A5038070823- CCD and CMOS Imaging Sensors
- Image Processing Techniques and Applications
- Infrared Target Detection Methodologies
- Neuroscience and Neural Engineering
- Analytical Chemistry and Sensors
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Advanced Optical Sensing Technologies
- Thin-Film Transistor Technologies
- Molecular Junctions and Nanostructures
- Advanced biosensing and bioanalysis techniques
- Microfluidic and Capillary Electrophoresis Applications
- Gas Sensing Nanomaterials and Sensors
- Advanced Fluorescence Microscopy Techniques
- Analog and Mixed-Signal Circuit Design
- Advanced MEMS and NEMS Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Acoustic Wave Resonator Technologies
- Transition Metal Oxide Nanomaterials
- Advanced Sensor and Energy Harvesting Materials
- Visual Attention and Saliency Detection
- Visual perception and processing mechanisms
- Organic Electronics and Photovoltaics
- Digital Holography and Microscopy
- Microfluidic and Bio-sensing Technologies
Korea University
2024-2025
Kyungpook National University
2012-2023
Electronics and Telecommunications Research Institute
2005
Toyohashi University of Technology
1998-2002
LG (United States)
2001
Abstract Native tissues exhibit hierarchical structures of anisotropically arranged extracellular matrix that dynamically regulate stem cells and tissue function. However, neither multiscale nano‐anisotropy nor dynamic anisotropy control have been reported. In this study, spherical or rod‐shaped gold small‐nanomaterials (at integrin receptor‐scale; tens nanometers) are coupled to the surface magnetic large‐nanomaterials focal adhesion complex‐scale; hundreds nanometers), with both showing...
This paper presents a power-saving readout scheme for CMOS image sensors (CISs) that utilizes the properties. The proposed delta-readout (A-readout) reads signal difference between two pixels located next to each other (Apixel) by utilizing most significant bits (MSBs) information of previous pixel. By effectively reducing dynamic range signal, compensated A-window checking, A-readout can reduce effective number decision cycles in successive-approximation register (SAR) analog-to-digital...
Abstract In this study, a field effect transistor (FET)‐type biosensor based on 0.5 μm standard complementary metal oxide semiconductor (CMOS) technology is proposed and its feasibility for detecting deoxyribonucleic acid (DNA) protein molecules investigated. Au, which has chemical affinity with thiol by forming self‐assembled monolayer (SAM), was used as the gate in order to immobilize DNA molecules. A Pt pseudo‐reference electrode employed detection of biomolecules. The sensor fabricated...
A new pixel structure is proposed for wide dynamic range CMOS image sensors. based on a three-transistor active sensor has two linear responses and logarithmic response using additional circuits. The photogate surrounding the n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> /p-sub photodiode exists second response. due to biased MOS cascode. was designed fabricated 0.35-μm 2-poly 4-metal standard process. of higher than 106 dB. test...
We have fabricated field effect transistor (FET)-type biomolecular sensor for the detection of deoxyribonucleic acid (DNA) sequence based on 0.5 µm standard complementary metal oxide semiconductor (CMOS) technology and investigated its electrical characteristics. A Pt reference electrode with improved performance was employed DNA Au, which has a chemical affinity thiol by forming self-assembled monolayer (SAM), used as gate in order to immobilize DNA. It p-channel (PMOS) FET-type because...
We have fabricated an field effect transistor (FET)-type deoxyribonucleic acid (DNA) charge sensor which can detect the DNA sequence by sensing variation of drain current due to hybridization and investigated its electrical characteristics. It is as a PMOSFET-type because probe has negative charge. Au chemical affinity with thiol was used gate metal in order immobilize DNA. The operating principle very similar that MOSFET. potential determined electric possessed time measured. increased when...
A feasible fabrication technique for nanomachines that are based on carbon nanotubes (CNTs) is demonstrated. Direct nanowiring of CNTs between micrometer islands reported to have been achieved by a growth barrier technique, which prevents vertical the CNTs, i.e., towards substrate. The result “straight” or “Y-shaped” CNT bridges predefined electrodes (see Figure).
A novel differential pressure sensor has been developed with silicon beams embedded in a silicone rubber membrane. The transducer is usable for most applications involving exposure to harsh media. piezoresistive using membrane fabricated on the selectively diffused (100)-oriented n/n+/n substrates by unique micro-machining technique porous etching. sensitivity about 4.75 mV/kPa and non-linearity less than 1.05% FS (full scale).
