A5021418479- Spectroscopy and Laser Applications
- Atmospheric chemistry and aerosols
- Nuclear Physics and Applications
- Atmospheric and Environmental Gas Dynamics
- Laser Design and Applications
- Atmospheric Ozone and Climate
- Radiation Detection and Scintillator Technologies
- Electron and X-Ray Spectroscopy Techniques
- Atmospheric aerosols and clouds
- Spectroscopy Techniques in Biomedical and Chemical Research
- Advanced Research in Science and Engineering
- Aeolian processes and effects
- Molecular Spectroscopy and Structure
- Statistical and numerical algorithms
- Combustion and flame dynamics
- Inertial Sensor and Navigation
- Advanced Chemical Physics Studies
- Laser-induced spectroscopy and plasma
- Atomic and Molecular Physics
- Fire effects on ecosystems
- Graphite, nuclear technology, radiation studies
- Gas Dynamics and Kinetic Theory
- Advanced Data Processing Techniques
- Solar and Space Plasma Dynamics
- Air Quality Monitoring and Forecasting
Joint Institute for Nuclear Research
2017-2023
Baltic State Technical University Voenmeh
2019
Ivanovo State Power University
2018
Central Economics and Mathematics Institute
2018
Prokhorov General Physics Institute
1987-2017
Vavilov Institute of General Genetics
1991-2012
Domel (Slovenia)
2012
Research and Production Association Typhoon
1993-2010
National Research Nuclear University MEPhI
1974-2008
Institute of Engineering Physics
1974-2007
A molecular dynamics model is used to understand the layer-by-layer etching of Si and SiO2 using fluorocarbon Ar+ ions. In these two-step etch processes, a nanometer-scale passivation layer grown on material’s surface low energy CFx+ ions or radicals. The top layers material are then reactive ion etched by utilizing already present surface. By repeating two steps, can be with precision rate considerably faster than what traditional atomic techniques provide. modeling results show that films...
A molecular dynamics model is used to investigate the interaction of energetic ions with fluorocarbon passivated Si, O, C, and H (SiOCH) based low-κ dielectrics. The includes a set interatomic potentials required for SiOCH–CFx system, where two- three-body pseudopotentials have either been obtained from published literature or computed using ab initio techniques. test structure ion simulations put together through deposition low energy SiOx+, CHy+, H+ on crystalline Si substrate. thin...
A molecular-dynamics-based model has been developed to understand etching of amorphous SiO2, with and without a fluorocarbon reactive layer, by energetic (CFx+) ions. The includes representation the solid set interatomic potentials required for SiO2–CFx interaction system. Two- three-body pseudopotentials have either obtained from published literature or computed using ab initio techniques. Stillinger–Weber potential construct is used represent in our particle trajectories are advanced...
Abstract Hydrogen Q‐branch rotational component line‐broadening coefficients for hydrogen–water collisions were determined at 2700 K. For linewidth measurements CARS spectroscopy with a Fabry–Perot interferometer and multichannel detector was applied. In order to perform these experiments, high‐pressure pulsed hydrogen–oxygen burner variable controlled pressure designed. Temperature inside the performed simultaneously help of broadband spectroscopy. Copyright © 2002 John Wiley & Sons, Ltd.
Ion interpenetration, stagnation, and energization processes are studied in colliding laser-produced plasma configurations relevant to Trident [R. G. Watt, Rev. Sci. Instrum. 64, 1770 (1993)] experiments using four different numerical methods: one-dimensional Monte Carlo Lagrangian multifluid codes, one- two-dimensional hybrid (particle ions, fluid electrons) single-fluid codes. Results from the methodologies compared for plasmas generated with gold deuterated polyethylene (CD2) targets....
Abstract By means of CARS interferometric line shape spectroscopy, the temperature dependences broadening coefficients for several Q ‐branch lines hydrogen molecules under collisions with water were determined in range 2100 < T 3500 K. Copyright © 2008 John Wiley & Sons, Ltd.
Neutron dark decays have been suggested as a solution to the discrepancy between bottle and beam experiments, providing matter candidate that can be searched for in halo nuclei. The free neutron final state following decay of $^6$He into $^4$He $+$ $n$ + $\chi$ provides an exceptionally clean detection signature when combined with high efficiency detector. Using high-intensity $^6$He$^+$ at GANIL, search coincident signal resulted upper limit on branching ratio Br$_\chi \leq...
Abstract We demonstrate the feasibility of a proposed new approach to CARS thermometry with simultaneous measurements intensities hydrogen Q‐branch lines and their linewidths during single laser shot by means spectrograph combined an interferometer having orthogonal directions dispersions. This allows correct temperature evaluation that takes into account directly measured linewidths. The experiments were carried out in H 2 :N = 1:10 mixture heated cell at 1050 K. values gas temperature,...
Abstract A high‐resolution spectroscopic method that allows single‐shot spectra of Raman‐active molecular transitions in non‐stationary media to be obtained with a resolution ∼0.1 cm −1 was developed. The is based on application Fabry–Pérot interferometer spectral analysis the CARS signal from Raman further detection an interference pattern by two‐dimensional photo‐matrix. implementation dual‐broadband (DBB) configuration for effective averaging over pump and Stokes laser together angular...
A molecular-dynamics-based model has been used to understand etching of SiO2, with and without a fluorocarbon-polymer layer, by energetic fluorocarbon (CFx+) ions. The test structures for computational experiments are prepared starting α-quartz ([001] orientation) bombarding it low-energy ions: Ar+ ion amorphous ions fluorocarbon-polymerized structures. CF+, CF2+, CF3+ range energies angles impact then bombarded on these characterize fluorocarbon-ion etching. Results show that aggregate Si O...