A5044034639- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Analytical Chemistry and Sensors
- Semiconductor materials and devices
- Advanced biosensing and bioanalysis techniques
- Mechanical and Optical Resonators
- Gas Sensing Nanomaterials and Sensors
- Graphene research and applications
- Biosensors and Analytical Detection
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Molecular Junctions and Nanostructures
- Neuroscience and Neural Engineering
- Force Microscopy Techniques and Applications
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Photonic and Optical Devices
- Carbon Nanotubes in Composites
- 3D Printing in Biomedical Research
- Advanced Sensor and Energy Harvesting Materials
- Electrochemical Analysis and Applications
- Advanced Biosensing Techniques and Applications
- Electrochemical sensors and biosensors
- Semiconductor Quantum Structures and Devices
- Nanopore and Nanochannel Transport Studies
Chungnam National University
2020-2025
Massachusetts Institute of Technology
2023
Kwangwoon University
2017-2020
University of Pennsylvania
2015-2017
Korea Advanced Institute of Science and Technology
2007-2016
Center for Integrated Smart Sensors
2014-2015
Kookmin University
2015
Samsung (South Korea)
2013
Intelligent Synthetic Biology Center
2010
Nanyang Technological University
1997-2005
A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel potential. Therefore, detection sensitivity enhanced use of G2. By applying weakly positive bias G2, sensing window significantly broadened compared case employing only, which is nominally used in conventional FET-based biosensors. charge arising from...
Early diagnosis of the highly pathogenic H5N1 avian influenza virus (AIV) is significant for preventing and controlling a global pandemic. However, there no existing electrical biosensor detecting biomarkers AIV in clinically relevant samples such as chicken serum. Herein, we report first use an aptamer-functionalized field-effect transistor (FET) label-free sensor detection A DNA aptamer employed sensitive selective receptor hemagglutinin (HA) protein, which biomarker AIVs. This immobilized...
A label-free biosensor based on a nanogap-embedded field-effect transistor is demonstrated. When biomolecules fill the molecular-sized nanogap, parameters are remarkably changed by gate dielectric constant. The detects specific binding between avian influenza antibody and an antigen with silica-binding protein.
An underlap channel-embedded FET is proposed for electrical, label-free biosensor in both watery and dry environments, current-voltage characteristics measured under each environment are compared. To investigate the effectiveness of device as a antigen-antibody binding an avian influenza (AI) used. Antibody AI on antigen-immobilized surface provides additional negative charge surface, they give rise to channel potential increasing result drain current reduction. In this study, we have...
A new sensing metric is proposed for a field-effect transistor (FET)-based biosensor. As proof of concept, nanogap-embedded FET studied to reduce data fluctuations that originate from process variations during fabrication and environmental stemming bioexperiments. The utilizes crucial gate voltage ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> @...
Monolayer materials are sensitive to their environment because all of the atoms at surface. We investigate how exposure affects electrical properties CVD-grown monolayer MoS2 by monitoring parameters field-effect transistors as is changed from atmosphere high vacuum. The mobility increases and contact resistance decreases simultaneously either pressure reduced or sample annealed in see a previously unobserved, non-monotonic change threshold voltage with decreasing pressure. This result could...
A highly sensitive and selective electrochemical sensor of dopamine (DA) has been developed by employing carboxylated carbonaceous spheres to modify glassy carbon electrodes (GCEs). Scanning electron microscopy (SEM) Fourier transform infrared (FT-IR) spectroscopy were used characterize as-prepared spheres. The results show that the diameter is uniformly 500 nm their surfaces mainly expose carboxyl groups with negative charges. Electrochemical measurements demonstrate greatly improve...
A silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H2) detection. The SiNW FETs are fabricated by top-down method functionalized palladium nanoparticles (PdNPs) through electron beam evaporation H2 drain current of the PdNP-decorated device reversibly responds to at different concentrations. allow individual addressing each sensor enhance sensitivity adjusting working region subthreshold regime. control...
