A5003875622- Advanced Thermoelectric Materials and Devices
- Thermal Expansion and Ionic Conductivity
- Thermal properties of materials
- Chalcogenide Semiconductor Thin Films
- Magnetic and transport properties of perovskites and related materials
- Thermal Radiation and Cooling Technologies
- Electrocatalysts for Energy Conversion
- Heusler alloys: electronic and magnetic properties
- Semiconductor materials and interfaces
- Advanced battery technologies research
- 2D Materials and Applications
- Electrochemical Analysis and Applications
- Quantum Dots Synthesis And Properties
- Phase-change materials and chalcogenides
- Solid-state spectroscopy and crystallography
- Advanced Photocatalysis Techniques
- Copper-based nanomaterials and applications
- Perovskite Materials and Applications
- Advanced Semiconductor Detectors and Materials
- Optical properties and cooling technologies in crystalline materials
- Electronic Packaging and Soldering Technologies
- Advancements in Battery Materials
- Semiconductor Quantum Structures and Devices
- Supercapacitor Materials and Fabrication
- Nanowire Synthesis and Applications
Yunnan Normal University
2015-2024
Kunming University
2019
Hiroshima University
2010-2012
State Key Laboratory of Advanced Technology For Materials Synthesis and Processing
2007-2008
Wuhan University of Technology
2007-2008
Developing oxygen evolution reaction (OER) electrocatalysts with ampere-level activity and durability is an open challenge toward the final industrial application. Here, a nanoporous crystalline/amorphous nickel–iron oxyhydroxide heterostructure abundant Fe2+ (c/a NiFe(II, III)OxHy) by partially substituting Ni2+ reported. Combination of X-ray absorption spectroscopy, in situ Raman, density functional theory investigation suggested that structure cation defects vacancy conducive to lattice...
Single crystalline samples of type-VIII clathrate Ba8Ga16–xCuxSn30 (0 ≤ x 0.033) were prepared by the Sn-flux method. Upon substituting Cu for Ga, carrier mobility at 300 K increases twice while density stays in range 3.1−4.2×1019/cm3. Consequently, electrical resistivity is decreased from 5.3 mΩcm = 0 to 3.2 0.033. Irrespective x, Seebeck coefficient largely negative and linearly changes with temperature < T 600 K. The thermal conductivity 0.68−0.74 W/Km all samples. dimensionless...
Type-I clathrates YbxBa8−xGa16Ge30 (x=0–1.3) filled by ytterbium and barium were synthesized melting reaction method combined with spark plasma sintering method. The structure thermoelectric properties of double-atoms-filled clathrate compounds are investigated. X-ray diffraction patterns Rietveld analysis reveal that the prepared this type-I clathrates. filling atoms exhibit atomic displacement parameters larger than framework atoms. All specimens show n-type conduction room temperature...
Single-crystalline samples of type-VIII clathrate Ba8Ga16−xAlxSn30 (0≤x≤12) were grown from Sn flux to characterize the structural and thermoelectric properties 300 600 K. The lattice parameter increases by 0.5% as x is increased 10.5 whose value solubility limit Al. Seebeck coefficients all are largely negative absolute values increase approximately μV/K on heating This large thermopower coexists with metallic behavior in electrical resistivity. resistivity for 1≤x≤6 at K range 3.3–3.8 mΩ...
Using group-III atom Al as doping element, Ba8Ga16AlxGe30−x (x=1.0, 2.0, 3.0, 4.0, and 5.0) type-I clathrates with different content were synthesized by combining melting reaction spark plasma sintering method. The effects of on thermoelectric properties are investigated. X-ray diffraction patterns Rietveld analysis reveal that the compounds prepared this method preference for 6c site. substitutions do not affect atomic displacement parameters (ADPs) framework atoms (Ge∕Ga) filled (Ba)...
Zn-doping Ba8Ga16ZnxGe30−x (x=2.4, 2.6, 2.8, 3.0, 3.2) clathrates with different Zn contents were synthesized by combining the solid-state reaction spark plasma sintering method. The effects of content on thermoelectric properties investigated. results show that all specimens exhibit p-type conduction characteristics. electrical conductivity, room-temperature carrier mobility, and thermal conductivity decrease increasing for Zn-doped compounds, while concentration Np increases content....
This study focuses on the effect of Cu doping thermoelectric properties BiSbTe 3 (BST) alloys.
In and Sn codoped β‐Zn 4 Sb 3 single crystals were prepared by a Sn‐flux method according to the formula Zn 4.4 x ( = 0–0.5). The thermal weight loss is suppressed completely until melting point of crystals. All exhibit p‐type conduction. carrier mobility increased, compared polycrystalline sample. samples possess relatively high electrical conductivity, reaching 6.3 × 10 S/m for sample with 0.18. Seebeck coefficient enhanced on increasing total content Sn. 0.5 exhibits excellent properties,...