
2024
Wuhan University of Technology
2009
Peking University
2007
This article presents a projection system with novel composite pattern for one-shot acquisition of 3D surface shape. The is composed color encoded stripes and cosinoidal intensity fringes, parallel arrangement. stripe edges offer absolute height phases high accuracy, the fringes provide abundant relative involved in distribution. Wavelet transform utilized to obtain phase distribution fringe pattern, measured by triangulation are combined calibrate data unwrapping, so as eliminate initial...
Gallium nitride (GaN) films grown on sapphire substrates were successfully separated and transferred onto silicon (Si) using the laser lift-off (LLO) process induced by an excimer pulsed laser. The structural optical properties of GaN before after LLO characterized x-ray diffraction, atomic force microscopy Raman spectroscopy. influences scanning speed thin have been studied, which demonstrated that alters quality films. results show is dependent parameter.
Addressing the challenges posed by high-speed data caching and transmission in readout circuit of a GM-APD array, this paper implements integrated (ROIC) adopting on-chip memory on basis classical digital timing architecture. On-chip technology satisfies storage requirements multi-echo with limited pixel area improves frame rate. Based 55nm BCD process, 32×32 array ROIC is proposed, system less than 50μm×50μm, maximum rate reaches up to 58kHz.The can realize 350ps average time resolution...