Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation B. V. Olson, E. A. Shaner, J. K. Kim, F. Klem, S. D. Hawkins, L. M. Murray, P. Prineas, Flatté, T. Boggess; Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy InAs/InAsSb superlattice. Appl. Phys. Lett. 27 August 2012; 101 (9): 092109....

Minority carrier lifetimes in doped and undoped mid-wave infrared InAs/InAsSb type-II superlattices (T2SLs) InAsSb alloys were measured from 77–300 K. The analyzed using Shockley-Read-Hall (SRH), radiative, Auger recombination, allowing the contributions of various recombination mechanisms to be distinguished dominant identified. For T2SLs, SRH is mechanism. Defect levels with energies 130 meV 70 are determined for respectively. alloy limited by radiative through entire temperature range,...

Measurements of carrier recombination rates using a time-resolved pump-probe technique are reported for mid-wave infrared InAs/InAs1−xSbx type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, 16 K band-gap ≃235 ± 10 meV was achieved all five unintentionally doped T2SLs. Carrier lifetimes were determined by fitting rate equation model to density dependent data. Minority as long μs measured. On other hand, Auger InAs/InAsSb T2SLs significantly larger than those...

We report significantly enhanced device performance in long wavelength interband cascade lasers (ICLs) by employing a recently proposed innovative quantum well (QW) active region containing strained InAsP layers. These ICLs were able to operate at wavelengths near 14.4 μm, the longest ever demonstrated for III–V lasers, implying great potential of cover an even wider range. Also, applying aforesaid QW configuration on relatively short wavelengths, low threshold current density (e.g., 13...

Abstract Interband cascade lasers (ICLs) are becoming desirable mid-infrared semiconductor laser sources particularly in the 3-6 µm wavelength range due to their low power consumption. In this work, we report demonstration of room temperature (RT) ICLs based on hybrid-cladding layers and a modified type-II quantum well (QW) active region with an emission near 7.7 µm, longest ever reported for RT ICLs. By investigating two ICL wafers different structural qualities strains, show correlation...

A judicious choice of material heterostructure could spur a breakthrough in infrared photodetector technology, for diverse uses astronomy, medicine, and industry. Unfortunately, this system little is known about the nonequilibrium charge-carrier dynamics, which critical to device performance. This study outlines an approach uniquely determine magnitudes various recombination mechanisms that carrier lifetime, ultimately limitations dark currents.

We examined the spectral responsivity of a 1.77 μm thick type-II superlattice based long-wave infrared detector in combination with metallic nanoantennas. Coupling between Fabry-Pérot cavity formed by semiconductor layer and resonant nanoantennas on its surface enables selectivity, while also increasing peak quantum efficiency to over 50%. Electromagnetic simulations reveal that this high is direct result field-enhancement absorber layer, enabling significant absorption spite absorber's...

The effect of majority carrier concentration and minority lifetime on the performance mid-wave infrared ( λ cutoff = 5.5 μ m ) nBn detectors with variably doped InGaAs/InAsSb type-II superlattice absorbers is investigated. detector layer structures are grown by molecular beam epitaxy such that their absorbing layers either undoped, uniformly a target density 4 × 1015 cm−3, or graded profile, variable-area mesa arrays fabricated. Each material's temperature-dependent determined time-resolved...

We demonstrate InGaAs photodiodes with an epitaxial heterostructure that allows simple mesa isolation of individual devices low dark current and high responsivity. An undoped InAlAs barrier passivation layer enables detectors without exposing the active region, while simultaneously reducing electron diffusion current. Photodetectors sizes as small 25×25 μm2 exhibit densities 10 nA/cm2 at 295 K responsivities 0.62 A/W 1550 nm.

The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier and consequently fundamental limitations to their performance. Here, recombination characterized in long-wave InAs/InAsSb type-II superlattice. coefficients small 7.1×10−26 cm6/s are experimentally measured using data at temperatures range of 20 K–80 K. compared Auger-1 predicted 14-band K·p electronic structure model calculated HgCdTe same bandgap....