A novel biomimicked neuromorphic sensor for an energy efficient and highly scalable electronic tongue (E-tongue) is demonstrated with a metal-oxide-semiconductor field-effect transistor (MOSFET). By mimicking biological gustatory neuron, the proposed E-tongue can simultaneously detect ion concentrations of chemicals on extended gate encode spike signals MOSFET, which acts as input neuron in spiking neural network (SNN). Such in-sensor functioning reduce area consumption conventional...
A junctionless transistor with a width of 10 nm and length 50 is demonstrated for the first time. silicon nanowire (SiNW) channel completely surrounded by gate, SiNW built onto bulk substrate. The proposed applied to Flash memory device composed oxide/nitride/oxide gate dielectrics. Acceptable characteristics are achieved regarding endurance, data retention, dc performance device. It can be expected that inherent advantages overcome scaling limitations in memory. Hence, strong candidate...
An underlap channel-embedded field-effect transistor (FET) is proposed for label-free biomolecule detection. Specifically, silica binding protein fused with avian influenza (AI) surface antigen and antibody (anti-AI) were designed as a receptor molecule target material, respectively. The drain current was significantly decreased after the of negatively charged anti-AI on channel. A set control experiments supports that only biomolecules channel effectively modulate current. With merits...
Label-free electrical detection of avian influenza (AI) is demonstrated for the development a point-of-care testing (POCT) platform. For new POCT platform, novel field effect transistor (FET)-based biosensor array was fabricated with conventional complementary metal-oxide-semiconductor (CMOS) technology. Nanogap-embedded separated double-gate FETs (nanogap-DGFETs) were realized in 6 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Self-heated silicon nanowire sensors for high-performance, ultralow-power hydrogen detection have been developed. A top-down nanofabrication method based on well-established semiconductor manufacturing technology was utilized to fabricate nanowires in wafer scale with high reproducibility and excellent compatibility electronic readout circuits. Decoration of palladium nanoparticles onto the enables sensitive selective gas at room temperature. Self-heating allows us enhance response recovery...
A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG FET allows the independent addressing gate voltage and hence improves sensing capability through an application asymmetric between two gates. One driving which controls current flow, other supporting amplifies shift threshold voltage, metric, arises from changes in pH. signal also amplified modulation oxide thickness.
Hollow CuO nanospheres have been prepared via a reduction reaction of copper ions on porous Si nanowires combined with calcination in air and uniformly anchored their surfaces. Scanning electron microscopy (SEM), transmission (TEM) X-ray photoelectron spectroscopy (XPS) were employed to characterize analyze as-synthesized samples. The results reveal that fabricated from heavily doped wafer are formed meso-porous structure by an Ag-assisted etching approach, Cu nanoparticles decorated the...
An electrical biosensor exploiting a nanostructured semiconductor is promising technology for the highly sensitive, label‐free detection of biomolecules via straightforward electronic signal. The facile and scalable production nanopatterned silicon by block copolymer (BCP) nanolithography reported. A cost‐effective large‐area nanofabrication, based on BCP self‐assembly single‐step dry etching, developed hexagonal nanohole patterning thin films. resultant channel modified with biotin...
We demonstrated novel methods for selective surface modification of silicon nanowire (SiNW) devices with catalytic metal nanoparticles by nanoscale Joule heating and local chemical reaction. The a SiNW generated localized heat along the produced endothermic reactions such as hydrothermal synthesis or thermal decomposition polymer thin films. In first method, palladium (Pd) could be selectively synthesized directly coated on reduction Pd precursor via SiNW. second sequential process composed...
A universal core model for multiple-gate field-effect transistors (Mug-FETs) is proposed. The proposed charge and drain current models are presented in Parts I II, respectively. It first demonstrated that an exact potential profile the entire channel not necessary derivation of accurate inversion-mode FETs. With application this new concept, a derived Mug-FETs by assuming arbitrary profile, which simplifies mathematical formulation. Thereafter, using Pao–Sah integral, obtained from Part I....