A5068141753- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Photoreceptor and optogenetics research
- Semiconductor Quantum Structures and Devices
- Gas Sensing Nanomaterials and Sensors
- Neural Networks and Reservoir Computing
- Advanced Sensor and Energy Harvesting Materials
- Thin-Film Transistor Technologies
- Ferroelectric and Negative Capacitance Devices
- Metamaterials and Metasurfaces Applications
- Plasmonic and Surface Plasmon Research
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Organic Electronics and Photovoltaics
- Organic Light-Emitting Diodes Research
- Optical Coatings and Gratings
- 2D Materials and Applications
- Transition Metal Oxide Nanomaterials
- Perovskite Materials and Applications
- Photonic Crystals and Applications
- Syphilis Diagnosis and Treatment
- HIV/AIDS oral health manifestations
Suzhou Institute of Nano-tech and Nano-bionics
2012-2025
Chinese Academy of Sciences
2007-2025
University of Science and Technology of China
2022-2025
Tianjin University
2024
Henan Normal University
2024
The First Affiliated Hospital, Sun Yat-sen University
2022
Sun Yat-sen University
2022
Suzhou Research Institute
2021
Forschungsverbund Berlin
2020
Paul Drude Institute for Solid State Electronics
2020
Abstract Broadband ultraviolet (BUV) photodetectors responding to the multiband spectrum can effectively reduce false alarm rates and improve accuracy versatility of detection systems in various situations. A high‐responsivity BUV photodetector based on vertical Ga 2 O 3 /GaN nanowire array is proposed demonstrated. nanowires are obtained by partially thermally oxidizing GaN grown molecular beam epitaxy used combine with a monolayer graphene film form graphene/Ga heterojunction. Moreover,...
Abstract In this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga 2 O 3 nanowire array heterojunction was proposed and demonstrated. To best of our knowledge, it is first time that vertical arrays have been realized. nanowires were obtained by thermally oxidizing GaN grown molecular beam epitaxy n-doped Si substrate. Then, monolayer graphene film transferred to form transparent electrodes. The fabricated device exhibited responsivity (R) 0.185 A/W...
Self-powered ultraviolet (UV) photodetectors (PDs) are promising and essential for the applications of next-generation optoelectronic devices. This work proposes demonstrates a self-powered photoelectrochemical (PEC) PD with three excellent characteristics successfully, which ultrahigh transmissivity, UV/visible reject ratio responsivity. Thanks to can achieve critical factor quasi-invisible functionality realize 360° omnidirectional detection. Due angle-dependent photoresponsivity, this PEC...
Due to the requirements of oceanography exploration and detection, self-powered photodetectors (PDs) with low-power consumption are essential for next-generation optoelectronic applications. In this work, we successfully demonstrate a photoelectrochemical (PEC) PD in seawater based on (In,Ga)N/GaN core-shell heterojunction nanowires. Compared those pure water, it is found that upward downward overshooting features current can be key reason contributing much faster response speed seawater....
The fast development of brain-inspired neuromorphic computing systems has stimulated urgent requirements for artificial synapses with low-power consumption. In this work, a photonic synaptic device based on (Al,Ga)N nanowire/graphene heterojunction been proposed and demonstrated successfully. the device, incident light, heterojunction, light-generated carriers play roles action potential, pre-synaptic/post-synaptic membrane, neurotransmitter in biological synapse, respectively. As key...
Abstract In the natural world, human brain is most powerful information processor, using a highly parallel, efficient, fault‐tolerant, and reconfigurable neural network. Taking inspiration from this impressive architecture, optoelectronic synaptic devices have gained considerable attention for their ability to process retain data simultaneously, making them essential components in upcoming era of neuromorphic computing systems. recent years, significant progress has been made development...
We propose a dynamically tunable broadband linear-to-circular cross polarization converter based on Dirac semimetals. The proposed unit cell consists of center-cut cross-shaped metallic patterned structure with sandwiched semimetal ribbon polyimide substrate bottomed gold. system converts linear waves to right-hand circular polarized in the frequency ranges 1.5–2.8 THz or left-hand two narrow 1.20–1.25 and 3.04–3.07 THz. conversion is by varying Fermi energy without re-optimizing...
Abstract Flexible self‐powered ultraviolet (UV) photodetectors (PDs) with an invisible functionality are essential but challenging to be fabricated for the applications of next‐generation optoelectronic devices. In this work, a flexible photoelectrochemical (PEC) (Al,Ga)N PD three excellent characteristics, which ultrahigh UV/visible reject ratio, detectivity, and transmissivity, is proposed demonstrated successfully. By numerical simulations, it also found that cross‐sectional absorption...
The fast development of the brain-inspired neuromorphic computing system has ignited an urgent demand for artificial synapses with low power consumption. In this work, it is first time a light-stimulated low-power synaptic device based on single GaN nanowire been demonstrated successfully. such device, incident light, electrodes, and light-generated carriers play roles action potential, presynaptic/postsynaptic membrane, neurotransmitter in biological synapse, respectively. Compared to those...
Abstract Because of wide range applications, the flexible artificial synapse is an indispensable part for next-generation neural morphology computing. In this work, we demonstrate a synaptic device based on lift-off (In,Ga)N thin film successfully. The can mimic learning, forgetting, and relearning functions biological synapses at both flat bent states. Furthermore, simulate transition from short-term memory to long-term successfully under different bending conditions. With high flexibility,...
As the key device in a UV warning system, solid‐state photodetector has attracted great attention. Herein, new structure based on vertical (Al, Ga)N nanowires with graphene electrode and Si substrate is designed demonstrated. By graphene/vertical nanowire array heterojunction, rectifying characteristics of I – V curve are formed, dark current 54 nA at −2 bias. The fabricated exhibits responsivity 0.176 mA W −1 bias V, as well stable switching characteristic. It proposed that photogenerated...
Abstract Due to significant response contradictions, unidirectional carrier transmission of typical semiconductor p‐n junctions limits integrated sensors and artificial synapses in a monolithic device. In this work, bipolar junction designed by employing the hydrogel/p‐GaN local contact interface with p‐GaN/(In,Ga)N heterojunction, demonstrating bidirectional photocurrent sensor/artificial synapse dual‐mode device successfully. After modifying Au nanoparticles, negative (positive) is...
Underwater wireless optical communication (UWOC) is a technology using visible light to transmit data in an underwater environment, which has wide applications. Based on lift-off (In,Ga)N nanowires, this work proposed and successfully demonstrated self-powered photoelectrochemical (PEC) photodetector (PD) with excellent transmissivity. The transparent functionality of the PD critical for 360° omnidirectional detection, was realized by detaching nanowires from opaque epitaxial substrates...
The (Al,Ga)N nanowire film with good flexibility and transparency has been achieved by a electrochemical procedure low cost. Detaching such films can enhance the peak responsivity decrease decay time of ultraviolet photodetectors.
We propose and demonstrate a cost-effective facile electrochemical procedure to detach films with (In,Ga)N nanowires from the original Si substrate used for growth. Without ultraviolet illumination mechanical force, this lift-off process can be completed quickly within few seconds. The key element underlying mechanism is thin AlN layer, which acts both as buffer layer in epitaxial sacrificial etching process. Taking advantage of high selectivity over GaN, etched whereas only reactants remain...