A5056347204- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Quantum and electron transport phenomena
- Atmospheric chemistry and aerosols
- Semiconductor Quantum Structures and Devices
- Atmospheric and Environmental Gas Dynamics
- Air Quality Monitoring and Forecasting
- Atmospheric Ozone and Climate
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
Fudan University
1996-2025
The satellite-based tropospheric column ratio of HCHO to NO2 (FNR) is widely used diagnose ozone formation sensitivity; however, its representation surface conditions remains controversial. In this study, an approach construct the 3D spatial distribution FNR in lower troposphere was proposed. Based on satellite and multiaxes-differential Optical Absorption Spectroscopy (MAX-DOAS) data, horizontal vertical distributions have been respectively obtained. To further enhance generalizability...
Quantum confined energy levels and the Coulomb charging effect of holes in self-assembled Ge dots embedded Si barriers are studied using admittance spectroscopy at temperatures above 100 K. Ground state first excited occupancies five to seven identified by varying Fermi-level position under different applied bias voltages measurements. Hole-capture cross sections quantum found be extremely large dependent.
Ozone (O3) profiles are crucial for comprehending the intricate interplay among O3 sources, sinks, and transport. However, conventional monitoring approaches often suffer from limitations such as low spatiotemporal resolution, high cost, cumbersome procedures. Here, we propose a novel approach that combines multiaxis differential optical absorption spectroscopy (MAX-DOAS) machine learning (ML) technology. This allows retrieval of with exceptionally temporal resolution at minute level...
The theoretical expressions of the capacitance-voltage (C-V) characteristics a single quantum well are derived in different bias voltage regions based on solving analytically Poisson's equation. A method to determine parameters, including doping concentrations and barrier, location well, thickness cap layer, as band offset at heterointerface from an experimental C-V curve is presented. By carefully constructing testing sample with structure Al/(thin nitride...
Properties of interface states at Ta2O5/n-Si interfaces are studied by capacitance–voltage and deep-level transient spectroscopy (DLTS) measurements. The results show that the “slow” not significantly affected annealing, their density is about 1.4–1.9×1011 cm−2. energy distribution “fast” interfacial in band gap silicon obtained, some high concentration found. DLTS spectra reveal defects all donor type. located 0.40 eV below conduction-band minimum silicon. Their decreases with increasing...