A5077594820- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Laser Technologies
- Optical Network Technologies
- Solid State Laser Technologies
- Semiconductor Quantum Structures and Devices
- Advanced Photonic Communication Systems
- Laser-Matter Interactions and Applications
- Advanced Fiber Optic Sensors
- Laser Design and Applications
- Photorefractive and Nonlinear Optics
- Optical Coherence Tomography Applications
- Atomic and Molecular Physics
- Laser Material Processing Techniques
- Advanced Chemical Physics Studies
- Photonic Crystal and Fiber Optics
- Photonic Crystals and Applications
- Spectroscopy and Laser Applications
- Magneto-Optical Properties and Applications
- Neural Networks and Reservoir Computing
- Mass Spectrometry Techniques and Applications
- Analytical Chemistry and Sensors
- Advanced Frequency and Time Standards
- Advanced Optical Sensing Technologies
- Microwave Engineering and Waveguides
Eindhoven University of Technology
2015-2024
ASML (Netherlands)
2024
Laboratoire COBRA
2009
University of Strathclyde
1998-2007
Japan External Trade Organization
2002
Vrije Universiteit Amsterdam
1987-1997
Urenco (Germany)
1994
University of Amsterdam
1984
Photonic integrated circuits (PICs) are considered as the way to make photonic systems or subsystems cheap and ubiquitous. PICs still several orders of magnitude more expensive than their microelectronic counterparts, which has restricted application a few niche markets. Recently, novel approach in integration is emerging will reduce R&D prototyping costs throughput time by an order magnitude. It bring that integrate complex advanced functionality on single chip within reach for large number...
Optical frequency combs emerge as a promising technology that enables highly sensitive, near-real-time spectroscopy with high resolution. The currently available comb generators are mostly based on bulky and high-cost femtosecond lasers for dense generation (line spacing in the range of 100 MHz to 1 GHz). However, their integrated low-cost counterparts, which semiconductor mode-locked lasers, limited by large spacing, small number lines broad optical linewidth. In this study, we report...
Similarities and differences between photonic microelectronic integration technology are discussed a vision of the development InP-based in coming decade is given.
This paper describes the advantages that introduction of photonic integration technologies can bring to development photonic-enabled wireless communications systems operating in millimeter wave frequency range. We present two approaches for dual wavelength sources heterodyne-based generation realized using active/passive technology. One approach integrates monolithically distributed feedback semiconductor lasers along with optical amplifiers, combiners, electro-optic modulators and broad...
This paper provides a key solution for integrating spintronic memories with photonic integrated circuits, all-optical switching and reading of nanoscale magnetic bits. Problems associated nonlinear absorption the intrinsically weak magneto-optical effect are solved by hybrid scheme, exploiting plasmonic resonators. Thus authors have developed device concept that paves way toward ultrafast, energy-efficient advanced on-chip applications.
We report a novel type of monolithically integrated tunable semiconductor laser. The tuning is achieved by three intracavity Mach-Zehnder interferometers, realized in passive waveguides and using voltage-controlled electro-optic phase modulators requiring only four control voltages. potential the design demonstrated laser system that shows an optical linewidth 363 kHz, output power 3 mW, record range 74.3 nm. Such continuous wavelength span excess any monolithic reported up to date....
InP integrated photonics has become a critical enabler for modern telecommunications, and is poised to revolutionize data communications, precision metrology, spectrometry, imaging.The possibility integrate high-performance amplifiers, lasers, modulators, detectors in combination with interferometers within one chip enabling game-changing performance advances, energy savings, cost reductions.Generic integration accelerates progress through the separation of applications from common...
Mode-locked fiber and solid state lasers have played an essential role in several scientific technological developments. The integration of mode-locked on chips could enable their use a wide range applications. advancement semiconductor laser diodes has been going for decades, but recently seen the development novel devices based generic InP III-V-on-silicon photonic platforms. These platforms standardized components low-loss waveguides within cavity, allowing design advanced extended...
A compact low-loss 4×4 arrayed waveguide grating (AWG) demultiplexer with a channel spacing of 400 GHz is presented. By employing double-etch process, device made deeply etched waveguides that have bending radius down to 30 μm. This small and reduction the number array arms, reduces size only 230×330 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Measured insertion losses are less than 5 dB crosstalk below -12 dB. To our knowledge,...
The authors report lasing of InAs∕InGaAsP∕InP (100) quantum dots (QDs) wavelength tuned into the 1.55μm telecom region. Wavelength control InAs QDs in an InGaAsP∕InP waveguide is based on suppression As∕P exchange through ultrathin GaAs interlayers. narrow ridge-waveguide QD lasers operate continuous wave mode at room temperature ground state transition. low threshold current density 580A∕cm2 and transparency 6A∕cm2 per layer, measured pulsed mode, are accompanied by loss high gain with...
