Amanda N. Lemire

ORCID: 0000-0002-0251-1811
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About
Contact & Profiles
Research Areas
  • Photonic and Optical Devices
  • solar cell performance optimization
  • Semiconductor Lasers and Optical Devices
  • Thermal Radiation and Cooling Technologies
  • Semiconductor materials and interfaces
  • Photonic Crystals and Applications
  • Advanced Thermodynamics and Statistical Mechanics
  • Nanowire Synthesis and Applications

Tufts University
2022-2024

Thermophotovoltaic (TPV) devices generate electric power from heat by using thermal emitters and photovoltaic effects. The radiation spectrum of the impacts output efficiency TPV device. Thus, sustainable require that are thermally robust have optimized for targeted wavelengths. Metals, due to their refractory optical properties, commonly used make with wavelength-selective radiation. This work reviews physical chemical properties 15 metals provides criteria determining materials emitters.

10.1103/physrevmaterials.6.110201 article EN publisher-specific-oa Physical Review Materials 2022-11-07

We report on changes in Ge1−xSnx films (0.065 ≤ x 0.144) after short high-temperature anneals. Films were grown by molecular beam epitaxy (001) Ge wafers, rapidly annealed, and characterized x-ray diffraction, Raman spectroscopy, optical microscopy. Sn segregated to the surface a maximum temperature is inversely related content. Lower content showed little no improvement crystal quality below segregation temperatures, while higher partially relaxed demonstrated improved uniformity for...

10.1116/6.0002680 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2023-07-10

The bandgap of germaniumtin alloys extends from 0.8 e V into the metallic as Sn composition increases, which overlaps strongly absorbing range dominant 111- systems used for thermophotovoltaic (TPV) power collection and narrow diodes in multijunction PV cells. Si Ge wafers are more physically resilient than III - material abundance is higher indium-containing also available larger formats, with a broader array processing technologies. In fully relaxed GeSn films greater 6% Sn, transitions to...

10.1109/pvsc48320.2023.10359907 article EN 2023-06-11
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