A5078132551- Semiconductor Quantum Structures and Devices
- Silicon Nanostructures and Photoluminescence
- Quantum and electron transport phenomena
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Thin-Film Transistor Technologies
- Atomic and Subatomic Physics Research
- Quantum optics and atomic interactions
- Mechanical and Optical Resonators
- Quantum Dots Synthesis And Properties
- Advanced NMR Techniques and Applications
- Quantum Information and Cryptography
- Ion-surface interactions and analysis
- Solid-state spectroscopy and crystallography
- Nanowire Synthesis and Applications
- Electron and X-Ray Spectroscopy Techniques
- Fullerene Chemistry and Applications
- Chalcogenide Semiconductor Thin Films
- Molecular Junctions and Nanostructures
- Quantum Computing Algorithms and Architecture
- Diamond and Carbon-based Materials Research
Simon Fraser University
2014-2024
InfoConsult (Germany)
2010
Leibniz Institute for Crystal Growth
2010
University of British Columbia
1974-1994
Dalhousie University
1993
University of California, Berkeley
1992
IBM (United States)
1980
IBM Research - Thomas J. Watson Research Center
1980
Since the end of cold war, macroscopic amounts separated stable isotopes most elements have been available ``off shelf'' at affordable prices. Using these materials, single crystals many semiconductors grown and dependence their physical properties on isotopic composition has investigated. The conspicuous effects observed to do with phonon frequencies linewidths composition. These affect electronic solids through mechanism electron-phonon interaction, in particular, corresponding optical...
Abstract The encoding of qubits in semiconductor spin carriers has been recognized as a promising approach to commercial quantum computer that can be lithographically produced and integrated at scale 1–10 . However, the operation large number required for advantageous applications 11–13 will produce thermal load exceeding available cooling power cryostats millikelvin temperatures. As scale-up accelerates, it becomes imperative establish fault-tolerant above 1 K, which is orders magnitude...
We report the first well-resolved band-edge luminescence from excitons confined in fully strained SiGe quantum wells grown on Si. At liquid-He temperatures photoluminescence is due to shallow bound excitons, and addition a no-phonon line, phonon-assisted transitions involving TA phonons Si-Si, Si-Ge, Ge-Ge TO are observed higher spectra dominated by free-exciton luminescence. Quantum-confinement effects shift edge above bulk band-gap energy, also influence relative intensities of three...
Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim the identification of suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In work, alongside its sister publication, we report upon T center, silicon defect with spin-selective transitions at 1326 nm in telecommunications O-band. Here show that center $^{28}$Si...
Donor spins in silicon are highly competitive qubits for upcoming quantum technologies, offering complementary metal-oxide semiconductor compatibility, coherence (T2) times of minutes to hours, and simultaneous initialization, manipulation, readout fidelities near ~99.9%. This allows many error correction protocols, which will be essential scale-up. However, a proven method reliably coupling spatially separated donor has yet identified. We present scalable silicon-based platform using the...
Abstract Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems. Solid-state platforms are particularly exposed to errors arising from materials-induced variability qubits, which leads inconsistencies. Here we study in a spin qubit processor, tying them their physical origins. We use this knowledge demonstrate consistent and repeatable operation with above 99% fidelity two-qubit gates technologically important silicon...
The performance of modular, networked quantum technologies will be strongly dependent upon the quality their light-matter interconnects. Solid-state colour centres, and in particular T centres silicon, offer competitive technological commercial advantages as basis for networking distributed computing. These newly rediscovered silicon defects direct telecommunications-band photonic emission, long-lived electron nuclear spin qubits, proven native integration into industry-standard,...
Pseudomorphic Si1−x−yGexCy alloy layers on Si (100) with band-edge photoluminescence and without defect-related luminescence have been achieved. The was measured from 2 to 77 K used make a direct measurement of the band gap shift as function strain reduction C added. Compared effect just reducing Ge content, results show that is added, reduced more efficiently than increased. Furthermore, imply fully strain-compensated layer would much less Si, suggest initial incorporation reduces relaxed,...
