A5058042203- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Ferroelectric and Piezoelectric Materials
- Perovskite Materials and Applications
- Transition Metal Oxide Nanomaterials
- Neuroscience and Neural Engineering
- ZnO doping and properties
- Ga2O3 and related materials
- Advanced Sensor and Energy Harvesting Materials
- 2D Materials and Applications
- CCD and CMOS Imaging Sensors
- Gas Sensing Nanomaterials and Sensors
- Multiferroics and related materials
- MXene and MAX Phase Materials
Yonsei University
2021-2025
Abstract Oxide‐based memristors are promising candidates for artificial neural network computations using neuromorphic hardware. However, when arranged in large‐scale arrays, their performance is often hindered by challenges such as poor reliability and sneak currents. To address these, Al, N‐doped TaO x (ANTO) precisely engineered this study atomic layer deposition (ALD). The oxygen vacancy (V o ) content can be regulated controlling the dopant concentrations via number of ALD cycles,...
Piezoelectric materials with tunable photoluminescence have gained widespread attention for their application in optical communications and optoelectronic sensing devices. This has provided new opportunities to explore the possibility of developing flexible piezoelectric devices both piezoelectricity multifunctional applications. In this study, we prepared a crystalline Pr‐doped perovskite BaTiO 3 (BPTO) film on mica substrate using radio‐frequency (RF) sputtering technique. The intensity...
The present study pioneered an oxygen migration-driven metal to insulator transition Mott memory, a new type of nonvolatile memory using lanthanum titanium oxide (LTO). We first show the reset bipolar property without initial electroforming process in LTO. used oxygen-deficient ZnO as interlayer between LTO and W electrode clarify whether migration activates transition. deficiency provides ion paths well reservoir, facilitating from electrode. Thus, including improved electrode, achieving...
Transition metal dichalcogenide (TMDC) materials are attractive candidates for 2D solar cell devices thanks to their straightforward integration with various substrates and traditional semiconductor technologies, wide band gap ranges over the visible light spectrum, high absorption coefficient values. Although there several previous reports on fabrication of material-based cells, difficult complex processes in highly required be modified wider use daily life applications. Photolithography,...