Yuning Wang

ORCID: 0009-0009-9964-7595
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About
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Research Areas
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced Fiber Laser Technologies
  • Model Reduction and Neural Networks
  • Photorefractive and Nonlinear Optics
  • Computational Physics and Python Applications
  • Laser-Matter Interactions and Applications
  • Solid State Laser Technologies
  • Fluid Dynamics and Turbulent Flows
  • Neural Networks and Applications
  • Time Series Analysis and Forecasting
  • Advanced Data Processing Techniques
  • Generative Adversarial Networks and Image Synthesis
  • Fluid Dynamics and Vibration Analysis
  • Photonic and Optical Devices
  • Ferroelectric and Piezoelectric Materials
  • Reservoir Engineering and Simulation Methods
  • Semiconductor Quantum Structures and Devices
  • Advanced Power Generation Technologies
  • Mass Spectrometry Techniques and Applications
  • 2D Materials and Applications
  • Adaptive optics and wavefront sensing
  • Dielectric properties of ceramics
  • Advanced optical system design

Suzhou Institute of Nano-tech and Nano-bionics
2022-2024

Chinese Academy of Sciences
2022-2024

KTH Royal Institute of Technology
2023-2024

University of Science and Technology of China
2023

Harbin University of Science and Technology
2013-2022

Liaoning University of Technology
2021-2022

Nanjing University of Aeronautics and Astronautics
2022

Shandong University
2022

Rice University
2020

Hebei Agricultural University
2012

Abstract Variational autoencoder architectures have the potential to develop reduced-order models for chaotic fluid flows. We propose a method learning compact and near-orthogonal using combination of β -variational transformer, tested on numerical data from two-dimensional viscous flow in both periodic regimes. The is trained learn latent representation velocity, transformer predict temporal dynamics latent-space. Using disentangled representations latent-space, we obtain more interpretable...

10.1038/s41467-024-45578-4 article EN cc-by Nature Communications 2024-02-14

Abstract High-resolution reconstruction of flow-field data from low-resolution and noisy measurements is interest due to the prevalence such problems in experimental fluid mechanics, where measurement are general sparse, incomplete noisy. Deep-learning approaches have been shown suitable for super-resolution tasks. However, a high number high-resolution examples needed, which may not be available many cases. Moreover, obtained predictions lack complying with physical principles, e.g. mass...

10.1088/1361-6501/ad3fd3 article EN cc-by Measurement Science and Technology 2024-04-17

We report the preparation of amorphous CaCu3Ti4O12/polyimide (a-CCTO/PI) hybrid films for first time. It was found that a relatively high dielectric permittivity, low loss and conductivity were simultaneously achieved in a-CCTO/PI films. Compared with PI matrix CCTO/PI film 10 vol% concentration CCTO, permittivity 3 a-CCTO increased by 29% 16%, respectively. Interfacial polarization relaxation mainly determines properties films, this can guide future ceramic–polymer composites. All...

10.1039/c3tc31757a article EN Journal of Materials Chemistry C 2013-10-16

Variational autoencoders (VAEs) have shown promising potential as artificial neural networks (NN) for developing reduced-order models (ROMs) in the context of turbulent flows. In this study, we propose a method that combines β-VAEs modal decomposition and transformer temporal-dynamics prediction latent space to develop ROMs. We apply our an existing database flow around wall-mounted square cylinder obtained by direct numerical simulation (DNS). A parametric study is performed investigate...

10.1016/j.ijheatfluidflow.2023.109254 article EN cc-by International Journal of Heat and Fluid Flow 2023-11-24

Remote epitaxy is a very promising technique for the preparation of single-crystal thin films flexibly transferred III-V group semiconductors. However, epilayer nucleation mechanism remote and epilayer-substrate interface interactions on both sides graphene are not well-understood. In this study, homo- heteroepitaxy GaN layers (NLs) were performed by metal organic chemical vapor deposition GaN, sapphire (Al2O3), AlN substrates with single-layer graphene, respectively. The results show that...

