A5058064940- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Textile materials and evaluations
- Structural Analysis and Optimization
- Acoustic Wave Resonator Technologies
- Advanced Photocatalysis Techniques
- Graphene and Nanomaterials Applications
- Rice Cultivation and Yield Improvement
- Photocathodes and Microchannel Plates
- Boron and Carbon Nanomaterials Research
- Wastewater Treatment and Reuse
- Gas Sensing Nanomaterials and Sensors
- Material Properties and Processing
- Diamond and Carbon-based Materials Research
- Graphene research and applications
- Antenna Design and Optimization
- Semiconductor Quantum Structures and Devices
- Advanced Antenna and Metasurface Technologies
- Electrospun Nanofibers in Biomedical Applications
- Wastewater Treatment and Nitrogen Removal
Tamil Nadu Dr. M.G.R. Medical University
2025
University of Warwick
2024
National Central University
2019-2023
Hindustan Institute of Technology and Science
2017-2021
Anna University, Chennai
2012-2018
Indian Institute of Technology Delhi
2010
Background: Curcumin, one of the main compounds turmeric (Curcuma longa), has been extensively studied for its several bioactivities, notably antibacterial and antiinflammatory properties. However, limited bioavailability curcumin restricts anti-inflammatory effectiveness. Thus, research on design synthesis new derivatives is being pursued to enhance efficacy. Aim: Our study aims modify 1, 3-dicarbonyl moiety improve permanence as an mediator. Methods: Curcumin analogs (C1-C9) were...
Among III-nitride semiconductors, hexagonal boron nitride (h-BN) has a two-dimensional crystal structure and can be used as an insulator for nanotransistors or substrate release layer flexible electronics, which heavily rely on its interface properties. In this study, h-BN films were successfully grown 150 mm Si(111) substrates by metal–organic chemical vapor deposition using AlN nucleation layer, van der Waals epitaxy of GaN the was investigated, including challenges exfoliation epilayers....
Controlled nucleation and growth of Zinc oxide nanorods is achieved on GaN, etched GaN AlGaN/GaN heterostructure bottom layers grown by a metal organic chemical vapour deposition technique. The effects the crystalline structural, morphological optical properties as ZnO have been investigated high-resolution X-ray diffraction, scanning electron microscopy, photoluminescence Raman measurements. HRXRD (0002) reciprocal-space mapping (RSMs) studies were performed before after nanostructures to...
Group III-nitride alloys are believed to be promising photoelectrodes for photoelectrochemical water splitting get hydrogen fuel. Here, we grew the InGaN nanowires (NWs) on silicon (111) as a photoanode using low-cost chemical vapor deposition method. The photocurrent of an NWs' is five times greater than that GaN photoanode. maximum density 8 mA/cm2 at 0.5 V vs reverse electrode with applied bias photon-to-current efficiency 5.8% was observed in In30Ga70N NWs/Si heterostructure. incident...
The compact spinning systems are mostly used for of combed yarns. However, many attempts have been made to use the system carded Recently SUESSEN has introduced D–Type slot producing yarn. In this research work, an attempt analyze migration properties Three different twist factors selected and compared with regular yarn ring parameters such as Mean Fiber Position, Root Squared (RMS) Deviation, Migration Intensity Yarn Diameter measured using Charge-Coupled Device (CCD) camera attached on a...
The large bandgap and high p-type conductivity of sp2-bonded boron nitride (BN) make the compound very attractive for deep ultraviolet light-emitting diodes (DUV LEDs). However, integrating promising sp2 material in DUV LED structure is challenging. This because reported growth conditions scalable high-quality BN, including substrate temperature (>1300 °C) low-temperature (<1000 buffer, can degrade underneath Al-rich AlGaN quantum wells. Here, we demonstrate a wafer-scale rhombohedral BN...
Scalable graphene was grown on commercially purchased Cu foil by using the chemical vapor deposition method with a growth temperature and time of 900 °C 30 min, respectively. The mechanism investigated in different reactive environment (gas flow). crystallinity surface absorbed species identified through x-ray diffraction analysis. structural morphology determined high-resolution transmission electron microscopy, scanning optical microscopy. Raman spectroscopy revealed formation defects...
The range of applications the common III-nitride semiconductors (Al, Ga, In)N can be extended through bandgap engineering with inclusion boron and forming their heterojunctions. In this study, band alignments B(Al, Ga)N alloys III-nitrides are investigated using x-ray photoemission spectroscopy. A type-I straddling-gap alignment is identified for a B0.06Ga0.94N/AlN heterojunction valence offset (VBO) conduction (CBO) 1.1 ± 0.2 1.8 eV, respectively, whereas type-II observed on...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation K. Prabakaran, R. Ramesh, M. Jayasakthi, Loganathan, P. Arivazhagan, Baskar; Growth characterization of InXGa1-XN/GaN single quantum well prepared by MOCVD. AIP Conference Proceedings 24 June 2015; 1665 (1): 120024. https://doi.org/10.1063/1.4918131 Download citation file: Ris (Zotero) Reference Manager EasyBib...