A5076594527- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Organic Light-Emitting Diodes Research
- Ga2O3 and related materials
- Nanocluster Synthesis and Applications
- Gold and Silver Nanoparticles Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Advancements in Photolithography Techniques
- Electron and X-Ray Spectroscopy Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Conducting polymers and applications
- Carbon and Quantum Dots Applications
- Advanced Photocatalysis Techniques
- Molecular Junctions and Nanostructures
- Plasmonic and Surface Plasmon Research
- Solid-state spectroscopy and crystallography
- Analytical Chemistry and Sensors
- Luminescence and Fluorescent Materials
- Graphene research and applications
- Diamond and Carbon-based Materials Research
- Laser Design and Applications
Nanjing University of Information Science and Technology
2019-2025
Southeast University
2012-2020
Nanjing Library
2020
Texas A&M University
1998
Quantum dot (QD) light-emitting diodes (LEDs) are a promising candidate for high-efficiency, color-saturated displays. This work reports on the size effect of sol–gel synthesized ZnO nanoparticles (NPs) in which sizes 2.9, 4.0, and 5.5 nm, were used as an electron transfer layer QLEDs. The NPs was estimated by transmission microscopy (TEM) its QLED performance investigated photoluminescence decay lifetime mobility NPs. It found that NP decreased from to 2.9 conductivity increased, whereby...
We report an inverted and multilayer quantum dot light emitting diode (QLED) which boosts high efficiency by tuning the energy band alignment between charge transport layers. The electron layer (ETL) was ZnO nanoparticles (NPs) with optimized doping concentration of cesium azide (CsN3) to effectively reduce flow balance injection. This is virtue a 0.27 eV upshift ETL's conduction edge, inhibits quenching excitons preserves superior emissive properties dots due insulating characteristics...
A highly efficient solution-processed QLED device with a doped HTL has been demonstrated by the modulation of hole transport.
Surface plasmon-enhanced electroluminescence (EL) has been demonstrated by incorporating gold (Au) nanoparticles (NPs) in quantum dot light-emitting diode (QLED). Time-resolved photoluminescence (TRPL) spectroscopy reveals that the EL enhancement is ascribed to near-field through an effective coupling between excitons of emitters and localized surface plasmons around Au NPs. It found size NPs distance emissive layer have significant effects on performance QLED. The can be maximized as SP...
A highly efficient QLED achieving white emission at a low driving voltage is obtained by employing Zn<sub>0.95</sub>Mg<sub>0.05</sub>O as the electron transport layer.
Abstract All inorganic perovskite quantum dots (ABX 3 , A = Cs, B Pb, X Cl, Br, or I) are potential candidates for wide‐color‐gamut display applications. High‐efficiency green and red dot (PeQD) light‐emitting diodes (LEDs) have been achieved, however, development of blue‐emitting devices, especially those with the relatively short wavelengths (<470 nm) meeting National Television System Committee blue standard, lag largely behind, mainly due to poor film quality, low photoluminescence...
Here, we report on the hybrid hole transport materials 4,4'-bis-(carbazole-9-yl)biphenyl (CBP) or poly-N-vinylcarbazole (PVK) doped into poly(4-butyl-phenyl-diphenyl-amine) (Poly-TPD) as layer (HTL) to tailor energy band alignment between injection (HIL) and quantum dot (QD) light emitting in order realize efficient diodes (QLEDs) all solution-processed fabrication. Compared pristine Poly-TPD based device, it is found that electroluminescence (EL) performance of QLEDs can be significantly...
High performance, mechanically flexible quantum dot light emitting diodes (QLEDs) based on ZnO nanoparticles used as an electron transfer layer (ETL) are reported.
Photon management strategies are crucial to improve the efficiency of perovskite thin film (PTF) solar cell. In this work, a nano-cone (NC) based 2D photonic nanostructure is designed and simulated aiming at achieve superior light trapping performance by introducing strong scattering interferences within active layer. Compared planar PTF cell, NC nanostructured device with 45 degrees half apex angle obtains highest short-circuit current density, which improved over 20% from 15.00 mA/cm
Abstract Highly efficient green and red perovskite quantum dots (PeQDs) light‐emitting diodes (PeQDLEDs) have been achieved. However, blue PeQDLEDs, especially those with the relatively short wavelengths (<470 nm) meeting National Television System Committee standard, struggled to match high efficiency stability of their counterparts. The main critical problems are low photoluminescence yield (PLQY) poor PeQDs, as well unfavorable device structure. Herein, a strategy codoping Mn 2+ Ni in...