10.1021/acsami.1c18926 article EN ACS Applied Materials & Interfaces 2022-01-03

Water pollution has become more and important today. A new method was found to handle this problem which is the Anatase thin film between silica layers. This paper illustrates principle of photocatalytic splitting water fabrication TiO2 films in Self-assembling method, making a comparison with other methods. Also, explains reasons for using SiO2 as base superhydrophilicity TiO2SiO2 nano-composite atomic force microscopy(AFM) transmission electron microscopy(TEM). Research being done on...

10.54254/2755-2721/2025.19575 article EN cc-by Applied and Computational Engineering 2025-01-07

We carried out high-resolution large-eddy simulations (LESs) to investigate the effects of several separation-control approaches on a NACA4412 wing section with spanwise width $L_z = 0.6$ at an angle attack $AoA=11^{\circ}$ Reynolds number $Re_c 200,000$ based chord length $c$ and free-stream velocity $U_{\infty}$. Two control strategies were considered: (1) steady uniform blowing and/or suction pressure sides, (2) periodic side. A wide range configurations evaluated in terms aerodynamic...

10.48550/arxiv.2502.07910 preprint EN arXiv (Cornell University) 2025-02-11

Abstract Epitaxial growth of gallium nitride (GaN) by transferring a two-dimensional material on large lattice mismatch substrate can relieve the stress epitaxial layer, which is conducive to improving performance GaN-based devices. However, damage graphene during process limits application this method. In work, GaN films were grown bilayer graphene-coated AlN/sapphire substrates metal-organic chemical vapor deposition. The effects carrier gas and ammonia (NH 3 ) flow rate integrity...

10.35848/1347-4065/adb6e7 article EN Japanese Journal of Applied Physics 2025-02-17

As the diminution of micro-LED pixels advances, pivotal role dislocation phenomena becomes increasingly pronounced. This study provides insight into key characteristics and dominant mechanisms GaN-based micro-LEDs by comparing homoepitaxial heteroepitaxial configurations. Our findings reveal that variability in V-shaped pits distribution markedly influences performance uniformity chips. While micro-LEDs, alongside significantly reduced density residual stress, effectively preclude formation...

10.1364/oe.529771 article EN cc-by Optics Express 2024-06-25

Abstract A series of Sc:Yb:Tm:LiNbO 3 crystals with variable Sc 3+ (0, 1, 2, and mol%) concentration are grown by the Czochralski method. The effective distribution coefficients , Yb Tm ions in determined inductively coupled plasma atomic emission spectrometer. distribute uniformly when reaches up to mol%. influence on dopant occupancy defect structure is investigated IR transmission spectra. Threshold nearly By analyzing UV–vis–NIR absorption spectra, property improved doping ions....

10.1002/crat.201900176 article EN Crystal Research and Technology 2020-04-03

To improve the beam quality of uplink laser, a 37 channel piezo-ceramic deformable mirror was inserted into laser launch optics to compensate static aberrations. An interferometer used as calibration light source well wavefront sensor perform closed-loop correction for moment. About 0.38λ root mean square (rms) aberrations, including mirror's initial figure error, were compensated, and residual error less than 0.07λ rms. Field observations with 2 m optical telescope demonstrated that peak...

10.1364/ao.57.000648 article EN Applied Optics 2018-01-22

Abstract The use of two-dimensional material like graphene to alleviate lattice mismatch has been an effective way realize high-quality GaN on heterogeneous substrates. lack hanging bonds the surface provides a new attempt for epitaxial lateral overgrowth (ELOG). In this study, hexagonal mask was used growth GaN, disappeared during process, but still maintained ELOG mode, and threading dislocation density significantly reduced. Raman PL spectra demonstrated stress relaxation in showed 0.157...

10.35848/1347-4065/ad1e88 article EN Japanese Journal of Applied Physics 2024-02-05

This study delves into the nucleation process of AlN crystal growth on a 6H-SiC substrate using metal-organic chemical vapor deposition technology through molecular dynamics simulations and experimental research. It was found that predominantly exhibits an island mode, with morphologies mainly being triangular hexagonal. paper provides detailed analysis surface morphology atomic structure thin films compares fusion processes crystals. Through simulations, this reveals formation energy...

