A5064403180- Spectroscopy and Laser Applications
- Laser Design and Applications
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- Quantum Dots Synthesis And Properties
- Atmospheric Ozone and Climate
- Advanced Semiconductor Detectors and Materials
Wrocław University of Science and Technology
2020-2024
AGH University of Krakow
2020-2024
We present an optical spectroscopic study of InGaAs/AlInAs active region quantum cascade lasers grown by low pressure metal organic vapor phase epitaxy combined with subwavelength gratings fabricated reactive ion etching. Fourier-transformed photoluminescence measurements were used to compare the emission properties structures before and after processing gratings. Our results demonstrate a significant increase intensity related intersubband transitions in mid-infrared, which is attributed...
In the presented work, influence of quantum well and barrier thicknesses on optical characteristics InGaAs/AlInAs superlattices was reported. Six different structures 0.53 Ga 0.47 As/Al 0.48 0.52 As lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties obtained examined means photoluminescence spectroscopy. This technique allows quick, simple non-destructive measurements radiative transitions in semiconductor heterostructures. The...
In the presented work, an optical approach of stress determining in metalorganic vapor phase epitaxy (MOVPE) grown quantum cascade laser (QCL) structures was reported. case such sophisticated containing hundreds thin layers, it is important to minimize generated QCL core. Techniques enabling determination layers as those described article are photoluminescence and Raman spectroscopies. Based on shift or changes signal, possible analyze occurring structure.
We present an optical spectroscopic study of InGaAs/AlInAs active region quantum cascade lasers grown by low pressure metal organic vapor phase epitaxy combined with subwavelength gratings fabricated reactive ion etching. Fourier-transformed photoluminescence measurements were used to compare the emission properties structures before and after processing gratings. Our results demonstrate a significant increase intensity related intersubband transitions in mid-infrared, which is attributed...
We present the results of Fourier-transform measurements for determination refractive indices four semiconductor alloys in midinfrared spectral range from 10 to 300 K. investigate double-sided-polished, undoped <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><a:mrow><a:mi>In</a:mi><a:mi mathvariant="normal">P</a:mi></a:mrow></a:math> and <e:math xmlns:e="http://www.w3.org/1998/Math/MathML"...
Quantum cascade lasers are sophisticated devices mostly based on InGaAs/AlInAs/InP heterostructures to improve thermal performance.Their structure consists of a core containing hundreds or even thousands thin layers, covered both sides with thick cladding waveguides.Such laser design creates enormous stresses in the and can cause degradation entire device.An alternative InP claddings thin, highly doped InGaAs layers used as plasmonic waveguides.This solution allows achieve mode confinement...