A5060629973- Microstructure and Mechanical Properties of Steels
- Hydrogen embrittlement and corrosion behaviors in metals
- Additive Manufacturing Materials and Processes
- Advanced Materials Characterization Techniques
- Welding Techniques and Residual Stresses
- Photonic and Optical Devices
- Advancements in Photolithography Techniques
- Semiconductor Lasers and Optical Devices
- High Temperature Alloys and Creep
- Semiconductor Quantum Structures and Devices
- Advanced Welding Techniques Analysis
- Aluminum Alloys Composites Properties
- Metal Forming Simulation Techniques
- Aluminum Alloy Microstructure Properties
- Additive Manufacturing and 3D Printing Technologies
- Electron and X-Ray Spectroscopy Techniques
- VLSI and Analog Circuit Testing
- Industrial Vision Systems and Defect Detection
- Material Properties and Failure Mechanisms
- Integrated Circuits and Semiconductor Failure Analysis
- High Entropy Alloys Studies
- Non-Destructive Testing Techniques
- Engineering and Environmental Studies
- Metal and Thin Film Mechanics
- Titanium Alloys Microstructure and Properties
Institut des Matériaux Jean Rouxel
2017-2023
Nantes Université
2017-2023
Centre National de la Recherche Scientifique
2016-2022
Science et Ingénierie des Matériaux et Procédés
2014-2021
University of British Columbia
2016-2017
Université Grenoble Alpes
2016
Applied Materials (United States)
2009
CEA Grenoble
1996-2002
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
1996-2002
Centre Technique des Industries Mécaniques
2000
We report photomodulated reflectance results on vertical cavity surface emitting laser structures. Photoreflectance spectra have been recorded under normal incidence at different temperatures between 9 and 300 K. The structure used is a λ grown in the AlGaAs-based system wavelength near 800 nm. show that photoreflectance unique noninvasive tool to measure accurately quantum well transition mode alignment: both features can be distinguished very well. Furthermore, this technique offers...
For mature technologies, main yield detractor is random defectivity. Nevertheless, some devices present higher defectivity than rest of devices. Out process accident, design related defect one suspected root cause. Also, design-based type expected to increase as technology node decreases. Determining origin these additional systematic defects not easy are usually residual for technologies in production, always predictable by OPC simulator (ex: void active STI structure), and at least hidden...
In line defectivity monitoring needs to handle and process a huge amount of data in order control analyze the yield impacting defects an advanced CMOS (120, 90, 65 45 nm design rule). These need be processed detect classify different defect types, then impact on each type. Only fully integrated automated methodology can powerful enough provided by wafer inspection tools sample most critical finally cross-sectioned using focus ion beam (FIB). The purpose this paper is present methodology,...
For mature technology nodes, main yield detractor is random defectivity. Nevertheless, some devices can show higher defectivity than rest of devices. Out process accident, design related defect one suspected root cause. Also, design-based category expected to increase as node decreases. Determining origin these additional systematic defects not easy are usually residual for technologies in production, always predictable by OPC simulator (ex: void active STI structure), and at least hidden...
In the field of welding, assembly thick parts requires base metal to be chamfered, followed by multipass welding as additive manufacturing processes require layering deposits. both cases, process generates thermal, mechanical, and metallurgical phenomena resulting in formation residual strains stresses. Strains must limited, they can cause misalignments during leads geometrical defects. Residual stresses are especially problematic structural assemblies, add external applied part service,...
Timely detection and prevention of defect excursions is the primary goal any yield enhancement methodology in a wafer processing fab. Contamination killer defects are traditionally at focus such efforts. However, systematic process-induced increasingly impacting contemporary manufacturing environment, which characterized by rapid modifications, constantly decreasing design rules narrowing process windows. While treatment random remains important, emphasis on yield-limiting problems shifting...