With experimental and numerical simulation, we report the origin of performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study effect fluorination, using reactive-ion-etching process, devices are treated at various powers upto 60 W. It is observed, through X-ray photoelectron spectroscopy XRD measurements, that fluorination modifies defect/trap states channel SnO/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Chromium metal‐induced nanocrystallization of amorphous silicon (a‐Si) thin films is reported. The nanocrystalline nature these confirmed from X‐ray diffraction and Raman spectroscopy. Significantly, the deconvolution spectra reveals that were crystallized in a mixed phase cubic diamond wurzite structure as evidenced by lines at 512 496 cm −1 , respectively. crystallite sizes between 4 to 8 nm. Optical properties silicon, derived spectral transmittance curves, revealed high transmission...

The optical properties of nanocrystalline silicon (nc-Si), formed by nickel (Ni) induced crystallization amorphous (a-Si) films, are presented. Growth nc-Si was characterized Raman spectroscopy and UV–vis–NIR spectrophotometry. Significantly, the onset occurred at 600 °C within 15 min annealing, as evidenced from peak centered 514 cm−1. It is demonstrated that shape absorption spectrum a function thickness, substrate temperature, topological disorder metal content in films. Ni doping films...

Fabrication, physical modeling and dynamic response of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula> -type Al-doped SnO <sub xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> active channel thin film transistors (TFTs) are presented for the potential application ultra-high definition (UHD) displays. After deposition layer using reactive co-sputtering, was treated...

Pure amorphous silicon thin films have been deposited by ion beam sputtering onto borosilicate glass substrates at ambient temperature. Optical constants were derived from spectral transmittance measurements in the range of 350–2500 nm. All samples, regardless thickness, show a Raman peak centred between 460 and 480 cm−1. The root-mean-square variation bond angles, Δθ, obtained spectra, indicates presence relatively good short order films. refractive index 1.4 eV decreases 4.35 to 3.52 with...

The Internet of Things (IoT) brings new products to everyone improve daily life. Other newly created techniques, including Big Data, Cloud Services, and surveillance, can participate through these technological advances. In this study, the researchers look at four systems mentioned above identify their shared functions integrate them create useful potential applications. Despite limitations smart city concept, would seek innovative methods collect process sensor information within an...

From first principles, the electronic and optical properties of zb-AlP are calculated.Based on calculated band structure, within RPA approximation, complex dielectric function linear calculated.With a gap 1.54 eV, shows typical wide semiconductor like properties.The plasmon frequency ωp is found in ultraviolet region.

Using first‐principle calculations, a new compound semiconductor based on titanium (Ti) is predicted. It has been observed that Ti when alloyed with germanium (Ge) can crystallize in the zincblende symmetry, and exhibits semiconducting nature narrow bandgap. To test robustness of nature, structural properties electronic band structure have modeled using three different exchange–correlation functionals, namely, local density approximation, generalized gradient Perdew‐Burke‐Ernzerhof for...

First principle studies of electronic structure and magnetic properties binary alloy Fe2Ge are presented. We have observed the increase total moment per unit cell with lattice dilation. The underlying cause for this increased moments is explained in terms structure. found that dilation has facilitated band filling especially majority spin resulting increasing moment. Later, we reasoned out interaction between Fe non-magnetic germanium atoms responsible Fe2Ge. From current studies, insight...