Zhiying Chen

ORCID: 0000-0002-0275-0003
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Thin-Film Transistor Technologies
  • Plasma Diagnostics and Applications
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Advancements in Battery Materials
  • Dust and Plasma Wave Phenomena
  • Neurological Disease Mechanisms and Treatments
  • Transition Metal Oxide Nanomaterials
  • Metal and Thin Film Mechanics
  • Graphene research and applications
  • Electrohydrodynamics and Fluid Dynamics
  • Smart Grid and Power Systems
  • Power System Optimization and Stability
  • 2D Materials and Applications
  • Optimal Power Flow Distribution
  • Electrocatalysts for Energy Conversion
  • Catalytic Processes in Materials Science
  • Advanced battery technologies research
  • Metal-Organic Frameworks: Synthesis and Applications
  • Neuroinflammation and Neurodegeneration Mechanisms
  • Advanced Sensor and Control Systems
  • Nanowire Synthesis and Applications
  • Wireless Power Transfer Systems
  • Advanced Battery Materials and Technologies
  • Power System Reliability and Maintenance

Shenzhen University
2021-2025

Institute of Microelectronics
2025

University of Hong Kong
2025

Jiujiang University
2021-2024

Beijing Institute of Technology
2024

Yunnan University
2022-2024

Henan Normal University
2023-2024

South China University of Technology
2020-2023

Nanyang Technological University
2023

Fuzhou University
2005-2023

High-performance thin-film transistors (TFTs) are crucial for advanced displays. The use of metal oxide (MO) as an excellent semiconductor to achieve high-mobility TFTs comes with certain challenges, such a severely negative threshold voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{th}}$</tex-math> </inline-formula> ) and instability....

10.1109/ted.2025.3525613 article EN IEEE Transactions on Electron Devices 2025-01-01

With an increase in global aging, the number of people affected by cerebrovascular diseases is also increasing, and incidence vascular dementia-closely related to risk-is increasing at epidemic rate. However, few therapeutic options exist that can markedly improve cognitive impairment prognosis dementia patients. Similarly Alzheimer's disease other neurological disorders, synaptic dysfunction recognized as main reason for decline. Nitric oxide one ubiquitous gaseous cellular messengers...

10.4103/nrr.nrr-d-23-01353 article EN cc-by-nc-sa Neural Regeneration Research 2024-01-31

10.1016/j.jcis.2011.02.062 article EN Journal of Colloid and Interface Science 2011-03-07

Measurements of electron temperatures (Te) and energy distribution functions (EEDFs) in a dual frequency capacitively coupled etcher were performed by using trace rare gas optical emission spectroscopy (TRG-OES). The parallel plate was powered high (60 MHz) “source” top electrode low (13.56 “substrate” bottom electrode. Te first increased with pressure up to ∼20 mTorr then decreased at higher pressures. Increasing the rf power resulted temperatures. Electron 90% CF4+10% O2 plasmas similar...

10.1116/1.3179162 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2009-07-31

Abstract ChemInform is a weekly Abstracting Service, delivering concise information at glance that was extracted from about 200 leading journals. To access Abstract, please click on HTML or PDF.

10.1002/chin.200612279 article EN ChemInform 2006-03-03

Abstract In recent years, researchers have explored the interlayer stacking structure of bilayer (BL) transition metal dichalcogenides (TMDCs) and found that it has unique impact on electrical, optical, vibrational properties TMDCs. Unfortunately, size BL TMDCs synthesized by pre-existing methods is not large. addition, there any effective mean to control number layers as well stack structure. This major limiting factor for further exploration We report a new method rapid controllable growth...

10.1088/2053-1583/ac395f article EN 2D Materials 2021-11-12

In this letter, the reliability of InSnZnO thin-film transistors (TFTs) under hot carrier (HC) stress is systematically studied. HC degradation accompanied by recovery observed for first time in TFTs. The acceptor-like trap state generation and electron trapping into gate insulator (GI) jointly degenerate device, detrapping from GI hole injection recover device meanwhile. self-weakening effect with vertical electric field enhancement trigger domination effect.

10.1109/led.2023.3277823 article EN IEEE Electron Device Letters 2023-05-18

Abstract Thin‐film transistors (TFTs) in practical operations are inevitably impacted by moisture and temperature. An investigation on the joint effect of environmental working temperature device characteristics instability is becoming necessary. However, few related studies have been performed. In this work, a low‐temperature (LT) annealing air proposed to simulate conditions TFTs display applications. The exchange caused LT InSnZnO (ITZO) systematically investigated. Combined with X‐ray...

10.1002/admi.202102584 article EN Advanced Materials Interfaces 2022-03-27
Coming Soon ...