A5090816067- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Thermal Radiation and Cooling Technologies
- Strong Light-Matter Interactions
- Advanced Fiber Laser Technologies
- Network Security and Intrusion Detection
- Metal and Thin Film Mechanics
- Quantum optics and atomic interactions
- Nonlinear Photonic Systems
- Information and Cyber Security
- Advanced Malware Detection Techniques
- Plasmonic and Surface Plasmon Research
- Semiconductor Quantum Structures and Devices
Ubitech (Greece)
2023
University of Crete
2015-2020
FORTH Institute of Electronic Structure and Laser
2018-2020
Foundation for Research and Technology Hellas
2020
University of Patras
2010
The optical properties of thick InGaN epilayers, with compositions spanning the entire ternary range, are studied in detail. High structural quality, single phase InxGa1-xN (0001) films were grown heteroepitaxially by radio-frequency plasma assisted molecular-beam epitaxy on freestanding GaN substrates. Their emission characteristics investigated low temperature photoluminescence spectroscopy, whereas variable angle spectroscopic ellipsometry was applied to determine complex dielectric...
The photovoltaic properties of (0001) n-InGaN/p-GaN single heterojunctions were investigated numerically and compared with those conventional p-GaN/i-InGaN/n-GaN structures, employing realistic material parameters. This alternative device architecture exploits the large polarization fields, high efficiency modules are achieved for In-rich, partially relaxed coherently strained InGaN films. Conversion efficiencies up to 14% under AM1.5G illumination can be reached, revealing true potential...
We study the effects of optical nonlinearity in asymmetric adiabatic three-waveguide directional couplers, that consist both linear and nonlinear waveguides. consider several combinations waveguides show different have switching characteristics. also find structure where central waveguide is two outer are does not play a role.
Alloy clustering and consequent carrier localization in InGaN alloys are important aspects with large effect materials’ optoelectronic properties related device operation. Their importance is even higher for alloy compositions close to midrange where compositional fluctuations get stronger. Such considered a result of thermodynamic immiscibility indium segregation structural defects. However, their dependence on the epitaxial growth process unknown. Here, we examined degree resulting surface...
The rapid digitalisation of SMEs, further expedited as a business continuity measure against Covid19 impact, has brought along major cybersecurity challenges, it creates fertile landscape for malicious actors, that want to capitalise on the insufficient planning and preparedness SMEs conduct low-effort, lucrative attacks. This paper constitutes case study specificities safeguarding ATracker, real-life data collection analytics engine developed by SME Suite5. ATracker been successfully...