Gate Tunable Josephson Diode Effect in Josephson Junctions made from InAs Nanosheets

• DOI: 10.48550/arxiv.2501.15523
• Publication Date: 2025-01-26
• Authors: Shili Yan; Yi Luo; Haitian Su; Han Gao; Xingjun Wu; Dong Pan; Jianhua Zhao; Ji‐Yin Wang; H. Q. Xu
• Keywords: Condensed Matter - Mesoscale and Nanoscale Physics; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); FOS: Physical sciences

We report the observation of Josephson diode effect (JDE) in hybrid devices made from semiconductor InAs nanosheets and superconductor Al contacts. By applying an in-plane magnetic field ($B_{\mathrm{xy}}$), we detect non-reciprocal superconducting switching current as well retrapping current. The strength JDE depends on angle between bias ($I_{\mathrm{b}}$), reaching its maximum when $B_{\mathrm{xy}} \perp I_{\mathrm{b}}$ dropping to nearly zero $B_{\mathrm{xy}}\parallel I_{\mathrm{b}}$. Additionally, efficiency is tunable via electrostatic gate with a complete suppression at certain voltages. Our findings indicate that observed nanosheet-based junctions most likely arises Rashba spin-orbit interaction (SOI) nanosheets. Such gate-tunable material SOI useful not only for constructing advanced electronics but also detecting novel states.