A5087311967- Semiconductor materials and devices
- Carbon Nanotubes in Composites
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Plasmonic and Surface Plasmon Research
- Ferroelectric and Negative Capacitance Devices
- Perovskite Materials and Applications
- Photonic Crystals and Applications
- Advanced Memory and Neural Computing
- Semiconductor Quantum Structures and Devices
- Nanotechnology research and applications
- Diamond and Carbon-based Materials Research
- Quantum and electron transport phenomena
- Graphene research and applications
- MXene and MAX Phase Materials
- Terahertz technology and applications
- Fullerene Chemistry and Applications
- Copper Interconnects and Reliability
- Metamaterials and Metasurfaces Applications
- Mechanical and Optical Resonators
Hongik University
2024
Seoul National University
2002-2022
Max Planck Institute for Polymer Research
2018
IBM Research - Thomas J. Watson Research Center
2003
Atomic layer deposition (ALD) has been studied for several decades now, but the interest in ALD of metal and nitride thin films increased only recently, driven by need highly conformal nanoscale modern semiconductor device manufacturing technology. is a very promising technique with ability to produce excellent conformality compositional control atomic scale dimensions. However, applications metals nitrides processes require deeper understanding about underlying process as well physical...
Electronic standing waves with two different wavelengths were directly mapped near one end of a single-wall carbon nanotube as function the tip position and sample bias voltage high-resolution position-resolved scanning tunneling spectroscopy. The observed caused by separate spin charge bosonic excitations are found to constitute direct evidence for Luttinger liquid. increased group velocity excitation, power-law decay their amplitudes away from scattering boundary, suppression density...
We report a novel strategy for developing an outstanding transparent p-type conducting oxide exhibiting deep work function as well wide band gap by engineering the polarizability of strongly correlated NiWO 4 .
In the last decade, a surge in research on hafnium oxide (HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> )-based ferroelectricity has become significant part of semiconductor trend. this work, we present new factor, that is, process damage to HfO -based ferroelectric implementation. By reversely exploiting harmful metal-oxide-semiconductor process, is improved by eliciting early amorphization suitable for orthorhombic phase...
We prove that build-up of evanescent surface waves are responsible for the enhanced transmission, by comparing periodic and random arrays holes punctured in metal dielectric absorber substrate.
We use intense THz pulses of different generation schemes to excite optical phonons or induce acceleration electrons in methylammonium lead halide perovskites. induced transient spectra over a broad visible range including the band gap are detected by femtosecond pulses. observe both resonant and non-resonant modulations transmittance near gap. model contributions time- probe frequency domain.