S. P. Beaumont

ORCID: 0000-0001-8517-2183
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Research Areas
  • Quantum and electron transport phenomena
  • Semiconductor Quantum Structures and Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Physics of Superconductivity and Magnetism
  • Semiconductor materials and devices
  • Radio Frequency Integrated Circuit Design
  • Advanced Sensor and Energy Harvesting Materials
  • Conducting polymers and applications
  • Magnetic properties of thin films
  • Analytical Chemistry and Sensors
  • Plasma Diagnostics and Applications
  • Molecular Junctions and Nanostructures
  • Microwave Engineering and Waveguides
  • Advancements in Photolithography Techniques
  • Quantum Information and Cryptography
  • Integrated Circuits and Semiconductor Failure Analysis
  • Surface and Thin Film Phenomena
  • Microfluidic and Capillary Electrophoresis Applications
  • Analog and Mixed-Signal Circuit Design
  • Nanowire Synthesis and Applications
  • Semiconductor Lasers and Optical Devices
  • GaN-based semiconductor devices and materials
  • Superconducting and THz Device Technology
  • Ion-surface interactions and analysis
  • Electronic and Structural Properties of Oxides

University of Alicante
2019-2023

Association of Research Libraries
2023

Shinshu University
2022

Universidad Politécnica de Cartagena
2017-2022

Universidad de Sevilla
2016

Education Scotland
2002-2006

University of Edinburgh
2003

University of Glasgow
1992-2002

BioElectronics (United States)
1998

University of Nottingham
1989-1997

We report, for the first time, ballistic magnetoresistance effects in a two-dimensional electron gas (2DEG) subjected to spatially modulated periodic magnetic field. The field is formed by presence of superconducting stripes on surface heterostructure with 2DEG. observe oscillatory due commensurability effect between classical cyclotron diameter and period modulation. behavior agreement existing theory no adjustable parameters.

10.1103/physrevlett.74.3009 article EN Physical Review Letters 1995-04-10

We have observed a series of sharp peaks in the low-temperature I(V) characteristics gated 1 \ensuremath{\mu}m\ifmmode\times\else\texttimes\fi{}1 \ensuremath{\mu}m GaAs/(AlGa)As resonant tunneling diode, which gate is used to reduce effective cross-sectional area from 0.7 0.1 \ensuremath{\mu}${\mathrm{m}}^{2}$. These peaks, occur at voltages well below calculated threshold, show weak dependence on temperature, magnetic field, and area. argue that this subthreshold structure due an...

10.1103/physrevlett.68.1754 article EN Physical Review Letters 1992-03-16

We have investigated the magnetoresistance of a two-dimensional electron gas subjected to periodic potential variable amplitude. The potential, period 300 nm, is generated with use gate deposited over layer patterned resist, and its amplitude controlled by voltage. At low voltages, two series oscillations in inverse magnetic field are observed. One series, at field, due other usual Shubnikov--de Haas oscillations. application small voltage generates an increase low-field oscillations,...

10.1103/physrevb.42.9229 article EN Physical review. B, Condensed matter 1990-11-15

A novel microelectronic "pill" has been developed for in situ studies of the gastro-intestinal tract, combining microsensors and integrated circuits with system-level integration technology. The measurement parameters include real-time remote recording temperature, pH, conductivity, dissolved oxygen. unit comprises an outer biocompatible capsule encasing four microsensors, a control chip, discrete component radio transmitter, two silver oxide cells (the latter providing operating time 40 h...

10.1109/tbme.2003.820370 article EN IEEE Transactions on Biomedical Engineering 2004-03-01

Raman scattering from arrays of GaAs quantum cylinders with radii down to 30 nm has been observed. The spectra show an enhanced TO phonon intensity due a change in the first-order selection rules. In addition, smallest exhibit extra spectral feature between and LO phonons. behaviour this additional peak as function geometry, cylinder size variation medium surrounding is consistent theoretical model surface phonons cylinder.

