Jaesik Yoon

ORCID: 0000-0002-0950-012X
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About
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Research Areas
  • Gas Sensing Nanomaterials and Sensors
  • Analytical Chemistry and Sensors
  • Semiconductor materials and devices
  • Electrochemical sensors and biosensors
  • Advanced Memory and Neural Computing
  • Fuel Cells and Related Materials
  • Advanced Sensor and Energy Harvesting Materials
  • Ferroelectric and Negative Capacitance Devices
  • GaN-based semiconductor devices and materials
  • Molten salt chemistry and electrochemical processes
  • Conducting polymers and applications
  • Electrocatalysts for Energy Conversion
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Metal and Thin Film Mechanics
  • Electronic and Structural Properties of Oxides
  • Electrochemical Analysis and Applications
  • Advanced biosensing and bioanalysis techniques
  • Electrodeposition and Electroless Coatings
  • Iron and Steelmaking Processes
  • Magnetic and transport properties of perovskites and related materials
  • Metallurgical Processes and Thermodynamics
  • Copper Interconnects and Reliability
  • MXene and MAX Phase Materials
  • Electronic Packaging and Soldering Technologies

Auburn University
2017-2024

Korea Basic Science Institute
2012-2023

University of Central Florida
2022

Inha University
2016

Hanbat National University
2013

Pusan National University
2009-2011

Gwangju Institute of Science and Technology
2008-2010

This paper describes the resistive switching of a cross-point cell array device, with junction area 100 nm x nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack platinum top bottom electrodes served as layer, which shows analog memory characteristics resistance ratio greater than 10. To demonstrate neural network circuit, we operated device an electrically modifiable synapse circuit carried out weighted sum operation. demonstration arrays, based on memory,...

10.1088/0957-4484/20/34/345201 article EN Nanotechnology 2009-08-04

We have investigated a Cu-doped MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /GdO bilayer film for nonvolatile memory applications. By adopting an ultrathin GdO layer, we obtained excellent device characteristics such as resistance ratio of three orders magnitude, uniform distribution set and reset voltages, switching endurance up to 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> cycles, ten years data retention at...

10.1109/led.2009.2015687 article EN IEEE Electron Device Letters 2009-03-31

Nickel (Ni)-based urea biosensors have been proven to be a useful prescreening technology because of their excellent electrocatalyst activities on urea. However, the behavior Ni-based nonenzymatic showed limitations in identifying presence molecules biomarkers such as urine and serum catalytic response Ni element is only applicable an alkaline or OH– environment. To use catalysts physiological situation, pH-independent functioning for electrooxidation necessary. This paper presents that...

10.1021/acsanm.0c01279 article EN ACS Applied Nano Materials 2020-08-06

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> A systematic study on the switching mechanism of an <formula formulatype="inline"><tex Notation="TeX">$\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$</tex></formula> (PCMO) device was performed. polycrystalline PCMO film deposited using a conventional sputtering method. thin Al layer introduced to induce reaction with PCMO, forming aluminum oxide...

10.1109/led.2009.2025896 article EN IEEE Electron Device Letters 2009-08-21

We investigated the state stability of low-resistance (LRS) in a resistive switching memory having Pt/Cu:MoO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> /GdO /Pt structure. Various resistance values LRS were accurately controlled using an external load resistor connected series with device. found that retention time decreased increase LRS. performed accelerating tests for transition from low- to high-resistance under temperatures ranging...

10.1109/led.2010.2042677 article EN IEEE Electron Device Letters 2010-03-19

Few studies have investigated the gas-sensing properties of graphene oxide/titanium dioxide (GO/TiO2) composite combined with photocatalytic effect. Room temperature GO/TiO2 were towards various reducing gases. The sensor showed an enhanced gas response and a faster recovery time than pure GO due to synergistic effect hybridization, such as creation hetero-junction at interface modulation charge carrier density. However, issue long-term stability room still remains unsolved even after...

10.3390/s18103334 article EN cc-by Sensors 2018-10-05

We report an intriguing magnetodielectric coupling in BaTiO3∕γ-Fe2O3 dielectric core/ferrimagnetic shell nanoparticles. The constant steeply increases with magnetic field, and the frequency dependent curve shows a resonancelike peak at high temperatures, while it decreases smoothly field no appears low temperatures. attribute observed to Maxwell-Wagner effect combined magnetoresistance temperatures possible spin-lattice its modification near interfaces

10.1063/1.2817940 article EN Applied Physics Letters 2007-11-19

Sputtered Ag on zinc oxide (ZnO) nanorod-structures grown a carbon paper substrate were investigated as an electrocatalyst for non-enzymatic oxidation of urea. The Ag/ZnO nanorod-modified electrodes characterized by cyclic voltammetry and chronoamperometry in 1 M KOH electrolyte with 0.33 synergetic electrochemical performance due to the combined ZnO nanorod materials shows good sensitivity 0.1622 μAμM−1cm−2 low detection limit 13.98 μM. Simple scalable fabrication electrode can make it...

