A5080280360- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
- Ion-surface interactions and analysis
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Diamond and Carbon-based Materials Research
- Plasma Diagnostics and Applications
- Electron and X-Ray Spectroscopy Techniques
- Soil and Unsaturated Flow
- Photonic and Optical Devices
- Soil Geostatistics and Mapping
- Soil Carbon and Nitrogen Dynamics
- Semiconductor Quantum Structures and Devices
Shenyang Agricultural University
2024
The University of Texas at Austin
1990-1995
The role of silicon hydride species in the photoluminescence intensity behavior porous Si has been studied. surfaces luminescent samples were converted to a predominate SiH termination using remote H plasma. as-passivated then immersed various concentrations hydrofluouric solutions regulate recovery SiH2 on surface. Photoluminescence measurements and transmission Fourier-transform infrared spectroscopy have shown that predominant monohydride (SiH) results weak photoluminescence. In contrast,...
We have developed a new, minimal damage approach for examination of luminescent porous Si (PS) layers by transmission electron microscopy (TEM). In this approach, chemically etched (CE) PS are fabricated after conventional plan-view TEM sample preparation. Our studies show that crystalline, polycrystalline, and amorphous phases exist in the same CE sample. The microstructure is believed to gradually change from crystalline during chemical etching HF-HNO3-H2O solution. microcrystallites...
Low-temperature growth processes are needed in order to fully exploit the potential of GexSi1−x/Si heterostructures. Remote plasma-enhanced chemical vapor deposition has been successful for silicon homoepitaxy at substrate temperatures as low 150 °C. We report heterostructures with values x between 0.07 and 0.73, 305 450 The films grown °C have excellent crystallinity, defect densities, very abrupt interfaces, while degraded crystallinity.
Hydrogen desorption from (2×1) and (3×1) H-terminated Si(100) surfaces due to irradiation by electron beams with 2–5 keV beam energies has been investigated both experimentally theoretically. Auger spectroscopy (AES) employed monitor Si, O, C signals periodically continuous of an on surfaces. An incubation phenomenon is observed in the time evolution profiles AES for all The period believed be associated required hydrogen Si surface as a result irradiation. Among surfaces, found have greater...
Abstract Mollisols region of China is a ballast stone Chinese food security. In this study, 484 soil organic carbon (SOC) data points from the documented surface (0–20 cm) samples in typical were selected. The regional fertility was divided into high, medium, and low levels based on SOC content long‐term positioning fertilization stations Shenyang, Harbin, Hailun Northeast China. Furthermore, balance point (SOCb) model built driven by factors annual mean temperature, precipitation, effective...
We have used photocurrent measurements to demonstrate a strong electroabsorption effect in GexSi1−x/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition. Large voltage-induced shifts absorption are observed at room temperature the wavelength range from 1.2 1.58 μm. anticipate that results can be extended fabricate GexSi1−x optoelectronic devices operating temperature.
Single-crystal GexSi1−x/Si superlattices have been successfully fabricated using remote plasma-enhanced chemical vapor deposition, a novel low-temperature thin-film growth technique. Reflection high-energy electron diffraction, cross-sectional transmission microscopy (XTEM), plan view TEM, x-ray-diffraction, and secondary-ion mass spectroscopy techniques applied to study the crystallographic properties of superlattice structures. Arrays dislocation lines, which are either parallel or...
GexSi1−x/Si heteroepitaxial thin films have been grown using the low-temperature remote plasma-enhanced chemical vapor deposition (RPCVD) approach, in which substrate is kept from glow discharge, and an Ar plasma employed to indirectly activate reactant gases (SiH4 GeH4) drive reactions. Secondary ion mass spectroscopy (SIMS), plan-view cross-sectional transmission electron microscopy (TEM), situ reflection high-energy diffraction (RHEED) analyze with different Ge mole fractions thicknesses....
The addition of germane and dopant gases significantly alter the growth kinetics low temperature Si epitaxy. Germane, phosphine, diborane have been reported to both enhance retard film rate in various processes. remote plasma enhanced chemical vapor deposition are largely unaffected by GeH4 or situ doping. Adsorption sites created energy ion bombardment only minimally dependent on for activation. Ion-induced gas phase reactions also play an important role via formation precursors which...