A5042278491- Semiconductor materials and interfaces
- ZnO doping and properties
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Advancements in Semiconductor Devices and Circuit Design
- Graphene research and applications
- Gas Sensing Nanomaterials and Sensors
- Silicon and Solar Cell Technologies
Xi'an University of Technology
2019
Shaanxi University of Technology
2019
Xi’an University
2019
Abstract Through the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating B-ZnO/PET/GR Schottky contact. The ZnO NRs exhibited well-defined hexagonal structure with lattice constant size of approximately 0.502 nm, as evidenced by characterization results. X-ray Photoelectron Spectroscopy (XPS) analysis revealed reduction in defective oxygen content increasing B ion...
Abstract The Al-Zr-ZnO films was deposited on the surface of n-Si (111) by sol-gel method. results showed that average grain size decreases due to ion doping concentration. Based XPS analysis, defect oxygen decreases. As for graphene/ schottky contact, barrier height increased and ideality factor decreased with increasing Al or Zr doping, indicating rectifying characteristics graphene/Al-Zr-ZnO contacts enhanced co-doping. It can be explained vacancies weakens Fermi level pinning.