10.1149/2.1341712jes article EN cc-by Journal of The Electrochemical Society 2017-01-01

The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. Cu-C the cross-point cell array showed typical filament with two orders on/off ratio, exhibiting stable and a narrow distribution set reset voltages in junction. In addition, we area dependence operation current. Based on these results current-voltage temperature, discussed potential mechanism layer.

10.1109/led.2008.2012273 article EN IEEE Electron Device Letters 2009-02-20

Abstract Silver coated ZnO nanorods and nanoflakes with different crystallographic orientations were synthesized by a combination of sputter deposition solution growth process. Catalytic properties morphology‐dependent Ag/ZnO nanostructures then investigated for urea sensors without enzyme. on carbon electrodes exhibit higher catalytic activity an improved efficiency than electrodes. nanorod catalysts more electrochemically surface area (169 cm 2 mg −1 ) electrode facilitate electrooxidation...

10.1002/elan.201800595 article EN Electroanalysis 2018-09-27

Wearable and flexible electrochemical sweat analysis for monitoring health-related urea concentrations with high sensitivity selectivity is highly required individual medical care disease diagnosis. Herein, we report a sensitive selective sensor based on NiCu(OOH)/polystyrene (PS) electrode to detect biomarker. The non-enzymatic was fabricated using electrospinning PS containing carbon nanotube as conductive component co-sputtering Ni-Cu alloys catalyst. provided porous structure, leading...

10.1149/1945-7111/ac34ca article EN Journal of The Electrochemical Society 2021-11-01

We have investigated copper-doped carbon (CuC) as a new solid-state electrolyte material for resistive switching devices. Compared with CuS electrolytes, CuC devices demonstrate good memory characteristics such high resistance ratio of over two orders, higher operation voltage, and temperature retention characteristics. Using 1000 cell array devices, we also confirmed uniform distributions voltages. Both low states showed negligible degradation 104 s at 85 °C, confirming

10.1063/1.3039064 article EN Applied Physics Letters 2008-11-24

Copper-doped amorphous carbon film was prepared by radio frequency reactive magnetron sputtering and their resistive switching behaviors were studied under a conductive atomic force microscope (cAFM). The repetitive scanning over the same area using cAFM with various bias voltages revealed that most of isolated paths involved in asymmetric nonlinear I-V characteristics. observed behavior nanoscale filamentary channels indicates electron transfer mechanism channel Pt/CuC/Pt is tunneling...

10.1063/1.3570653 article EN Applied Physics Letters 2011-04-11

Crystallographically anisotropic two-dimensional (2D) molybdenum disulfide (MoS2) with vertically aligned (VA) layers is attractive for electrochemical sensing owing to its surface-enriched dangling bonds coupled extremely large mechanical deformability. In this study, we explored VA-2D MoS2layers integrated on cellulose nanofibers (CNFs) detecting various volatile organic compound gases. Sensor devices employing MoS2/CNFs exhibited excellent sensitivities the tested gases of ethanol,...

10.1088/1361-6528/ac8811 article EN Nanotechnology 2022-08-09

We investigated the electrical properties of a Pt/Nb-doped SrTiO3 (Nb:STO) single crystal Schottky junction. The junction exhibited highly rectifying current–voltage (I–V) characteristics under DC bias. To make profile, capacitance–voltage (C–V) curve for reverse bias was measured – showed little change in barrier height. large leakage current problem Nb:STO oxide overcome using an ultrathin metal–oxide–semiconductor (MOS) capacitor model. On basis our results and previous reports, we...

10.1143/jjap.47.8749 article EN Japanese Journal of Applied Physics 2008-12-01

We found that the charge loss behavior of metal-alumina-nitride-oxide-silicon-type flash memory was highly dependent on amount injected (Qinj). Beyond critical level Qinj, direction dominant changed from pointing toward SiO2 to Al2O3. The charges could cause band bending Al2O3, which reduced tunneling distance across Al2O3 with low conduction offset. These results were verified by experimental and theoretical device modeling through a comparison rate between SiO2∕Si3N4∕SiO2 stack...

10.1063/1.3041642 article EN Applied Physics Letters 2008-12-08

For the device application of resistive change memory, performance as well uniformity and understanding mechanism is necessary. The resistance due to filament formation undesirable, it hard apply for practical application. In order have a nonlocalized, uniformly distributed, nonfilamentary-type memory device, switching based on oxide deformation beneficial. This phenomenon largely depends metal electrode top oxides. this study both performance, such pulse speed, were understood with...

10.1149/1.3072792 article EN Journal of The Electrochemical Society 2009-01-01
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