All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance

• DOI: 10.48550/arxiv.2311.13828
• Publication Date: 2023-01-01
• Authors: Jiacheng Shi; Víctor López‐Domí...; Sevdenur Arpaci; Vinod K. Sangwan; Farzad Mahfouzi; Jinwoong Kim; Jordan G. Athas; Mohammad Hamdi; Can Aygen; Charudatta Phatak; Mario Carpentieri; J. S. Jiang; M. Grayson; Nicholas Kioussis; Giovanni Finocchio; Mark C. Hersam; Pedram Khalili Amiri
• Keywords: Tunnel magnetoresistance; Tunnel junction; Magnetoresistive random-access memory

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, bit density. Realizing this potential requires AFM simultaneous electrical writing reading of information, which also compatible established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial tunnel junctions. However, these TMR structures were not grown using silicon-compatible deposition process, controlling their order required external magnetic fields. Here we show three-terminal junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited silicon. The simultaneously exhibit switching electric currents, by large room-temperature effect. First-principles calculations explain terms momentum-resolved spin-dependent conduction electrodes.