Herbert De Pauw

ORCID: 0000-0002-4767-8762
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About
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Research Areas
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor Lasers and Optical Devices
  • Innovative Energy Harvesting Technologies
  • Analog and Mixed-Signal Circuit Design
  • Advanced DC-DC Converters
  • Wireless Power Transfer Systems
  • Energy Harvesting in Wireless Networks
  • Multilevel Inverters and Converters
  • Semiconductor materials and devices
  • Laser Material Processing Techniques
  • 3D IC and TSV technologies
  • Additive Manufacturing and 3D Printing Technologies
  • Advanced MEMS and NEMS Technologies
  • Advanced Power Amplifier Design
  • Electrostatic Discharge in Electronics
  • Optical Coatings and Gratings
  • Radio Frequency Integrated Circuit Design
  • GaN-based semiconductor devices and materials
  • Advanced Sensor and Energy Harvesting Materials
  • Photonic and Optical Devices
  • Advanced Surface Polishing Techniques
  • Mechanical and Optical Resonators
  • Electromagnetic Compatibility and Noise Suppression
  • Advancements in PLL and VCO Technologies
  • Thin-Film Transistor Technologies

Ghent University
2006-2025

Imec the Netherlands
2019-2023

IMEC
2007-2009

The integration of electronics into textiles has gained considerable attention in recent years, due to the development and high demand wearable flexible electronics. One promising fields is healthcare, which often involves utilization textile-based electrodes. These electrodes offer advantages such as conformability, breathability, comfort. This article presents 3D-formed together with a narrow fabric-based interconnect system. study showcases methods materials for fabrication system,...

10.3390/s25020414 article EN cc-by Sensors 2025-01-12

Sensitivity to supply voltage, temperature and process variations of a number current reference topologies novel circuit is compared in ON Semi I3T80 technology. The shows the lowest dependency, while dependency remain acceptably low.

10.1109/mwscas.2009.5236154 article EN 2009-08-01

This paper proposes an automated approach for the optimization of number active segments in switching DC-DC converters with a segmented power stage. The drain-source voltage MOSFET is used to estimate load current, and segment controller activates optimized segments. Using this automatically balances loss conduction converter over range. proposed concept implemented prototype discrete 500 kHz boost converter, which confirms efficiency Potential applications include high converters, where...

10.1109/mixdes.2014.6872227 article EN 2014-06-01

4-phase 2-branch and 16-phase 8-branch charge pumps are proposed to decrease the power dissipation due parasitic capacitance. By using recycling concept, efficiency is increased about 55% 88% respectively compared a traditional Dickson pump. The multi-branch can also significantly reduce output voltage ripple.

10.1109/edssc.2019.8753947 article EN 2019-06-01

A new high-voltage driver, originally designed for an 800×600 passive matrix AFLC display application, is integrated in a 0.35μm CMOS technology. The IC features 65V driving capability on all 300 outputs and able of generating kinds complex waveforms that are constituted out 8 voltage levels (7 ground).

10.1889/1.2433510 article EN SID Symposium Digest of Technical Papers 2006-01-01

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This paper describes the theory behind “coil-enhancement” principle: The impedance of an inductor is made controllable as a function frequency by means transconductance <formula formulatype="inline"> <tex Notation="TeX">${g}_{m} ({s})$</tex></formula> that located in feedback loop. In order to show potential coil-enhancement circuit, effect several basic functions onto synthesized presented....

10.1109/tcsi.2009.2023938 article EN IEEE Transactions on Circuits and Systems I Regular Papers 2009-06-02

In a monolithically integrated GaN-IC, the parasitic inductance, capacitance and resistance between driver half-bridge is greatly reduced. GaN-IC platform on SOI combined with oxide filled deep trench isolation, back-gating effect high-side power device eliminated. Yet some issues related to epitaxial stack substrate contact layer need be addressed. this paper, network concept presented for 200V p-GaN gate HEMTs SOI, impact of operation investigated through modeling as parallel R-C network....

10.1109/cas59036.2023.10303677 article EN 2023-10-11

A newly developed `integrated services digital network' (ISDN) splitter with bandstop (BS) topology is presented and compared to an actual ISDN a traditional low-pass (LP) topology. The LP-to-BS change reduced the amount of filter stages: LP requires 8 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> order elliptic-like in be compliant standard `TS 101 952-1-4 V1.1.1' [1] European Telecommunications Standards Institute (ETSI), whereas BS...

10.1109/apccas.2010.5774953 article EN 2010-12-01

Helmet-mounted miniature information display (HEMIND) is an IST EU project whose main purpose to design, prototype and manufacture a helmet-mounted system for firefighters. The has been made of high resolution, miniature, see-through, monochrome display. An autonomous, portable, computer present images overlapped with the normal viewing field user. can be video (thermal images, standard images) as well data from sensors integrated in clothes user or received through radio-communication...

10.1109/sced.2007.384044 article EN Spanish Conference on Electron Devices 2007-01-01

A 16-phase 8-branch charge pump with finger boost capacitor is proposed to increase the power efficiency. Compared standard capacitor, can significantly reduce parasitic capacitance. The four-stage achieve 14.2 V output voltage from a 3 supply. efficiency of 60.5% and save chip area as well.

10.1051/matecconf/201929201020 article EN cc-by MATEC Web of Conferences 2019-01-01

A fully integrated 16-phase 8-branch Dickson charge pump is proposed and implemented to decrease the power dissipation due parasitic capacitance at bottom plate of boost capacitor. By using recycling concept, 87% consumption related saved. In a 4-stage version this pump, maximum efficiency 41% achieved 35µA output current 11V voltage from 3.3V supply voltage. The multi-branch can also reach very low ripple only 0.146% load resistance 1MΩ, which attributed fact that transfer charges node...

10.1587/transele.2019ecp5029 article EN IEICE Transactions on Electronics 2019-11-28

An ongoing trend in packaging technology is the introduction of optical interconnections to cope with problems increased data transmission speed and raised interconnection density. Hence, improving technologies only viable if aspects interfaces opto-electronic (O/E) components are considered. In this paper, we will demonstrate an MCM-D O/E features. We achieved integrate high-precision V-grooves for alignment fixation fibers into a standard technology. The V-groove shape fiber structures...

10.1115/ipack2003-35192 article EN 2003 International Electronic Packaging Technical Conference and Exhibition, Volume 1 2003-01-01
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