A5101459567- Advanced Photocatalysis Techniques
- Semiconductor materials and devices
- Thermochemical Biomass Conversion Processes
- TiO2 Photocatalysis and Solar Cells
- Ga2O3 and related materials
- Biodiesel Production and Applications
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Fire Detection and Safety Systems
- Maritime Transport Emissions and Efficiency
- Advanced materials and composites
- Semiconductor Lasers and Optical Devices
- Ship Hydrodynamics and Maneuverability
- Optical Wireless Communication Technologies
- Advanced ceramic materials synthesis
- Spacecraft and Cryogenic Technologies
- Photonic and Optical Devices
- Municipal Solid Waste Management
- 2D Materials and Applications
- Chemical Looping and Thermochemical Processes
- Thin-Film Transistor Technologies
- Anatomy and Medical Technology
- Organic Light-Emitting Diodes Research
- Cavitation Phenomena in Pumps
- Quantum Dots Synthesis And Properties
Hanyang University
2012-2024
Korea Electrotechnology Research Institute
2024
Sogang University
2020-2022
Korea University
2021-2022
Kyungpook National University Hospital
2021
Sejong University
2019-2021
Pohang University of Science and Technology
2020
Chosun University
2013-2018
Hyundai Heavy Industries (South Korea)
2009-2014
Dongguk University
2012
Effective channel control with low contact resistance can be accomplished through selective ion implantation in Si and III–V semiconductor technologies; however, this approach cannot adopted for ultrathin van der Waals materials. Herein, we demonstrate a self-aligned fabrication process based on self-terminated p-doping layer-by-layer chemical etching to achieve as well high on/off current ratio tungsten diselenide (WSe2) field-effect transistors (FETs). Damage-free thinning of the WSe2 is...
The authors developed a high throughput (70 Å/min) and scalable space-divided atomic layer deposition (ALD) system for thin film encapsulation (TFE) of flexible organic light-emitting diode (OLED) displays at low temperatures (<100 °C). In this paper, the report excellent moisture barrier properties Al2O3 films deposited on 2G glass substrates an industrially relevant size (370 × 470 mm2) using newly ALD system. This new reduced cycle time to less than 1 s. A growth rate 0.9 Å/cycle...
Abstract Doping of van der Waals layered semiconductor materials is an essential technique to realize their full potential for implementation in nanoelectronics. Herein, defect‐engineered and area‐selective n‐doping ambipolar multi‐layer WSe 2 are demonstrated via Ar plasma treatment. The contact regions the exposed a mild treatment induce Se vacancy, while channel region protected by hexagonal boron nitride. results systematically analyzed using structural optical characterization methods,...
Three twisted rudders fit for large container ships have been developed; 1) the Z-twisted rudder that is an asymmetry type taking into consideration incoming flow angles of propeller slipstream, 2) ZB-twisted with a bulb added onto rudder, and 3) ZB-F fin attached to rudder. The designed computationally hydrodynamic characteristics in self-propulsion condition mind. governing equation Navier-Stokes equations unsteady turbulent flow. turbulence model applied Reynolds stress. calculation was...
The three-terminal off-state breakdown voltage of the β-Ga 2 O 3 nanoFET with beveled field-plate (FP) was obtained at +441 V, enhanced by downstream plasma-etched 60° h-BN FP structure.
With the advent of artificial intelligence era, semiconductor materials with exceptional performance are increasingly in demand. Beta-gallium oxide (β-Ga 2 O 3 ) is a promising candidate for advanced applications; however, its...
The feasibility of optical wireless communication links using high-brightness illumination light-emitting diodes (LEDs) is experimentally verified. We measure the modulation bandwidths red-, green-, and blue-colored LEDs eye patterns for incorporating single- multi-LED transmitters. single-color red, green, blue are compared. An link consists an transmitter module with seven LEDs, a packaged silicon photodiode as receiver. bit error rate (BER) curves measured by varying distance horizontal...
In this paper, we propose 4H-SiC UMOSFET structure with improved single-event burnout (SEB) hardening characteristics, and compare it the conventional by conducting numerical technology computer-aided design (TCAD) simulations. The SEB safe operating areas are extracted when heavy ions different linear energy transfer (LET) collide device. Because integrated heterojunction diode (HJD) in proposed features hole collection effect due to difference of valence band level, generated current can...
This article examines the scale effect of flow characteristics, resistance and propulsion performance on a 317k VLCC. The turbulent flows around ship in both towing self-propulsion conditions are analyzed by solving Reynolds-averaged Navier-Stokes equation together with application Reynolds stress turbulence model. computations carried out model- full-scale. A double-body model is applied for treatment free surface. An asymmetric body-force propeller used. speed performances including...