Wavelength-tunable InAs quantum dots (QDs) embedded in lattice-matched InGaAsP on InP(100) substrates are grown by metalorganic vapor-phase epitaxy (MOVPE). As/P exchange, which causes a QD size and an emission wavelength that very large, is suppressed decreasing the growth temperature V–III flow ratio. then reproducibly controlled thickness of ultrathin [0–2 monolayers (ML)] GaAs interlayers underneath QDs. Submonolayer coverages result shape transition from QDs to dashes for low It...
First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths around 1.55 mum is reported. Pulse generation 4.6 GHz from a 9 mm long device verified by background-free autocorrelation, RF-spectra and real-time oscilloscope traces. The output pulses are stretched time heavily up-chirped with value 20 ps/nm, contrary to what normally observed passively mode-locked semiconductor lasers. complete spectrum shown be coherent over 10 nm. From 7 Q-switching...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes function operating conditions were explored in spectral and time domain. A record bandwidth optical coherent comb from quantum well device 11.5 nm at 3 dB sub-picosecond pulse generation is demonstrated.
A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz in the form photonic integrated circuit is presented.The device realized using InP-based active-passive integration technology.The 33 mm long contains gain, saturable absorption, and passive waveguide sections as phase shifter to enable fine tuning spectral position lasing modes.Passive hybrid operation, along wavelength modes, are experimentally demonstrated.In mode-locking regime, beat signal...
A 37 element adaptive optic mirror has been used intracavity to control the oscillation mode profile of a diode-laser pumped Nd:YVO4 laser. Mode and power optimisation are demonstrated by closed loop automatic deformable mirror.
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition weakly coupled (<formula formulatype="inline"><tex Notation="TeX">${\approx}-24$</tex></formula> dB) cavity reduces current-induced shift <formula Notation="TeX">$d\nu/dI$</tex></formula> principal...
We report the generation of a 95 GHz carrier frequency by optical heterodyning two wavelengths from adjacent channels an arrayed waveguide grating-based multiwavelength laser. The extended cavity structure device provides low phase noise and narrow linewidth, further enhanced intracavity filter effect grating. demonstrate that generated RF beat note, at GHz, has -3 dB linewidth 250 kHz. To best our knowledge, this is narrowest free-running dual-wavelength semiconductor realized as photonic...
Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries are presented. In passive operation a 12 kHz -3dB linewidth of the fundamental RF tone at 4.7 GHz is obtained for geometry 16 geometry. Stabilization repetition rate these devices using hybrid mode-locking also demonstrated.
We present a widely tunable extended cavity ring laser operating at 2 μm that is monolithically integrated on an indium phosphide substrate.The photonic circuit designed and fabricated within multiproject wafer run using generic integration technology platform.The features intracavity tuning mechanism based nested asymmetric Mach-Zehnder interferometers with voltage controlled electro-refractive modulators.The operates in single-mode regime over the recorded wavelength range of 31 nm,...
Using an integrated colliding-pulse mode-locked semiconductor laser, we demonstrate the existence of nonlinear dynamics and chaos in photonic circuits (PICs) by demonstrating a period-doubling transition into chaos. Unlike their stand-alone counterparts, PICs are more stable over lifetime system, reproducible from batch to on faster time scales due small sizes PICs.
In this paper, we present the design and characterization of a monolithically integrated tunable laser for optical coherence tomography in medicine. This is first monolithic photonic circuit containing quantum-dot amplifiers, phase modulators, passive components. We demonstrate electro-optical tuning capabilities over 60 nm between 1685 1745 nm, which largest range demonstrated an arrayed waveguide grating controlled laser. Furthermore, it demonstrates that active-passive integration...
Europe is making significant investments in development of generic photonic foundry platform infrastructures for InP-based and Silicon Photonic ICs. Here we present the status JePPIX platform.
We demonstrate the broadband operation and beam calibration over 70nm tuning range of an optical phased array (OPA) fabricated in a generic InP photonic integration platform, which enables multi-wavelength OPA operation. The performance was demonstrated on 8-channel OPA, whose phase modulator characterization were executed through near-field far-field measurements. architecture reported here is scalable, results are promising for reducing complexity control large-scale OPAs their use at...
Abstract We present an integrated optical phased array (OPA) which embeds in-line amplifiers and phase modulators to provide beam-forming capability with gain beam steering in the 1465–1590 nm wavelength range. demonstrate up 21.5 dB net on-chip 35.5 mW output power. The OPA circuit is based on InP photonic integration platform features highest measured power level recorded active (i.e., amplification), best of our knowledge. Furthermore, enables independent control both amplitude its arms...
Strain-compensated double InGaAs quantum-well saturable Bragg reflectors (SBR's) with high damage thresholds have been developed for use as mode-locking elements in high-average-power neodymium lasers. Nd:YVO4 lasers these new SBR's, which produce transform-limited pulses of 21-ps duration at 90 MHz and an average power 20 W a diffraction-limited output beam. The peak pulse was 10.6 kW. A comparison the operating parameters strained single strain-compensated double-well SBR's indicates that...