A5075565150- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Molecular Junctions and Nanostructures
- Advanced Fiber Optic Sensors
- Semiconductor Quantum Structures and Devices
- Photonic Crystals and Applications
- Optical Network Technologies
- Thermodynamic and Structural Properties of Metals and Alloys
- Metallurgical and Alloy Processes
- Optical Coatings and Gratings
- Advanced Thermoelectric Materials and Devices
Chalmers University of Technology
2017-2022
École Nationale Supérieure des Mines de Nancy
2002
We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm.High power is enabled by relatively large oxide aperture an epitaxial design for low resistance, optical loss, high slope efficiency VCSELs.With the supporting multiple unrestrained modes, operation achieved filter etched into surface of VCSEL.While specifically designed light source integration on silicon photonic integrated circuit, its performance in terms power, spectral purity,...
An investigation of angled flip-chip integration a singlemode 850 nm vertical-cavity surface-emitting laser (VCSEL) on silicon nitride photonic integrated circuit (PIC) is presented. Using numerical FDTD simulations, we consider the conditions under which VCSEL can be at an angle over grating coupler with high coupling efficiency and low optical feedback. With both feedback decreasing increasing angle, there trade-off. co-directional coupling, first-order diffraction loss sets in critical...
With an intracavity phase tuning technique, the authors demonstrate <2 nm precision in wavelength setting of vertical-cavity surface-emitting laser (VCSEL) microresonators range 1040–1070 using Ar ion-beam etching process with subnanometer etch depth. This postgrowth fabrication technique for controlling individual VCSELs is promising development monolithic multiwavelength VCSEL arrays precisely defined wavelengths division multiplexed (WDM) optical interconnects and assembly compact...
Monolithic multi-wavelength VCSEL arrays, with wavelengths of individual VCSELs precisely set in a post-epitaxial growth process, would enable compact multi-color light sources and transmitters for various sensing datacom applications. Here we report on numerical study the requirements spectral matching balancing DBR reflectances, optical confinement factor, gain uniformity threshold current slope efficiency over wavelength by intra-cavity phase tuning. The are verified an experimental...
The short-reach optical interconnects used in datacenters and high-performance computing systems are dominated by VCSEL multimode fiber (MMF) links <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup> . VCSEL-MMF technology is the most cost power efficient offers smallest footprint. VCSELs operating at 25-28 Gbit/s production xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> while research has extended modulation bandwidth to 30 GHz...
We demonstrate monolithic multi-wavelength VCSEL arrays with wavelengths set by intra-cavity phase tuning. Precise channel spacing is achieved Ar-ion etching. Uniform performance over an array spectral matching and balancing of wavelength dependent gain, DBR reflectances optical confinement factor.
A measurement technique for the thermoelectric power of materials between 300 and 1200 K is proposed described. The temperature regulation uses Peltier effect or Joule provided by modules. modules are built using FeSi/sub 2/ material, allowing a precise fast control. fabrication as well set-up described discussed. Some experimental data shown.