In this paper, a photo-modulated transistor based on the thin-film structure was fabricated flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots reduced graphene oxide (RGO) fragment-decorated ZnO nanowires synthesized to overcome narrow optical sensitive waveband enhance photo-responsivity. Due enrichment interface heterostructure RGO fragments being utilized, photo-responsivity improved 2000 W−1 photo-sensitive wavelength...
A synergistic engineering strategy of improved charge transport and facile post-passivation enhances the performance inverted perovskite QD light-emitting diodes.
In this paper, we have synthesized ZnCdSeS quantum dots (QDs)-gold nanoparticle (Au NPs) hybrids in aqueous solution via bi-functional linker mercaptoacetic acid (MPA). The absorption peaks of QDs and Au are both located at 520 nm. It is investigated that PL intensity QD-Au hybrid can be affected by the amounts pH value solution. surface plasmon resonance (LSPR) effect NPs has been demonstrated increased fluorescence intensity. phenomenon enhancement maximized under optimized 8.5....
Quantum dots (QDs) light-emitting diodes (QLEDs) are considered the most promising candidate for application in displays. While efficiency of QLEDs has been greatly developed recent years and is comparable to that organic (OLEDs), it still remains challenging realize both high long lifetimes. In this work, we report efficient stable red with maximum current 13.48 cd A–1, external quantum 18.65%, low roll-off at luminance a lifetime exceeding ∼2.9 × 105 h, representing 3-fold increase...
Zero-dimension (0-D) lead halide perovskite nanocrystals (NCs) have attracted a sight of interest in the field optoelectronic devices due to their outstanding properties, such as high photoluminescence quantum yield (PLQY) and size- composition-controlled tunable emission wavelengths. However, toxicity (Pb) element NCs is bottleneck for commercial application NCs. Herein, we report facile ligand-assisted synthesis achieve lead-free Cs 3 Cu 2 Cl 5 with PLQY ∼70% good stability against...
A PVP-assisted method regulates the crystal growth of Cs 3 Cu 2 I 5 films for flexible solar-blind photodetectors.
We demonstrate a quantum dot capped gold nanoparticle composite as an emitting layer in light-emitting diodes to achieve enhanced efficiency.
All-inorganic quantum dot light-emitting diodes (QLEDs) show promise for advanced lighting and display due to their superior advantage in stability. However, all-inorganic QLEDs suffer from low efficiency because of the exciton quenching inefficient hole transport inorganic layer (HTL) QDs. Herein, we demonstrate an efficient QLED with NiO nanoparticles (NPs) HTL modified by 11-mercaptoundecanoic acid (MUA). The MUA can passivate defects suppress quenching. Moreover, declined valence band...
Solar-blind photodetectors have attracted great attention in the past few years due to their widespread application military and civilian field. Herein, we demonstrate a highly stable sensitive solar-blind photodetector based on lead-free CsCu2I3 crystalline film derived by facile solution method. The high quality films with dense morphology crystallinity are acquired optimizing crystallization process of films. exhibits solar-blind/ UVA rejection ratio 102 cutoff wavelength located at 303...
Colloidal quantum dots (QDs) with a ZnO core were synthesized subsequent surface passivation by MgO. The photo-enhancement effect of the near band-edge photoluminescence (PL) in nanocrystals, dispersed ethanol, is investigated observing changes optical properties after ultraviolet (UV) exposure. Finally, operation as light-emitting device (LED) was demonstrated experimentally for these ZnO-based (QDs). results indicate that this type QDs might enable development electroluminescent UV sources future.
We report a color‐saturated, red quantum dot light‐emitting diode (QD‐LED) using graphene oxide doped PEDOT:PSS (PEDOT‐GO) as the hole injection layer (HTL) to optimize band offset between HTL and emitting layers. As doping concentration of GO increases, valence PEDOT‐GO down‐shifts by 0.66 eV approaching that QDs. Meanwhile, conductivity transparency linearly changes increases. The QD‐LEDs show maximum luminance up 4200 cd/m 2 , corresponding 7.5 lm/W in power efficiency turn‐on voltage 1.6...
The quantum dot light-emitting diode (QLED) is a promising candidate for the display and lighting applications. fabrication of such devices by solution processing allows considerable cost reduction therefore very attractive industrial manufacturers. In this paper, we report on all solution-processed inverted QLEDs incorporating with solvent modified PEDOT:PSS. effect isopropanol (IPA) doping concentration in PEDOT:PSS hole injection layer (HIL) device performance was investigated, aim...
Upconversion devices (UCDs) have motivated tremendous research interest with their excellent potential and promising application in photovoltaic sensors, semiconductor wafer detection, biomedicine, light conversion devices, especially near-infrared-(NIR)-to-visible upconversion devices. In this research, a UCD that directly turned NIR located at 1050 nm into visible 530 was fabricated to investigate the underlying working mechanism of UCDs. The simulation experimental results proved...