In this study, we fabricated circular channels using photoresist reflow and isotropic etching. A silicon substrate, Si3N4 as a mask, was selectively etched the hydrofluoric acid, nitric acetic acid (HNA) etching system for fabricating bottom hemisphere of channels. Photoresist used to make top round. Then deposited on reflowed photoresist. Since approximately 6000 Å thick, it possible observe inside channel. We expect apply such simple bio-systems microfluidic devices in which optical...
A hybrid active pixel sensor (APS) was implemented for ultraviolet (UV) imagers by combining a metal- semiconductor-metal (MSM)-type GaN UV and standard Si CMOS APS controller. The photodetector region of the circuit replaced MSM sensor, it connected together on printed board with chip. dark photoresponsive current densities fabricated were 2.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-6</sup> 1.6...
We propose a pixel aperture technique in complementary metal oxide semiconductor (CMOS) image sensor for 3D imaging.In conventional camera systems, the is located between object and CMOS (CIS); this type of consists array with red, green, blue (RGB) Bayer pattern color filters.Our proposed uses blue, white (RGBW) (without filter) filters, on W pixel.A sharp can be obtained from pixels, RGB pixels produce defocused blurring.The compared to obtain depth information imaging.A layer, such as...
Research on perovskite light-emitting diodes (PeLEDs) has primarily focused modulating crystal growth to achieve smaller grain sizes and defect passivation using organic additives. However, challenges remain in controlling the intermolecular interactions between these additives precursor ions for precise modulation of growth. In this study, we synthesize two triphenylphosphine oxide (TPPO)-based multidentate additives: bidentate hexane-1,6-diyl-bis(oxy-4-triphenylphosphine oxide) (2-TPPO)...
In this paper, a novel photodetector using an N-channel metal oxide semiconductor field effect transistor (NMOSFET) with 30 nm-wide silicon nano-wire is described. The was fabricated on silicon-on-insulator (SOI) substrate and its wire patterned by optical lithography, electron beam lithography thermal oxidation. At room temperature, the device has similar I DS - V characteristics to general NMOSFET when incident light supplied instead of gate voltage. A maximum responsivity higher than 1×10...
An analog CMOS vision chip for edge detection with power consumption below 20 mW was designed by adopting electronic switches.An switch separates the circuit into two parts: one is a logarithmic compression photocircuit, and other signal processing detection.The controls connection between circuits.When off, it can intercept current flow through restrict magnitude of several hundred nA.The estimated chip, 128 × pixels, mW.The using 0.25 µm 1-poly 5-metal standard full custom process technology.
This paper presents a CMOS image sensor that uses the pixel aperture technique for extracting depth information while producing conventional 2D images. In sensors, is located at camera lens. However, in proposed sensor, integrated on chip and formed metal layer of process. The array used color information, composed four different types pixels - white with aperture, blue pixels, green without aperture. size pixel, which based four-transistor active pinned photodiode, 2.8 μm × μm. A prototype...
This paper presents a CMOS image sensor with the in-pixel aperture technique for single-chip 2-D and 3-D imaging. In conventional sensors, is located at camera lens. However, in proposed sensor, integrated on chip formed metal layer of (CIS) process. A pixel array composed W, R, B PA pixels (W aperture) extracting color depth information. While W becomes blurred increasing distance from focused object, maintains sharpness. Therefore, can be obtained using defocus method. The size pixel,...
A complementary metal oxide semiconductor (CMOS) image sensor (CIS), using offset pixel aperture (OPA) technique, was designed and fabricated the 0.11-µm CIS process. In conventional cameras, an is located on camera lens. However, in a OPA apertures are integrated as left-offset (LOPAs) right-offset (ROPAs). color pattern built, comprising LOPA, blue, red, green, ROPA pixels. The disparity information can be acquired from LOPA channels. Both two-dimensional (2D) simultaneously geometric...
We developed a new active vision system using an artificial retina chip and the shape memory alloy actuator. A foveated CMOS for edge detection designed fabricated image sensor of actuator was used mimicking roles ocular muscles to track desired target. Also, we proposed computational model that mimics functional our brain organs generating smooth pursuit eye movement. In model, neuromorphic medial temporal cell generates motion energy, superior is considered generate actuating signal so...