10.1088/0268-1242/5/4/001 article EN Semiconductor Science and Technology 1990-04-01

The fabrication and operation of a 1μm × gated GaAs/(AlGa)As resonant tunnelling diode is described. By biasing the gate I/V characteristic can be varied hence negative differential resistance controlled. Using wafer with an appropriate doping profile ensures that maximum depletion due to will occur close (AlGa)As tunnel barriers. When large bias applied extra structure develops in which may related modification sub-band well lateral quantum confinement electrons by gate. potential this...

10.1049/el:19910088 article EN Electronics Letters 1991-01-01

Platinum/palladium lines (17 nm wide) have been defined by the electron-beam exposure of a film poly(methyl methacrylate) 60 thick supported on 30-nm-thick carbon-film substrate followed liftoff overcoated metal. Line pitch may be reduced to 50 before fails. An 8-nm-diam 50-kV electron beam is used for exposure. A combination finite source diameter, molecular size effects, and secondary are believed responsible observed resolution limit. It shown that pattern-size accuracies few nanometers...

10.1063/1.92388 article EN Applied Physics Letters 1981-03-15

The electrochemical regeneration of real spent activated carbons (AC) used in drinking water treatment plants was studied at different reactor scales. carried out a 6 g filter-press cell and 3.5 kg batch reactor, allowing the scaling-up process between two electrolytic reactors. effect electrolyte, divided/undivided compartment configuration current density were cell. influence time scaled-up reactor. A 0.025 cm−2 electrodes Pt/Ti as anode stainless-steel cathode. ACs characterized by N2...

10.1016/j.chemosphere.2020.128399 article EN cc-by-nc-nd Chemosphere 2020-09-24

We have investigated the magnetoresistance of a heterostructure containing near surface two-dimensional electron gas subject to periodic magnetic field that alternates in sign. The is produced by an array submicrometer ferromagnets fabricated on heterostructure. observe giant low-field due electrons propagating open orbits along lines zero field. are able account for observed form and magnitude this semiclassical model.

10.1103/physrevb.55.r16037 article EN Physical review. B, Condensed matter 1997-06-15

This paper presents our work toward the integration of a multisensor microsystem with wireless communication, using system-on-chip (SoC) methodology. Four different forms microelectronic sensors have been fabricated on two separate 5/spl times/5 mm/sup 2/ silicon chips measuring pH, conductivity, dissolved oxygen concentration, and temperature. The are integrated sensor fusion chip comprising analog circuitry for operation signal amplification prior to digital decoding transmission....

10.1109/jsen.2002.807491 article EN IEEE Sensors Journal 2002-12-01

A new type of nonlocal oscillatory magnetoresistance effect is observed in heavily doped ${\mathit{n}}^{+}$-GaAs wires over a limited range temperature (10\ensuremath{\le}T\ensuremath{\le}50 K) and at magnetic fields sufficiently large to give rise Landau quantization. The when quantum ballistic transport along the edges coexists with diffusive dissipative conduction bulk.

10.1103/physrevlett.67.3014 article EN Physical Review Letters 1991-11-18

We have measured the thermopower of small ${\mathit{n}}^{+}$-GaAs wires using a novel electron heating technique. The results show very large fluctuations which are in good agreement with existing theories. believe this to be first observation universal fluctuations.

10.1103/physrevlett.64.2058 article EN Physical Review Letters 1990-04-23

We investigate a new type of magnetoresistance (MR) in which the resistivity near-surface two-dimensional electron gas is controlled by magnetization submicron ferromagnetic grating defined on surface device. observe an increase resistance up to ∼1500% at temperature 4 K and ∼1% 300 K. The magnitude dependence MR are well accounted for semiclassical theory. Optimization device parameters expected considerably room MR.

10.1063/1.121164 article EN Applied Physics Letters 1998-04-06

A comprehensive RF analysis technique based on ensemble Monte Carlo (EMC) simulation of compound FET's with realistic device geometry is presented. Y-parameters are obtained through Fourier transformation the EMC transients in response to small changes terminal voltages. The currents statistically enhanced and filtered allow for reliable y-parameters extraction. Improved analytic procedure extracting intrinsic small-signal circuit components described. As a result, stable can he extracted...

