A5074101684- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Ferroelectric and Piezoelectric Materials
- Photorefractive and Nonlinear Optics
- Acoustic Wave Resonator Technologies
- Structural Health Monitoring Techniques
- Semiconductor materials and interfaces
- Vibration and Dynamic Analysis
- MXene and MAX Phase Materials
- Probabilistic and Robust Engineering Design
Shanghai Fudan Microelectronics (China)
2021-2025
Fudan University
2021-2025
State Key Laboratory of ASIC and System
2022
Tiangong University
2015
The ever-shrinking electrostatic capacitor, which is capable of storing substantial quantities electrical charge, has found widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices. Despite the high energy storage densities (133–152 J/cm3) efficiencies (75–90%) that have been realized using relaxor ferroelectric thick films, low-permittivity interfacial layers ultrathin films caused overall permittivity...
Multilevel resistance states with respect to the volume of reversed domains in ferroelectric tunneling junctions and erasable conducting domain walls an insulating matrix enable high-speed energy-efficient synapses, memories, transistors. According nucleation model, operation speeds these devices are assumedly limited by time while subsequent growth is neglected. Unfortunately, two times cannot be separated from experiment yet. Here, we observed independent switching behaviors at discrete...
A ferroelectric domain-wall memory has dual functionalities, where the volatile interfacial domain nearby electrode can function as an embedded selector in contrast to nonvolatile within inner cell for information storage. However, most of crossbar memories require independent adjustments onset voltage and coercive domains at same node fabrication technology. Here, we fabricated a LiNbO3 mesa-like device touch two top-to-top triangular-like Cu side electrodes. The readout wall current is...
Repetitive erasure/creation of conducting domain walls between two parallel/antiparallel domains at bipolar write voltages enables the high storage density a ferroelectric domain-wall memory. Generally, switching kinetics is described by Kolmogorov–Avrami–Ishibashi model on basis nucleation and growth without consideration distributive defect pinning energies. Here, mesa-like cells were etched from single-crystal LiNbO3 thin films bonded to SiO2/Si wafers, Pt metal contacts deposited their...
With the formation of mesa-like cells at their surfaces, LiNbO3 thin films are useful for integrating high-density domain wall memory. However, material is too hard and inert to etch with inclined side edges that help diminish polarization retention. Moreover, etching could damage ferroelectricity film. To overcome these drawbacks in forming memory directly, we developed a technique deposit two gapped electrodes film surface, without needing While applying an in-plane write voltage above...
Ferroelectric LiNbO3 single crystals have wide applications in surface acoustic wave filters, pyroelectric sensors, and electro-optic modulators. Large-area single-crystal thin films integrated on silicon are promising for high density integration of ferroelectric domain-wall resistance switching memories transistors. However, the short-time operation memory often suffers from poor polarization retention due to built-in imprint voltage. Here, we observed strong orientation-dependent effect...
The measurements of high-frequency dielectric displacement-electric field hysteresis loops show the continuous reduction apparent coercive upon lateral size shrinkage TiN/Hf0.5Zr0.5O2/TiN thin-film capacitors. Subsequent capacitor discharging current transients presence high resistance an interfacial layer between Hf0.5Zr0.5O2 (HZO) and TiN that increases significantly for a fast-operating memory. However, reduces almost linearly shrinkage, enabling from 4.7 to 1.6 mV/cm capacitors in sizes...
Generally the remanent polarization of pristine Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin films increases after wakeup performance at room temperature. However, improved has poor retention other temperatures. Here we studied its temperature dependence 450 K without invoking dielectric breakdown. This high-temperature treatment can symmetrize polarization-voltage...
One stochastic dynamical model of a thin rectangular plate subject to in-plate parametrical narrow band noise excitation is proposed based on elastic theory and Galerkin’s approach. At first the simplified applying multiple scale method averaged equation in Ito form obtained. Secondly, moment stability steady state responses are analyzed by Floquet method. Finally, second order system obtained, which can be used estimate variance responses. The numerical results agree with theatrical analysis.