We propose a complete model for the oxidation of silicon germanium. Our includes participation both and germanium atoms in process replacement by mixed oxides. is capable predicting, as function time, oxide thickness, profile underlying alloy, oxide. The parameters vary with temperature, alloy composition, oxidizing ambient. shows excellent agreement published results, following trends consistent physical phenomena hypothesized. presence catalyzes rates, all reaction rates increase...

Cu pumping, or the extrusion of out a TSV after being subjected to high temperature conditions, is one highest risk failure modes be overcome in development TSV-middle integration for 3D packaging technologies. Typical pumping analyses focus on low number data points through brute force measurement using cross sectional analysis. The gathered each condition does not provide results with statistical confidence level. In addition, it most likely that section along plane contains amount...

This paper presents challenges encountered in the fabrication of high aspect ratio (AR) via middle, through-silicon vias (TSVs), 3 μm top entrant critical dimension and 50 depth. Higher AR TSV integration is explored due to lower stress copper pumping influence TSVs observed adjacent CMOS devices. The key process improvements demonstrated this include etch, dielectric liner coverage, metal barrier seed layer electroplating.

For the first time, a near-Zero Keep Out Zone TSV capability is demonstrated utilizing Middle Of Line (MoL) layer stack process development and optimization. This MoL consisted of nitride, PMD oxide, contact protection layer. Careful selection high CTE Contact Protection to compensate induced stress in Silicon (Silicon 2.3ppm/°C) yields Zone, confirmed with silicon measurement data.

This paper presents challenges encountered in the fabrication of high aspect ratio (AR) via middle, Through Silicon Vias (TSV), 3μm top entrant critical dimension (CD) and 50μm depth. Higher AR TSV integration is explored due to lower stress influence TSVs observed adjacent CMOS devices.

Crackstops play an important role in protecting the IC prime from moisture ingress as well impinging cracks. The introduction of thinner BEoL dielectric layers and ULK materials advanced CMOS technology resulted more vulnerable crackstop structures. Through Silicon Via (TSV) allows creation solid copper monolith walls that lack any seams or weak points associated with conventional layer by construction traditional die seals crackstops. It was found previous work [1] a superior structure...

The ability of Through Crackstop Via (TCV) to prevent cracks from propagation is compared conventional crackstop using a novel systematic simulation methodology. design TCV is, then, optimized by varying the angle between metal layers as well width. larger and width result in better TCV. improvement saturates at specific

This paper presents a systematic methodology by thermal characterization and simulation of 3-FET stacked K/Ka-band class-AB power amplifier built on GLOBALFOUNDRIES 45nm SOI process. A detailed temperature profile is obtained in the FEOL BEOL stacks first using special gate Kelvin measurement structures novel metal sensor stack at several Mx layers (M <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> -M...

Scaling down the dimensions of active devices is becoming increasingly difficult as silicon approaching its physical material limits. 3D integration logic and memory has emerged a solution to bandwidth power efficiency challenges. Mechanical stress induced by Through Silicon Vias (TSVs) one main constraints that have be controlled preserve integrity front end devices. The plastic behavior copper used in TSVs simulated this work. simulations make use experimental data were recently published...

The understanding of self-heating effects and heat dissipation in semiconductor devices is a necessary element for the accurate modeling prediction reliability indicators. Unfortunately, small dimensions, complex device structures, presence thin-oxidized interfacial layers make it impractical to determine these quantities experimentally. In this work, we calculate electrical conductances (<inline-formula> <tex-math notation="LaTeX">${\sigma }$ </tex-math></inline-formula>), electronic...

The first systematic study for the phase to form during cobalt germanidation was conducted. Hexagonal β-Co5Ge3 in case of on (100) Ge. This formed at a temperature as low 227 °C. Monoclinic CoGe experimentally shown be second same temperature. Our results are contrary previous reports suggesting monoclinic form. is mainly due experimental setup that designed detect all forming phases: in-situ XRD monitoring constant long time anneals 24–48 h. We also report both and phases were highly...

Road traffic accidents continue to be a problem across the world and according statistics cause high mortality economic losses. This research work conceptualizes an idea that will use open data machine learning models forecast on roads in order promote road safety. Based presented literature review, framework incorporates step-by-step procedure analyze risk factors for targeted safety interventions, including pre-processing feature selection, application of chosen model high-risk zones...

On 14 December 1988, the United States announced its decision to start a dialogue with Palestine Liberation Organization (PLO), reversing ban that had been in effect since 1975. At time, Secretary of State Henry Kissinger made secret commitment Israel U.S. would not negotiate PLO unless it recognizes Israel's right exist and accepts UN Security Council Resolution 242. Later, conditions were extended include renunciation terrorism. The process led reach an understanding regarding was long...

We present a summary of some the main Back End Line (BEoL) design optimization techniques to mitigate Chip Package Interaction (CPI) risk in flip-chip configuration. Optimization include metal tiles right on top stack at corner die beyond bumps, diagonal final aluminum cap lines under octagon shape pads 80° PSPI angle opening, as well wider double rail crackstops.

An experimental correlation showing flipchip packaged larger dies more susceptible to corner delamination is, first, established in this work. Chamfer structures have been inserted into the architecture of traditional orthogonal crackstop designs with aim alleviate accumulation strains present corners dies. Finite element modeling (FEM) was employed uncover optimum chamfer structure size that minimizes both space usage as well chip package interaction (CPI) related risks. Die shown...

With the advancement of circuit generations, architectures and technology nodes progressing to smaller transistor sizes; a decrease in thickness BEoL layers these integrated circuits (IC) is also occurring. In addition, mature older have experienced product life cycle extensions through integration new upgrade enhancements that are closely associated with layer or its respective dielectric stack [1]. Typically heavy focus placed on in-plane X Y dimensions shrinking materials features. They...

The problem of shear transfer between different types concrete surface cast at ages has been discussed in many researches. Different treatments and connectors were studied experimentally to test their efficiency what is called the (composite section) which could be formed a precast beam place slab. In this research eleven composite concrete-concrete T-section with dimensions (beam 120*400*2000mm slab 500*100*2000mm) tested under static concentrated load middle span, one them was reference...

We propose the first multiphase TCAD cobalt germanide growth model that can predict resulting phase based on germanidation time, temperature, and ambient. The has been calibrated to experimental results reported in literature as well our own data. This help design of contacts with low resistance.