A5056089821- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Silicon and Solar Cell Technologies
- GaN-based semiconductor devices and materials
- Silicon Nanostructures and Photoluminescence
- Semiconductor Quantum Structures and Devices
- Electromagnetic Compatibility and Noise Suppression
- Electrostatic Discharge in Electronics
- Silicon Carbide Semiconductor Technologies
- Advancements in PLL and VCO Technologies
- Acoustic Wave Resonator Technologies
New Mexico Institute of Mining and Technology
2022
American Solar (United States)
2022
University of Cambridge
1994-2021
University of Manchester
2021
Cardiff University
2021
Villanova University
2002-2003
Growing green and amber emitting InGaN/GaN quantum wells in the zincblende, rather than wurtzite, crystal phase has potential to improve efficiency. However, optimization of emission efficiency these heterostructures is still required compete with more conventional alternatives. Photoluminescence time decays were used assess how well width number affect recombination rates, temperature dependent photoluminescence was determine factors affecting The radiative lifetime found be approximately...
A SPICE model for the microwave and RF PIN switching diode is presented. The simulates important I-region charge storage phenomenon its effect on impedance-frequency characteristic. described validated by comparisons with numerical, analytical measured results.
Following extensive characterization and simulation of the behavior low-temperature laser recrystallized polysilicon thin-film transistors (TFT's), we propose a low field leakage current mechanism which explains to good degree accuracy at drain source voltage (V/sub DS/) dependence on device's active layer thickness, density-of-states (DOS), bias-stress degradation length.
We have observed and analyzed a new effect in the transient current measurement of polysilicon TFT's: presence an "overshoot" response, which implies time dependent gate capacitance exceeding C/sub ox/ WL. also performed two-dimensional (2-D) simulations to explain experimental results. Our analysis indicates that TFT circuit model based on lumped intranodal impedances cannot behavior. It follows "subtransistor" approach is essential for accurate dynamic simulations.
A time domain model for the microwave and RF PIN switching diode is presented. The suitable use in such simulators as SPICE simulates important I-region charge storage phenomenon its effect on behaviour active circuits switches, attenuators power limiters. For a SPST switch, variation impedance shown to affect insertion loss switch. limiters, spike leakage versus frequency different voltages also presented, showing reduction limiting with increasing given diode.
Since the performance of both analogue and digital circuits is heavily dependent on device output resistances, accurate simulation these requires that saturation regime characteristics be carefully modelled. However, deviations from gradual channel approximation, even at drain voltages below saturation, are observed in polysilicon thin-film transistors (TFTs). This paper investigates effects nonohmic conduction mechanisms characteristics, accounts for excess current through a simple physical...
The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A model for the FET presented used to predict on-state resistance, off-state capacitance switch cutoff frequency. effects gate bias circuit high power operation on resistance are also presented.
This paper describes the large-signal model of heterojunction field-effect transistors (HFET) based on Al/sub x/Ga/sub 1-x/N/GaN heterostructure used as control components for high-power microwave and RF devices (switches, attenuators, phase-shifters, etc.). Its use should extend power level FET-based microwave.
Gallium nitride-based HEMTs have been studied in a microwave and RF control application under high power levels. A theoretical model is presented showing an increase the resistance occurs at levels greater than +20 dBm due to operation near current saturation region. This phenomenon primarily field-dependent mobility two dimensional electron gas verified with on-wafer experimental data.
Polysilicon is by far the most attractive technology for flat panel displays with regard to reliability, compactness and low cost. However development of has been hampered lack reliable device circuit design tools. The goal providing polysilicon technologists designers same array tools as are currently available their sub-micron crystalline counterparts can only be achieved through combination extensive laboratory experiments physical two dimensional simulations. This work enables...