We investigated the physical properties of molybdenum disulfide (MoS2) atomic crystals with a sulfur vacancy passivation after treatment alkanethiol molecules including their electrical, Raman, and photoluminescence (PL) characteristics. MoS2, one transition metal dichalcogenide materials, is promising two-dimensional semiconductor material good properties. It known that vacancies exist in resulting n-type behavior MoS2. The on MoS2 surface tend to form covalent bonds sulfur-containing...

Recently, two-dimensional materials such as molybdenum disulfide (MoS2) have been extensively studied channel for field effect transistors (FETs) because MoS2 has outstanding electrical properties a low subthreshold swing value, high on/off ratio, and good carrier mobility. In this study, we characterized the photo-responsive of FET when stacking p-type organic copper phthalocyanine (CuPc) layer on surface. We observed that threshold voltage could be controlled by CuPc layers due to charge...

Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is essential meeting the versatile requirements future electronic and optoelectronic devices. Because semiconductors, including TMDCs, typically involves generation charged dopants that hinder charge transport, tackling Coulomb scattering induced by externally introduced remains a key challenge in achieving ultrahigh mobility 2D semiconductor systems. In this...

Non-reciprocal electronic transport in a spatially homogeneous system arises from the simultaneous breaking of inversion and time-reversal symmetries. Superconducting Josephson diodes, key ingredient for future non-dissipative quantum devices, have recently been realized. Only few examples vertical superconducting diode effect reported its mechanism, especially whether intrinsic or extrinsic, remains elusive. Here we demonstrate substantial supercurrent non-reciprocity van der Waals junction...

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have gained considerable attention as an emerging semiconductor due to their promising atomically thin film characteristics with good field-effect mobility and a tunable band gap energy. However, electronic applications been generally realized conventional inorganic electrodes dielectrics implemented using photolithography or transferring processes that are not compatible large-area flexible device applications. To facilitate the...

Abstract Organic semiconductors (OSCs) have been widely studied due to their merits such as mechanical flexibility, solution processability, and large‐area fabrication. However, OSC devices still overcome contact resistance issues for better performances. Because of the Schottky at metal–OSC interfaces, a non‐ideal transfer curve feature often appears in low‐drain voltage region. To improve properties OSCs, there several methods reported, including interface treatment by self‐assembled...

Abstract Although 2D molybdenum disulfide (MoS 2 ) has gained much attention due to its unique electrical and optical properties, the limited contact semiconductors still impedes realization of high‐performance MoS ‐based devices. In this regard, many studies have been conducted improve carrier‐injection properties by inserting functional paths, such as graphene or hexagonal boron nitride, between electrodes semiconductors. The reported strategies, however, require relatively time‐consuming...

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. observed that hybrid heterojunctions were gate-tunable and strongly affected by trap-assisted tunnelling through van der Waals gap at interfaces between MoS2 pentacene. The pentacene/MoS2 diodes had high ideality factor, which resulted from conduction nature From temperature-variable current-voltage measurement, a space-charge-limited variable range hopping...

As two-dimensional (2D) transition metal dichalcogenides electronic devices are scaled down to the sub-micrometer regime, active layers of these materials exposed high lateral electric fields, resulting in electrical breakdown. In this regard, understanding intrinsic nature layer-stacked 2D semiconducting under fields is necessary for reliable applications their field-effect transistors. Here, we explore breakdown phenomena originating from avalanche multiplication MoS2 transistors with...

Recently, there have been numerous studies on utilizing surface treatments or photosensitizing layers to improve photodetectors based 2D materials. Meanwhile, avalanche breakdown phenomenon has provided an ultimate high-gain route toward photodetection in the form of single-photon detectors. Here, authors report ultrasensitive phototransistors monolayer MoS2 synthesized by chemical vapor deposition. A lower critical field for electrical under illumination shows strong evidence initiated...

Abstract The controllability of carrier density and major type transition metal dichalcogenides(TMDCs) is critical for electronic optoelectronic device applications. To utilize doping in TMDC devices, it important to understand the role dopants charge transport properties TMDCs. Here, effects molecular on tungsten diselenide (WSe 2 ) are investigated using three p‐type dopants, 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F 4 ‐TCNQ), tris(4‐bromophenyl)ammoniumyl...

