A5087154926- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Vehicle emissions and performance
- Air Quality and Health Impacts
- Silicon Carbide Semiconductor Technologies
- Ion-surface interactions and analysis
- MXene and MAX Phase Materials
- Semiconductor materials and interfaces
- Advanced Semiconductor Detectors and Materials
- Air Quality Monitoring and Forecasting
- Electronic and Structural Properties of Oxides
- Metal and Thin Film Mechanics
- Perovskite Materials and Applications
Kyungpook National University
2024
National Yang Ming Chiao Tung University
2018-2023
In this letter, 5 nm-thick HZO ultra-thin ferroelectric capacitors with excellent remanent polarization (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> ) and reliability are presented. The TiN/HZO/TiN metal-ferroelectric-metal (MFM) capacitor stack was deposited consecutively in the same atomic layer deposition (ALD) system without breaking vacuum (i.e. "in-situ" like) to improve interface quality between TiN electrodes layer. samples...
In this article, sub-10 nm top width nanowire <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As gate-all-around (GAA) MOSFETs with improved subthreshold characteristics and reliability are demonstrated. These devices exhibit a significant improvement in the performances swing (SS) of 70 mV/dec, drain induced barrier lowering (DIBL) 46 mV/V, off-current ( <inline-formula...
An inversion-mode In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As FinFET exhibiting a transition frequency (fT) of 271 GHz and maximum oscillation (f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) 78 at V xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> = 0.5 is reported in this work. Simultaneously, the transconductance (gm) 2056 (μS/μm) drain induced barrier...
In this article, InGaAs FinFETs using (010) orientation channel and nitrogen post remote plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance, <inline-formula> <tex-math notation="LaTeX">${g}_{m}$ </tex-math></inline-formula>, of 2727 notation="LaTeX">$\mu \text{S}/\mu \text{m}$ </tex-math></inline-formula> which is among the highest values reported for In<sub>0.53</sub>Ga<sub>0.47</sub>As FinFETs. addition, subthreshold performances are improved with...
In this article, we investigate the electrical properties of <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As gate-all-around (GAA) MOSFETs with different nanowire shapes. InGaAs GAA trapezoid and triangle shapes have been fabricated characterized. Improved output performance was observed as top width reduces from 20 to 11 nm. It found that characteristics degraded decreased...
This work demonstrates the high-frequency characteristics of In0.53Ga0.47As nanowire with scaled wire width by implementing TCAD simulations. The physical models and correlated parameters have been calibrated to experiments in literature 19. As is 10 nm, electron density peaks are no longer located close oxide/semiconductor interface. Instead, merge volume inversion effects appear due strong quantum confinement. lead higher cut-off frequency reduced total transport delay time. To a better...
In this work, we demonstrated considerable enhancement of the transport characteristics n-type Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with assistance in situ NH3/N2 remote-plasma (RP) treatment. According to measurement and simulation results, RP treated sample shows superior device performances as compared control without plasma treatment including (a) improved on-current (Ion) from 8.5 mA/mm 17 mA/mm, (b) transconductance (Gm) 16.05 mS/mm 28.52...
Abstract In this work, we present an inversion-mode 0.53 Ga 0.47 As planar MOSFETs with current gain cutoff frequency ( f T ) = 275 GHz and maximum oscillation max 75 GHz. To the best of our knowledge, is highest value among all reported InGaAs MOSFETs. Meanwhile, peak transconductance g m shows 1035 μ S/ m). These extraordinary properties are attributed to N 2 remote plasma treatment which results in excellent high- k /III-V interface quality. With assistance delay-time analysis, effective...
Raising transistors density led by scaling is responsible for the increase of power consumption. Consequently, supply voltage a strong issue in recent years. Tunnel diode considered as one potential candidate low applications. In this respect, broken-gap InAs/GaSb heterostructure which has narrow bandgap and small effective mass that interband tunneling probability to use fabricate core-shell nanowires tunnel application. Peak valley current ratio (PVCR) negative differential resistance...
In this paper, we have fabricated an 0.53 Ga 0.47 As gate-all-around field-effect-transistor (GAAFET) used N 2 remote-plasma passivated. Transistors with Nitrogen passivated effectively suppressed short channel effect compared the controlling sample. We not only but also 9 nm top width and near vertical sidewall of GAA structure to enhance gate controllability efficiency. our results, subthreshold swing (SS) decreases from 81 66 mV/dec, drain induced barrier lowing (DIBL) reduces 100 42...
In this work, we demonstrate a high- k /III-V gate stack interface treatment utilizing NH 3 /N 2 in-situ remote plasma (RP). Through such treatment, the density of trap states (D it ) is dramatically reduced and surface morphology Al O modified. Aside from sharp decline in D , layer becomes smoother thus results significant enhancement roughness mobility combining observations experiment as well simulation results. From Atomic Force Microscope (AFM) observe an improvement 0.332 nm to 0.252...
Integration of InGaAs/InAs nanowire on silicon (Si) substrate has been attracting huge attention for opto- and micro-electronics applications. In this work we report selective area epitaxy (SAE) heterostructure (HS) Si (111) using metal organic chemical vapor deposition (MOCVD). High quality InAs wurtzite (WZ) segment is grown axially InGaAs NW when the arsine (AsH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) supply low. The growth...