A5063217859- Photonic and Optical Devices
- Plasmonic and Surface Plasmon Research
- Advanced Photonic Communication Systems
- Photonic Crystals and Applications
- Advanced Fiber Laser Technologies
- Terahertz technology and applications
- Optical Network Technologies
- Semiconductor Quantum Structures and Devices
- Integrated Circuits and Semiconductor Failure Analysis
Wuhan National Laboratory for Optoelectronics
2019-2024
Huazhong University of Science and Technology
2019-2024
Abstract Graphene-based photodetectors have attracted significant attention for high-speed optical communication due to their large bandwidth, compact footprint, and compatibility with silicon-based photonics platform. Large-bandwidth coherent receivers are crucial elements large-capacity networks advanced modulation formats. Here, we propose experimentally demonstrate an integrated receiver based on a 90-degree hybrid graphene-on-plasmonic slot waveguide photodetectors, featuring footprint...
Abstract Polarization multiplexing technology is widely adopted for increasing the capacity in optical communication systems. Especially, silicon‐based integrated polarization division (PDM) receivers with large bandwidth therein play an important role, which are crucial on‐chip large‐capacity interconnection. Here, a PDM receiving chip enabled by two‐dimensional grating couplers and graphene‐on‐plasmonic slot waveguide photodetectors. Utilizing advantages of designed focusing...
High-power silicon-based photodiodes are key components in many silicon photonics systems, such as microwave an optical interconnection system with multi-level modulation formats, etc. Usually, the saturation power of silicon-germanium (Si-Ge) photodiode is limited by space-charge screening (SCS) effect and feasibility fabrication process. Here, we propose a high Si-Ge assisted doping regulation. Through alleviating SCS photodiode, successfully demonstrate 85.7% improvement on 57% -1 dB...
Photo-mixing with its advantages of ultra-large bandwidth and precise tunability has emerged as an important technique for terahertz (THz) wave generation. Recently, graphene photodetectors exhibiting a large are expected to further boost the development integrated THz emitters. Here, we fabricate sub-THz emitter based on large-bandwidth silicon–plasmonic (SPG) photodetector broadband rounded bow-tie antenna. The SPG is experimentally demonstrated emit waves radiation spectrum from 50 300...
The sub-THz inter-chip interconnections are first demonstrated with terahertz photomixers based on standard-process fabricated germanium-silicon photodetectors and bow-tie antennas, featuring a frequency range over 200 GHz.
We report a waveguide Si-Ge avalanche photodiode using zero-change foundry processing. A 182 GHz gain-bandwidth product with responsivity of 11.2 A/W at 1550 nm is experimentally demonstrated through hole-generated impact ionization.
We propose and theoretically demonstrate a high-speed high-power silicon-germanium photodiode assisted by doping region regulation. The simulations imply large 3 dB bandwidth of 14 GHz at 30 mW input optical power.
<p indent=0mm>Integrated silicon-based plasmonic photodetectors have attracted more and attention recently, due to their potential applications in THz bandwidth. In this paper, by utilizing a simplified two-step lithography process, the photoconductive detector is fabricated with core structure of slot waveguide two symmetric metallic slabs as microwave electrodes integrate mechanically exfoliated graphene. The 3-dB bandwidth graphene-on-plasmonic photodetector exceeded <sc>120 GHz</sc>...
We report high-data rate reception of polarization division multiplexing signals using graphene-on-plasmonic slot waveguide photodetectors with bandwidth exceeding 70 GHz. 128 Gbps NRZ and 224 PAM-4 are experimentally demonstrated at 1550 nm high quality.