A5058463106- ZnO doping and properties
- Ga2O3 and related materials
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Perovskite Materials and Applications
- 2D Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- Copper-based nanomaterials and applications
- Quantum Dots Synthesis And Properties
- Electronic and Structural Properties of Oxides
- Chalcogenide Semiconductor Thin Films
- Multiferroics and related materials
- GaN-based semiconductor devices and materials
- Solid-state spectroscopy and crystallography
- Ferroelectric and Piezoelectric Materials
- MXene and MAX Phase Materials
- Magnetic and transport properties of perovskites and related materials
- Metal and Thin Film Mechanics
- Advanced Thermoelectric Materials and Devices
- Quantum and electron transport phenomena
- Acoustic Wave Resonator Technologies
- Magnetic properties of thin films
- Welding Techniques and Residual Stresses
- Semiconductor Quantum Structures and Devices
- Transition Metal Oxide Nanomaterials
Hubei University
2016-2025
Beijing Institute of Technology
2022-2024
Northeast Agricultural University
2024
Ministry of Agriculture and Rural Affairs
2024
Shandong University
2024
North University of China
2024
University of Southern California
2024
Arizona State University
2018-2024
Advisory Board Company (United States)
2024
Chiba University
2024
Ferroelectric (FE) materials are thought to be promising for self-powered ultraviolet (UV) photodetector applications because of their photovoltaic effects. However, FE-based photodetectors exhibited poor performance the weak effect FE depolarization field (Edp) on separation photo-generated carriers. In this work, based both Edp and built-in electric at p-n junction (Ep-n) were designed obtain enhanced device performance. A NiO/Pb0.95La0.05Zr0.54Ti0.46O3 (PLZT) heterojunction-based is...
Ga2O3 is a wide-bandgap semiconductor that has shown great potential for application in solar-blind ultraviolet (UV) photodetectors. However, the responsivity and detectivity of Ga2O3-based self-driven UV photodetectors are insufficient practical applications at present because limited separation photogenerated carriers devices. In this work, Hf0.5Zr0.5O2/β-Ga2O3 heterojunction-based constructed by combining ferroelectric Hf0.5Zr0.5O2 (HfZrO2) material with Ga2O3, taking advantage ultrawide...
The built-in electric field associated with a junction, e.g., p–n conjunction, can drive the separation and transport of photogenerated carriers to make self-driven photodetectors, but its strength is limited, thus, device performance requires further improvement. Herein, we propose enhance driving by constructive superposition fields two or more junctions designed junction n–n heterojunction-coupled photodetector involving three prevalent wide-bandgap semiconductors, namely, p-GaN,...
Abstract Ferroelectric materials have aroused increasing interest in the field of self‐powered ultraviolet (UV) photodetectors for their polarization electric induced photovoltaic (PV) effect. However, device performance currently reported ferroelectric‐based UV detectors remains to be improved. Herein, achievement high‐performance ZnO/Pb 0.95 La 0.05 Zr 0.54 Ti 0.46 O 3 (PLZT) heterojunction‐based is demonstrated by coupling ferroelectric depolarization ( E dp ) and built‐in ZnO/PLZT at...
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Abstract Increasing the electric field in a solar cell is of importance to alleviate carrier recombination and thus increase power conversion efficiency (PCE). In this paper, strategy reported enhance internal Cu(In,Ga)(Se,S) 2 (CIGS) cells by inserting ferroelectric BaTiO 3 (BTO) layer into device for first time. The BTO location CIGS found play vital role performances, which due adjustment direction depolarization field. Impressively, PCE increased from 4.83% 16.07% when shifts opposite...
The band-edge emission of CsPb<sub>2</sub>Br<sub>5</sub> was located at 385 nm, not in the visible range as reported literature.
Thermoelectric materials have attracted great attention due to their important applications in power generation, energy saving, and electric refrigeration. In this article, we designed three two-dimensional SnX (X = O, S, Se), which exhibit high stability. All monolayers are direct band gap semiconductors with a "multivalley" characteristic structures, showing bandgaps of 2.87, 1.83, 1.27 eV for SnO, SnS, SnSe, respectively. addition, the optimum factor values can be up 0.91–0.97 W m–1 K–2...
Abstract The family of polar hybrid perovskites, in which bulk photovoltaic effects (BPVEs) drive steady photocurrent without bias voltage, have shown promising potentials self‐powered polarization‐sensitive photodetection. However, reports BPVEs 3D perovskites remain scare, being mainly hindered by the limited dipole moment or lack symmetry breaking. Herein, a perovskitoid, (BDA)Pb 2 Br 6 (BDA = NH 3 C 4 H 8 ), where spontaneous polarization ( P s )‐induced BPVE drives photodetection...
A novel 3D (NMPDA)Pb 2 Br 6 (NMPDA = N -methyl propane diammonium) with distinct lattice deformation and structure asymmetry was constructed, which enables remarkable STE emission photoelectronic anisotropy.
Two-dimensional (2D) perovskites have emerged as potential single-source white-light emitters in solid-state lighting. However, the quantum yields (PLQY) remain modest, probably ascribed to limitation of octahedral distortion modulation. Herein, it is demonstrated that PLQY 2D lead bromide can be further enhanced 12.8% if they contain a bulk and optically active conjugated ditertiary ammonium cation N,N,N′,N′-tetramethyl-1,4-phenylenediammonium (TMPDA). The pristine alkyl...
In order to enhance the visible-light transmittance while reducing insulator–metal transition (IMT) temperature, Hf–W co-doping is designed for modification of VO2. We grow high-quality HfxWyV1−x−yO2 (HfWVO2) alloy films on c-plane sapphire substrates by pulsed laser deposition, and test structural, electrical, optical properties various techniques. The co-doped VO2 exhibit outstanding thermochromic performances with a high luminous up 41.1%, fairly good near-infrared modulation capacity...
As an ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) holds great application potential in deep-ultraviolet (DUV) photodetectors. While the performance of photodetectors based on crystalline Ga2O3 thin films grown hard substrates has been continuously improved, amorphous less-stringent a more convenient and accessible way emerged as alternative technology received increasing attention. Herein, we choose thulium (Tm) for doping grow Tm-Ga2O3 non-lattice-matched flexible mica...
Au/Ag nanoshuttles with sharp tips at both ends have been synthesized in glycine solution by chemically depositing silver on gold nanorods. Strong local field the enhanced longitudinal surface plasmon resonance (LSPR) were investigated theoretical calculations and experimental measurements. At corresponding LSPR wavelengths, extinction cross section nonlinear refraction of are about 1.5 8.0 times those original Au nanorods, respectively.