A5010857702- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electronic and Structural Properties of Oxides
- Neuroscience and Neural Engineering
- Transition Metal Oxide Nanomaterials
- Integrated Circuits and Semiconductor Failure Analysis
- CCD and CMOS Imaging Sensors
- Machine Learning and ELM
- Neural Networks and Reservoir Computing
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- Magnetic and transport properties of perovskites and related materials
- MXene and MAX Phase Materials
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- 2D Materials and Applications
- Physics of Superconductivity and Magnetism
- Thin-Film Transistor Technologies
- Phase-change materials and chalcogenides
- Metamaterials and Metasurfaces Applications
- Quantum and electron transport phenomena
- Graphene research and applications
- Neural dynamics and brain function
Peking University
2016-2025
Beijing Advanced Sciences and Innovation Center
2023-2025
Xinzhou Teachers University
2025
North University of China
2022-2024
Inha University
2024
Semiconductor Manufacturing International (China)
2023
Institute of Microelectronics
2013-2022
National Center for Nanoscience and Technology
2018-2019
King University
2012
Ministry of Education of the People's Republic of China
2009
Abstract Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for fabrication electronic devices, with nonvolatile memories being those that have received most attention. The presence and quality RS phenomenon in system can be studied using different prototype cells, performing experiments, displaying figures merit, developing computational analyses. Therefore, real usefulness impact findings...
Neuromorphic computing is an emerging paradigm beyond the conventional digital von Neumann computation. An oxide-based resistive switching memory engineered to emulate synaptic devices. At device level, gradual resistance modulation characterized by hundreds of identical pulses, achieving a low energy consumption less than 1 pJ per spike. Furthermore, stochastic compact model developed quantify dynamics and variation. system performance artificial visual on image orientation or edge...
The characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt-based resistance random access memory devices with stable reproducible nanosecond bipolar switching behavior were studied. dependencies on cell area, operating temperature, frequency indicate that the conduction low-resistance states is due to electrons hopping through filament paths. We also identify set essentially equivalent a soft dielectric breakdown associated polarization effect caused by migration space charges...
The three-dimensional (3D) cross-point array architecture is attractive for future ultra-high-density nonvolatile memory application. A bit-cost-effective technology path toward the 3D integration that requires only one critical lithography step or mask reducing bit-cost demonstrated in this work. double-layer HfOx-based vertical resistive switching random access (RRAM) fabricated and characterized. HfOx thin film deposited at sidewall of predefined trench by atomic layer deposition, forming...
Resistance switching (RS) devices have potential to offer computing and memory function. A new computer unit is built of RS array, where processing storing information occur on same devices. states stored in located arbitrary positions array can be performed various nonvolatile logic operations. Logic functions reconfigured by altering trigger signals.
The exponential growth of various complex images is putting tremendous pressure on storage systems. Here, we propose a memristor-based system with an integrated near-storage in-memory computing-based convolutional autoencoder compression network to boost the energy efficiency and speed image compression/retrieval improve density. We adopt 4-bit memristor arrays experimentally demonstrate functions system. step-by-step quantization aware training scheme equivalent transformation for transpose...
We report the use of metal oxide resistive switching memory (RRAM) as synaptic devices for a neuromorphic visual system. At device level, we experimentally characterized gradual resistance modulation RRAM by hundreds identical pulses. As compared with phase change (PCM) reported recently in [1,2], >100×-1000× energy consumption reduction was achieved (<;1 pJ per spike). Based on experimental results, developed stochastic model to quantify dynamics. system simulated performance image...
An implantation doping approach is implemented to fabricate Gd-doped HfO2 resistive random access memory (RRAM) devices. The significantly enhanced performances are achieved in the RRAM devices including improved uniformity of switching parameters, enlarged ON/OFF ratio, and increased speed without obvious reliability degradation. This performance improvement clarified suppressed randomicity oxygen vacancy filaments’ formation reduced ion migration barrier induced by trivalent Gd-doping...
Resistive switching (RS) phenomenon in the HfO2 dielectric has been indirectly observed at device level previous studies using metal-insulator-metal structures, but its origin remains unclear. In this work, enhanced conductive atomic force microscope (ECAFM), we have able to obtain situ direct observation of RS with nanometric resolution. The ECAFM measurements reveal that filaments exhibiting are primarily formed grain boundaries, which were shown especially low breakdown voltage due their...