The production of refractive-index gratings by photoexcitation electrons from traps followed drift or diffusion and then retrapping is treated without the assumption made Amodei that migration length small compared to grating wavelength. It shown efficiency hologram writing increases with increasing up a certain limit. spatial shift between light-intensity pattern which produces it different according whether operative only for short lengths.
Luminescence and optical absorption due to radiation damage centers in silicon has been studied exhaustively for decades, but is receiving new interest applications as emitters integrated photonic technologies. While a variety of other transitions have found be much sharper enriched $^{28}$Si than natural Si, the elimination inhomogeneous isotopic broadening, this not yet investigated centers. We report results well-known G, W C highly $^{28}$Si, with linewidth improvements some cases over...
Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over past half century deliver large-scale quantum processors. Despite scalability advantage of using technology, realising a computer with millions required run some most demanding algorithms poses several outstanding challenges, including how control so many simultaneously. Recently, compact 3D microwave dielectric resonators were proposed as way magnetic fields for qubit across...
A number of recent electrical transport studies have shown that low-temperature treatment in plasmas containing atomic H can neutralize acceptors Si. We studied this process by monitoring the bound exciton luminescence associated with implanted acceptor impurities B, In, and Tl. Treatment an plasma was found to substantially reduce while leaving unchanged lines due donor, As, thus verifying conclusions studies.
We resolve the remarkably sharp bound exciton transitions of highly enriched $^{28}\mathrm{Si}$ using a single-frequency laser and photoluminescence excitation spectroscopy, as well photocurrent spectroscopy. Well-resolved doublets in spectrum $^{31}\mathrm{P}$ donor reflect hyperfine coupling electronic nuclear spins. The optical detection spin state, selective pumping ionization donors specific states, suggests number new possibilities which could be useful for realization silicon-based...
We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear contrast quadratic dependence predicted by valley repopulation model (VRM), therefore orders magnitude greater than that VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding first principles calculations we find these arise from a tuning hyperfine interaction term hydrostatic component strain achieve semi-quantitative...
We report the first high resolution photoluminescence studies of isotopically pure Si (99.896% (28)Si). New information is obtained on isotopic effects indirect band gap energy, phonon energies, and broadenings, which in good agreement with calculations previous results Ge diamond. Remarkably, linewidths no-phonon boron phosphorus bound exciton transitions (28)Si sample are much narrower than natural not well resolved at our maximum instrumental approximately 0.014 cm(-1). The removal...
We report the first room-temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells. The is due to band-edge carrier recombination, and its intensity increases linearly with forward current up 1700 A/cm2. internal efficiency estimated have a lower limit of 2×10−4. As temperature increased 77 300 K, luminescence silicon relative that Si1−xGex A minimum band offset required effective
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTAntenna organization in green photosynthetic bacteria. 2. Excitation transfer detached and membrane-bound chlorosomes from Chloroflexus aurantiacusDaniel C. Brune, George H. King, Andrew Infosino, Thomas Steiner, Michael L. W. Thewalt, Robert E. BlankenshipCite this: Biochemistry 1987, 26, 8652–8658Publication Date (Print):December 1, 1987Publication History Published online1 May 2002Published inissue 1 December...
Detailed conductivity measurements on cis-${(\mathrm{CH})}_{x}$ doped with As${\mathrm{F}}_{5}$ as a function of electric field for various temperatures are reported. For concentrations well below the semiconductor to metal transition, an exponential dependence resistance reciprocal is observed. This result consistent model metallic domains embedded in dielectric. It their charging energy which determines both temperature and conductivity. Non-Ohmic effects above transition also discussed.
Deep luminescence centers in Si associated with transition metals have been studied for decades, both as markers these deleterious contaminants, well the possibility of efficient Si-based light emission. They are among most ubiquitous observed Si, and served testbeds elucidating physics isoelectronic bound excitons, testing ab-initio calculations defect properties. The greatly improved spectral resolution resulting from elimination inhomogeneous isotope broadening recently available highly...