A5008029507- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Glass properties and applications
- Analytical Chemistry and Sensors
- TiO2 Photocatalysis and Solar Cells
- Advanced Photocatalysis Techniques
- Electronic and Structural Properties of Oxides
- Catalytic Processes in Materials Science
- Ferroelectric and Piezoelectric Materials
- Mesoporous Materials and Catalysis
- Microwave Dielectric Ceramics Synthesis
- Advancements in Solid Oxide Fuel Cells
- Semiconductor materials and devices
- Clay minerals and soil interactions
- Pigment Synthesis and Properties
- Advanced ceramic materials synthesis
- Catalysis and Oxidation Reactions
- Thin-Film Transistor Technologies
- Advancements in Battery Materials
- Luminescence Properties of Advanced Materials
- Iron oxide chemistry and applications
- Multiferroics and related materials
- Silicone and Siloxane Chemistry
- Advanced Battery Materials and Technologies
Romanian Academy
2014-2024
Laboratoire de Chimie
2020-2021
Institut des Sciences et Technologies Moléculaires d'Angers
2020
Université d'Angers
2020
Universitatea Națională de Știință și Tehnologie Politehnica București
2020
Donghua University
2020
Academy of Romanian Scientists
1998-2018
University of Bucharest
2018
University of California, Davis
2004
National Institute of Materials Physics
1993
The aim of the present study was development Nb-doped ITO thin films for carbon monoxide (CO) sensing applications. detection CO is imperious because its high toxicity, with long-term exposure having a negative impact on human health. Using feasible sol-gel method, doped were prepared at room temperature and deposited onto various substrates (Si, SiO2/glass, glass). structural, morphological, optical characterization performed by following techniques: X-ray diffractometry (XRD), atomic force...
Undoped and Zn-doped ITO (ITO:Zn) multifunctional thin films were successfully synthesized using the sol-gel dipping method on three different types of substrates (glass, SiO2/glass, Si). The effect Zn doping optoelectronic, microstructural, gas-sensing properties was investigated X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron (SEM), transmission (TEM), spectroscopic ellipsometry (SE), Raman spectroscopy, Hall measurements (HE), gas testing. results showed that...
The densification of SnO 2 (0.9 mol)–Sb O 3 (0.1 mol) solid solution without any additives was studied by conventional and field‐activated sintering technique (FAST). FAST achieved a relative density value 92.4% at 1163 K for 10 min versus 61.3% in 1273 h. An abnormal reduction the IR transmittance semiconductor defect structure with only one donor level energy gap were noticed FAST‐sintered as compared conventionally sintered Sn 0.82 Sb 0.18 solution. A high charge carrier concentration...