We report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting 10- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$12~\mu \text{m}$ </tex-math></inline-formula> region. Modifications in hole injector have improved carrier transport these ICLs, resulting significantly reduced threshold...

We have fabricated mid-wave infrared photodetectors containing InAsSb absorber regions and AlAsSb barriers in n-barrier-n (nBn) n-barrier-p (nBp) configurations, characterized them by current-voltage, photocurrent, capacitance-voltage measurements the 100-200 K temperature range. Efficient collection of photocurrent nBn structure requires application a small reverse bias resulting minimum dark current, while nBp devices high responsivity at zero bias. When biasing both types for equal...

A time- and temperature-dependent differential-transmission technique is used to study the bandgap dependence of Auger recombination in Ga-free InAs/InAsSb type-II superlattices (T2SLs). The energies are varied between 290 meV (4.3 μm) 135 (9.2 by engineering layer thickness alloy Sb concentration. long-wave infrared structure with energy found have an coefficient 9 × 10−26 cm6/s at 77 K. measured coefficients increase decreasing from approximately 3 10−27 for mid-wave bandgaps 2 10−25 T2SL...

InAs${}_{1-x}$Sb${}_{x}$ type-II superlattices (T2SLs) are of significant interest for next-generation infrared photodetectors, due to their long minority-carrier lifetime. However, little is known about hole transport along the growth axis, direction photocurrent flow. This study presents quantitative measurements vertical in band-engineered T2SL transistors, which turns out be strikingly similar electronic disordered bulk semiconductors like amorphous silicon. These results carry...

InAs-based interband cascade lasers (ICLs) can be more easily adapted toward long wavelength operation than their GaSb counterparts. Devices made from two recent ICL wafers with an advanced waveguide structure are reported, which demonstrate improved device performance in terms of reduced threshold current densities for ICLs near 11 μm or extended operating beyond 13 μm. The yielded a significantly continuous wave (cw) lasing 23 A/cm2 at 80 K substantially increased cw output power, compared...

We report the demonstration of continuous-wave interband cascade lasers (ICLs) near 13 μm. The attained lasing wavelength 13.2 μm at 92 K stands as longest cw emission ever reported for III-V lasers. This achievement is attributed to adoption an innovative quantum well (QW) active region comprising strained InAs0.5P0.5 layers in contrast commonly used “W” QW region, showing potential modified with InAsP improving device performance and extending coverage ICLs.

GaInAsSbBi alloys are grown lattice-matched on GaSb by molecular beam epitaxy demonstrating smooth surface morphologies, &amp;gt;5 μm wavelength photoluminescence emission, and minority carrier lifetimes &amp;gt;1 μs. At a growth temperature of 400 °C, the Ga flux is systematically increased Bi decreased to identify conditions that yield droplet-free morphologies. The lifetime evaluated using time-resolved photoluminescence, where it observed samples exhibit comparable their Bi-free GaInAsSb...

The minority carrier lifetime (τMC) and equilibrium electron concentration (i.e., the doping level, n0) are both important values that directly determine diffusion current in infrared photodetectors utilizing n-type absorbing regions. Here, time-resolved microwave reflectance measurements used to non-destructively measure of these mid-wave InAs/InAs1−xSbx type-II superlattices with varying levels between 2×1014 cm−3 2×1016 cm−3. measured data analyzed using recombination theory level ranges...

We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition InAs/GaSb double quantum wells from normal inverted state. show that owing low carrier density our samples (approaching intrinsic limit), magneto-absorption spectra evolve single cyclotron resonance peak in state multiple absorption peaks with distinct magnetic field dependence. Using an eight-band Pidgeon-Brown model, we explain all major observed experiment. demonstrate can be realized by...

Temperature-dependent measurements of carrier recombination rates using a time-resolved optical pump-probe technique are reported for mid-wave infrared InAs/InAs1−xSbx type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, 16 K band-gap ∼235 ± 10 meV was achieved five unintentionally four intentionally doped T2SLs. Carrier lifetimes were determined by fitting lifetime models based on Shockley-Read-Hall (SRH), radiative, Auger processes to temperature excess...