A5078411139- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Fractional Differential Equations Solutions
- Electromagnetic Simulation and Numerical Methods
- Model Reduction and Neural Networks
- Iterative Methods for Nonlinear Equations
- Solar Radiation and Photovoltaics
- Electrostatic Discharge in Electronics
- Energy and Environment Impacts
- Analytical Chemistry and Sensors
- Mechanical and Optical Resonators
- Heavy metals in environment
- Solar Thermal and Photovoltaic Systems
- Hybrid Renewable Energy Systems
- Electrochemical sensors and biosensors
- Radioactivity and Radon Measurements
- Numerical methods in engineering
- Photovoltaic System Optimization Techniques
- Nonlocal and gradient elasticity in micro/nano structures
- Radiation Effects in Electronics
- Analog and Mixed-Signal Circuit Design
- Advanced MEMS and NEMS Technologies
- Nuclear Physics and Applications
- Electromagnetic Scattering and Analysis
University of Prishtina
2008-2019
University of Priština - Kosovska Mitrovica
2008-2019
Abstract Photovoltaic (PV) systems are an excellent solution to meet energy demand and protect the global environment in many cases. With increasing utilization of PV system worldwide, there is need for simulation tools predict system’s performance profitability. This research includes testing comparison tools: photovoltaic geographical information (PVGIS), PVWatts, SolarGIS, RETScreen, BlueSol, PVsyst, HelioScope, PV*SOL, Solarius PV, Solar Pro, F-Chart, PolySun, solar advisor model (SAM),...
This study analyzes the grid-connected PV system performances over a 10-year period under temperate continental conditions in Niš. Based on experimental results, we found following: yearly average values of efficiency, Yf, CF, and PR are 10.49%, 1178.51 kWh/kWp, 13.45%, 0.87, respectively. The value for measurement indicates that behavior given 10 years does not change significantly. Besides, mathematical prediction model was obtained through regression analysis, ANOVA applied testing...
In the present paper, we have analytically explored small variations of local pressure in trapped air film both sides clamped circular capacitive micromachined ultrasonic transducer (CMUT), which consists a thin movable membrane silicon nitride (Si3N4). This time-independent profile has been investigated thoroughly by solving associated linear Reynold's equation framework three analytical models, viz. model, plate and non-local model. The solution involves Bessel functions first kind....
In this paper, the homotopy perturbation method (HPM) is applied to coupled set of Schrödinger–Poisson (SP) equations in inversion layer problem for obtaining approximate analytical solution. Inversion n-type considered, and electric quantum limit assumed. By introducing some dimensionless quantities, SP system has been turned into one which can be solved along infinite interval. After appropriate transformations, interval reduced finite (0,1), recurrence series HPM solutions have obtained....
A stochastic model of gamma-ray radiation effects on the density induced charge in silicon dioxide films MOS transistors is presented this paper. It assumed that both generation and trapped recombination are processes. For estimating charges spatially distributed films, a procedure similar to Monte Carlo method was used. The proposed implemented programming language MATHEMATICA enables us, for first time, show distribution as function doses. Using developed model, we have also calculated...
Measurements of radon concentrations in drinking waters conducted on wider territory the town Kruševac included 16 public fountains, which 4 are city itself and 12 surrounding area. water were carried out using detector RAD7 (DURRIDGE Co.). The values range (5.3 ± 0.8) Bq l-1 to (71.0 7.2) below reference level 100 l-1, recommended by European Commission. Since represents one most important causes malignant diseases, annual effective doses ingestion inhalation determined, whose mean 0.04 mSv...
Abstract Modeling of the electrostatic potential for fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented in this article. The modeling based on analytical solution two-dimensional Poisson’s equation obtained by using homotopy perturbation method (HPM). HPM with suitable boundary conditions results so-called general and closed-form, independent surface potential. has been applied output characteristics FDSOI MOSFET, which show...
The modification of an important transition's factor which enables continual behavior the surface potential in entire useful range MOSFET operation is presented. various modifications have been made order to obtain accurate and computationally efficient compact model. best results achieved by introducing generalized logistic function (GL) fitting considered factor. smoothness speed transition from depletion strong inversion region can be controlled this way. explicit model with GL functional...
In this paper, an analyse of variational wave function approach corrections classical surface potential model MOS inversion layer is presented. These solutions are based on smoothing functions and parameters. way explicit versus gate voltage relations in the case strong semiconductor derived. Results these models compared with results obtained by numerical solver coupled Poisson-Schrodinger equations.
In this paper, an analysis of some MOS inversion layer models based on surface potential is presented. semi- classical cases the implicit model and explicit approximate relation for as function terminal voltage used. This compared with which takes into account quantum mechanical effects that arise in deep-submicron MOSFET's. These are incorporated by coupled Poisson-Schrodinger equation solved using variational wave approach, well numerical solver.
In this paper, the expression for charge density in inversion layer at surface of semiconductor has been improved. The improvement is related to replacement an empirical smoothing factor by new one which generalized logistic (GL) functional form. introduction GL function second type original interpolating leads continual and smooth transition (ICD) between different regions metal-oxide-semiconductor (MOS) operation. Moreover, way any determinations are avoided. simulated values ICD match...
The Ion-Sensitive Field-Effect Transistor (ISFET) is one of the most popular pH sensors traditionally using to measure hydrogen ion concentration (pH) electrolytic solutions. It developed from Metal Oxide Semiconductor (MOSFET) by replacing gate electrode with an solution be tested, and a reference metal immersed in that solution. Basic principle ISFET operation based on standard NMOS structure conjunction insulator-electrolyte capacitor as described this paper. site-binding theory...
The application of the homotopy perturbation method (HPM) in two different research's area has been proposed this paper. First, HPM used for approximate solving well-known implicit equation electrostatic surface potential MOSFET transistor. analytical solution obtained case relative simple mathematical form, and simultaneously high degree accuracy. Next, applied determination invariant measures (IMs) non-linear dynamical systems with chaotic behavior. convergence efficiency have confirmed...
Introduction of the Interpolation Logistic (IL) function in an approximate Surface-Potential-Based MOSFET model has been proposed this paper. This can be precisely determined accordance with different device characteristics. The IL also provides continual behavior surface potential entire useful region operation. Unlike analytical models which meet literature, and smooth transition between weak strong inversion here is achieved without using any empirical parameter. Furthermore, thanks to...
The improved surface potential and charge based MOSFET models have been developed in this work.Compared to the corresponding compact models, improvement consists implementation of generalized logistic (GL) functions second type fitting two important smoothing factors.New GL functional forms these factors enable control continuality (SP), inversion density (ICD) drain current entire useful region operation.Beside successful following changes specific technology characteristics devices, also...