Neuromorphic computing is an attractive computation paradigm that complements the von Neumann architecture. The salient features of neuromorphic are massive parallelism, adaptivity to complex input information, and tolerance errors. As one most crucial components in a system, electronic synapse requires high device integration density low-energy consumption. Oxide-based resistive switching devices have been shown be promising candidate realize functions synapse. However, intrinsic variation...
A unified model is proposed to elucidate the resistive switching behavior of metal-oxide-based random access memory devices using concept electron hopping transport along filamentary conducting paths in dielectric layer. The calculation shows that a low-electron-occupied region conductive filament (CF) formed when critical electric field applied. oxygen vacancies this are recombined with ions, resulting rupture CFs. mechanism was verified by experiments and theoretical calculations. In...
Oxygen vacancy (VO) plays the critical role for resistive switching in transition metal oxide random access memory (RRAM). First principles calculation is performed to study impact of metallic ion (Al, Ti, or La) doping ZrO2 on behaviors VO, including defect energy level and formation (Evf). Trivalent dopant (Al significantly reduces Evf. Based calculated results, ZrO2-based RRAM devices are designed control improved uniformity demonstrated experiments.
The resistive random access memory (RRAM) crossbar array has been extensively studied as one of the most promising candidates for future high-density nonvolatile technology. However, some problems caused by circuit and device interaction, such sneak leakage paths, result in limited size large power consumption, which degrade performance significantly. Thus, analysis on interaction issue is imperative. In this paper, a simulation method developed to investigate critical issues correlated with...
Resistive switching processes in HfO2 are studied by electron holography and situ energy-filtered imaging. The results show that oxygen vacancies gradually generated the oxide layer under ramped electrical bias, finally form several conductive channels connecting two electrodes. It also shows process occurs at top interface of hafnia layer. As a service to our authors readers, this journal provides supporting information supplied authors. Such materials peer reviewed may be re-organized for...
We report, for the first time, three types of endurance failure behaviors in TMO based RRAM. New physical mechanisms are proposed to clarify origins these failures. A physically-based optimized switching mode is developed improve TMO-RRAM. significantly enhanced >;10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> cycles was demonstrated HfO <sub xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /TiO /HfO devices.
Hardware implementation of neuromorphic computing is attractive as a paradigm beyond the conventional digital computing. In this work, we show that SET (off-to-on) transition metal oxide resistive switching memory becomes probabilistic under weak programming condition. The variability binary synaptic device implements stochastic learning rule. Such was statistically measured and modeled for simulation winner-take-all network competitive learning. illustrates with such learning, orientation...
Abstract A microscopic mechanism for the unipolar resistive switching phenomenon in nickel oxides is proposed based on thermal decomposition of oxygen ions from oxygen-rich clusters and their recombination with electron-depleted vacancies induced by local electric field conductive filaments. The physical feature confirmed x-ray photoelectron spectroscopy, transmission electron microscopy electrical measurements as-deposited NiO x samples. deduced formulae under reasonable approximations...
Double-layer stacked HfOx vertical RRAM is demonstrated for 3D cross-point architecture using a cost-effective fabrication process. Electrode/oxide interface engineering TiON layer results in non-linear I-V suitable the selector-less array. The fabricated shows excellent performances such as reset current (<;50μA), switching speed (~50ns), endurance (>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> cycles), half-selected read...
A SPICE model of oxide-based resistive random access memory (RRAM) for dc and transient behaviors is developed based on the conductive filament evolution implemented in large-scale array simulation. The simulations one transistor-one resistor RRAM up to 16 kb with wire resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">wire</sub> ) capacitance (C indicate that: 1) resistance-capacitance delay during RESET leakage current SET have...
In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in D-band, G-band, 2D-band signals of SLG during consecutive electrical programming repeated for nine cycles. addition, inserted enables reduction RESET current 22 times power consumption 47 times. Collectively, our results that monitoring a resistive random access memory...
Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic 1.52 μW set power (1 μA@1.52 V) 1.12 reset μA@1.12 was obtained in the HfO2/TiOx (RRAM) by controlling oxygen content of layer. Besides, influence during process on properties would be discussed detail. The investigations indicated that "soft breakdown" occurred easily electrical forming/set RRAM high...