Ioannis Karapatzakis

ORCID: 0009-0009-3513-060X
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About
Contact & Profiles
Research Areas
  • Diamond and Carbon-based Materials Research
  • Mechanical and Optical Resonators
  • Semiconductor materials and devices
  • Quantum Information and Cryptography
  • Integrated Circuits and Semiconductor Failure Analysis
  • Quantum and electron transport phenomena
  • Topological Materials and Phenomena
  • Advancements in Semiconductor Devices and Circuit Design

Karlsruhe Institute of Technology
2024-2025

Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect coherent spin levels. The negatively charged tin-vacancy (SnV) center possesses long electron lifetimes its large spin-orbit splitting. However, the magnetic dipole required microwave control suppressed, strain is necessary enable these transitions. Recent work has shown of strained emitters using lines suffer from...

10.1103/physrevx.14.031036 article EN cc-by Physical Review X 2024-08-27

Quantennetzwerke zur Verteilung verschränkter Zustände könnten künftig sichere Kommunikation, vernetzte Quantensensoren und die Verknüpfung von Quantencomputern ermöglichen. Dafür werden langlebige Quantenspeicher benötigt, effizient mit Licht adressiert können. Unser Team konnte nun erstmals einem supraleitenden Mikrowellenleiter volle Quantenkontrolle lange Quantenspeicherzeiten für ein einzelnes Zinn‐Fehlstellenzentrum in Diamant demonstrieren.

10.1002/piuz.202570104 article DE Physik in unserer Zeit 2025-01-01

Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect coherent spin levels. The negatively charged tin-vacancy (SnV) center possesses long electron lifetimes its large spin-orbit splitting. However, the magnetic dipole required microwave control suppressed, strain is necessary enable these transitions. Recent work has shown of strained emitters using lines suffer from...

10.48550/arxiv.2403.00521 preprint EN arXiv (Cornell University) 2024-03-01
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