10.1063/5.0238459 article EN cc-by Applied Physics Letters 2024-12-09

There is near-ultraviolet and yellow light absorption in AlN crystal. The defect of this hampers the transmittance ultraviolet light, which, turn, limits application aluminum nitride substrate deep electronic devices. In paper, sources defects are determined through first principle simulation method cathodoluminescence test four samples with different growth modes on two substrates. peak positions grown by metal–organic chemical vapor deposition were observed at 370 480 nm; hydride phase...

10.1063/5.0136161 article EN cc-by AIP Advances 2023-03-01

Variational autoencoder (VAE) architectures have the potential to develop reduced-order models (ROMs) for chaotic fluid flows. We propose a method learning compact and near-orthogonal ROMs using combination of $\beta$-VAE transformer, tested on numerical data from two-dimensional viscous flow in both periodic regimes. The is trained learn latent representation velocity, transformer predict temporal dynamics space. Using disentangled representations latent-space, we obtain more interpretable...

10.48550/arxiv.2304.03571 preprint EN cc-by arXiv (Cornell University) 2023-01-01

A series of Zn:Yb:Nd:LiNbO 3 crystals with various concentrations Zn[Formula: see text](1 mol.%, 5 mol.% and 7 mol.%) were grown by Czochralski method. The dopant occupancy light-induced scattering ability measured discussed infrared spectra exposure energy flux results show that the absorption peak Zn(7 mol.%):Yb:Nd:LiNbO crystal is blueshift [Formula: text] ion reaches threshold concentration. increased two-orders magnitude compared to Zn(1 crystals.

10.1142/s0217984920500323 article EN Modern Physics Letters B 2020-01-20

The probe absorption spectrum of the Λ-three-level system driven by bichromatic coupling field and weak is investigated. We obtain spectra for different frequency detunings solving density matrix equation numerical analysis. Three electromagnetically induced (EIA) peaks are simultaneously observed in profile field. report dependence position relative intensity EIA on detuning results show that central always appears at resonant field, with constant intensity. secondary vary coupled decrease...

10.1117/12.2001167 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2012-11-29

Lithium niobate is a crystal with excellent electric-optic and nonlinear optical properties. Double-doped multi-doped lithium are widely used in wide variety of devices. A series Zn:Ru:Fe:LiNbO 3 crystals different lithium-niobium molar ([Li]/[Nb]) ratios were grown by the Czochralski method. The structures [Li]/[Nb] analyzed using X-ray diffraction patterns infrared spectra. effect ratio dependence doped element concentration segregation coefficient was studied an inductive coupled...

10.1142/s0217984921505953 article EN Modern Physics Letters B 2022-01-19

A series of Zr:Fe:Cu:LiNbO3 crystals with distinct Zr4+ ion doping concentrations (0, 2, and 4 mol%) were grown using the Czochralski method. Subsequently, segregation coefficient doped ions in crystal was analyzed by an inductively coupled plasma-atomic emission spectrometer. The lattice constant defect structure measured X-ray powder diffraction. light-induced scattering threshold effect incident exposure energy flux same as change concentration. When concentration changes to mol%, close...

10.1080/10420150.2022.2116709 article EN Radiation effects and defects in solids 2022-12-28

10.1140/epjd/s10053-021-00302-5 article EN The European Physical Journal D 2021-11-01

Epitaxial lateral overgrowth (ELOG) is one of the effective means to improve crystal quality. In this work, gallium nitride (GaN) was grown using a hexagonal patterned graphene as mask via ELOG by metal organic chemical vapor deposition (MOCVD). Two kinds multi-layer were adopted on GaN/Sapphire compound substrate respectively, plasma enhanced (PECVD), another wet transferred (CVD) growth copper foil. We compared behavior epitaxial GaN and found that integrity homogeneity PECVD made...

10.1109/sslchinaifws57942.2023.10071045 article EN 2023-02-07
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