Spin-triplet supercurrent spin valves are of practical importance for the realization superconducting spintronic logic circuits. In ferromagnetic Josephson junctions, magnetic-field-controlled non-collinearity between spin-mixer and spin-rotator magnetizations switches spin-polarized triplet supercurrents on off. Here we report an antiferromagnetic equivalent such spin-triplet in chiral junctions as well a direct-current quantum interference device. We employ topological antiferromagnet...

ZnO films were prepared on Si(100) substrates using rf magnetron sputtering and the correlations between growth conditions resultant film properties discussed. The intensity of visible emission related with intrinsic defects in was dramatically suppressed by increasing O2/Ar+O2 ratio growing ambient, which provides further evidence that luminescence originates from oxygen vacancy or Zn interstitial defects. It also certain exciton is strongly dependent size micro-crystallites forming film,...

Recently there has been growing interest in avalanche multiplication two-dimensional (2D) materials and device applications such as photodetectors transistors. Previous studies have mainly utilized unipolar semiconductors the active material focused on developing high-performance devices. However, fundamental analysis of process, particularly ambipolar materials, is required to establish electronic devices emerging architectures. Although 2D advantage facile carrier-type tuning through...

We report two organocompatible strategies to enhance the output performance of all-solution-processed poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thermoelectric generators (TEGs): introducing an additive spray printing process and functionalized polymer interlayers reduce module resistance. The enabled deposition 1-μm-thick PEDOT:PSS layers with a high degree design freedom, resulting in significantly reduced sheet resistance 16 Ω sq-1 that is closely related...

Ruddlesden-Popper (RP) perovskites have attracted a lot of attention as the active layer for optoelectronic devices due to their excellent photophysical properties and environmental stability. Especially, local structural RP shown play important roles in determining performance devices. Here, we report photodetector variation depending on crystallinity n = 4 two-dimensional (2D) perovskite polycrystalline films. Through controlling solvent evaporation rate, 2D films could be tuned between...

We investigated the current-voltage and noise characteristics of two-dimensional (2D) monolayer molybdenum disulfide (MoS2) synthesized by chemical vapor deposition (CVD). A large number trap states were produced during CVD process synthesizing MoS2, resulting in a disordered MoS2 system. The interface density between CVD-grown silicon dioxide was extracted from McWhorter surface model. Notably, generation-recombination which is attributed to charge observed at low carrier regime. relation...

Abstract We investigated the electrical and optoelectronic characteristics of ambipolar WSe 2 field-effect transistors (FETs) via facile p-doping process during thermal annealing in ambient. Through this annealing, oxygen molecules were successfully doped into surface, which ensured higher p-type conductivity shift transfer curve to positive gate voltage direction. Besides, considerably improved photoswitching response FETs achieved by To explore origin changes properties, analyses X-ray...

Controlling trapped charges at the interface between a two-dimensional (2D) material and SiO2 is crucial for stable electrical characteristics in field-effect transistors (FETs). Typically, gate-source bias has been used to modulate charge trapping process with narrow dielectric layer high gate electric field. Here, we observed that can also be affected by lateral drain-source voltage (V DS) FET structure, as well bias. Through multiple V DS sweeps increasing measurement ranges of DS,...

Abstract Organometal halide perovskites have emerged as potential material systems for resistive memory devices besides their outstanding optical and electrical properties. Although halide‐perovskite has the advantage of operating with a low voltage large on/off ratio, random distribution in operation remains challenge application. This stochastic characteristic is due to formation conducting filaments that cause resistance fluctuations material. Therefore, it essential investigate...

Abstract Superconducting diode effects have recently attracted much attention for their potential applications in superconducting logic circuits. Several pathways been proposed to give rise non-reciprocal critical currents various superconductors and Josephson junctions. In this work, we establish the presence of a large effect type-II Dirac semimetal 1T-PtTe 2 facilitated by its helical spin-momentum locking distinguish it from extrinsic geometric effects. The magnitude is shown be directly...