10.1109/16.704358 article EN IEEE Transactions on Electron Devices 1998-01-01

Dry etching using ions can cause damage to the underlying semiconductor. This paper discusses in III–V semiconductors and presents examples of conditions under which it be effectively eliminated. A distinction between surface sidewall is made methods measuring both parameters are reviewed. It noted that noble gases relatively deep damage, while correct circumstances, etchants have a marked chemical effect much less damage. The present state understanding mechanisms for discussed.

10.1116/1.588745 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1996-11-01

We report the results of capacitance measurements on quantum wires in which only lowest one-dimensional subband is occupied. The are generated metal-insulator-semiconductor-field-effect-transistor-type AlAs/GaAs heterojunctions with an interdigitated gate. In such devices strong lateral confinement and a well-defined threshold voltage achieved. limit at very low electron density signal recorded as function gate exhibits substructure that we discuss view drastic change effective channel width...

10.1103/physrevb.49.14074 article EN Physical review. B, Condensed matter 1994-05-15

The high-frequency polarizability of quantum wires in a novel metal-insulator-semiconductor field-effect transistor heterojunction is studied the far-infrared regime. Whereas on conventional narrow only fundamental mode dimensional resonance observed, investigated here exhibit higher harmonics. Additionally, at high electron densities and intermediate magnetic fields we observe completely unexpected splitting mode. behavior discussed view nonparabolic confinement as well interwire interaction.

10.1103/physrevb.46.12849 article EN Physical review. B, Condensed matter 1992-11-15

We have studied universal conductance fluctuations in the nonlocal magnetoresistance of ${\mathit{n}}^{+}$-GaAs wires. The Lee-Stone correlation field \ensuremath{\Delta}${\mathit{B}}_{\mathit{c}}$ increases by a factor 5 as magnetic from 0 to 12 T but amplitude does not change. It is possible explain increase quantitatively terms variation size phase coherence length. However, this should also give rise large change fluctuation amplitude, which observed. This implies that scaling valid high fields.

10.1103/physrevlett.69.1248 article EN Physical Review Letters 1992-08-24

We have measured the magnetoresistance at various temperatures of a two-dimensional electron gas subjected to one-dimensional periodic potential. A series oscillations in inverse magnetic field is observed low fields due resonant drift electrons potential, while higher Shubnikov--de Haas (SdH) are observed. The low-field persist much temperature than SdH oscillations. argue that quenched when thermal smearing cyclotron orbit diameter equal period Using this simple model, we show which larger...

10.1103/physrevb.42.9689 article EN Physical review. B, Condensed matter 1990-11-15

Abstract A non-conventional, bioinspired device based on polypyrrole coated electrospun fibrous microstructures, which simultaneously works as artificial muscle and mechanical sensor is reported. Fibrous morphology preferred due to its high active surface can improve the actuation/sensing properties, preparation still being challenging. Thus, a simple fabrication algorithm electrospinning, sputtering deposition electrochemical polymerization produced electroactive aligned ribbon meshes with...

10.1038/s41598-022-18955-6 article EN cc-by Scientific Reports 2022-09-02

We have measured the magnetoresistance of a two-dimensional electron gas subjected to one-dimensional periodic potential using structures with periods 150, 300, and 500 nm. In all we observe low-field positive magnetotresistance, which extends up critical field at new form magnetic breakdown occurs. This is found be inversely proportional period potential, in agreement model based on semiclassical dynamics electrons. addition, developed quantum-mechanical formulation this problem streaming,...

10.1103/physrevb.43.9980 article EN Physical review. B, Condensed matter 1991-04-15

Conducting wires of widths down to 0.1 μm have been fabricated in modulation-doped GaAs/AlGaAs material using SiCl4 reactive ion etching with a negative resist mask. The used was high-resolution (HNR) and its applicability microstructure fabrication is discussed. A novel dry etch for GaAs, CH4/H2 etching, produces low damage shows much promise wire fabrication.

10.1116/1.584028 article EN Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena 1988-01-01
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