Atomically thin transition metal dichalcogenides have emerged as promising candidates for sensitive photodetection. Here, we report a photoconductivity study of biased mono- and bilayer molybdenum disulfide field-effect transistors. We identify photovoltaic photoconductive effects, which both show strong photogain. The effect is described shift in transistor threshold voltage due to charge transfer from the channel nearby molecules, including SiO2 surface-bound water. attributed trapping...

Abstract The advent of microcomputers in the 1970s has dramatically changed our society. Since then, microprocessors have been made almost exclusively from silicon, but ever-increasing demand for higher integration density and speed, lower power consumption better integrability with everyday goods prompted search alternatives. Germanium III–V compound semiconductors are being considered promising candidates future high-performance processor generations chips based on thin-film plastic...

Transparent conductors based on few-layer graphene (FLG) intercalated with ferric chloride (FeCl3) have an outstandingly low sheet resistance and high optical transparency. FeCl3-FLGs outperform the current limit of transparent such as indium tin oxide, carbon-nanotube films, doped materials. This makes FeCl3-FLG materials best conductor for optoelectronic devices. Future wearable electronics, displays photovoltaic devices require which are mechanically flexible, lightweight low-cost, in...

Strain engineering is widely used in material science to tune the (opto-)electronic properties of materials and enhance performance devices. Two-dimensional atomic crystals are a versatile playground study influence strain, as they can sustain very large deformations without breaking. Various optical techniques have been employed probe strain two-dimensional materials, including micro-Raman photoluminescence spectroscopy. Here we demonstrate that second harmonic generation constitutes an...

Optical spectroscopy is an indispensable technique in almost all areas of scientific research and industrial applications. After its acquisition, optical spectrum usually further processed using a mathematical algorithm to classify or quantify the measurement results. Here we present design realization smart photodetector that provides such information directly without need explicitly record spectrum. This achieved by tailoring spectral responsivity device specific purpose. In-sensor...

We investigate the generation of THz pulses when arrays silver nanoparticles are irradiated by femtosecond laser pulses, providing first reproducible experimental evidence in support recent theoretical predictions such an effect. assess our results context a model where photoelectrons produced plasmon-mediated multiphoton excitation, and radiation is generated via acceleration ejected electrons ponderomotive forces arising from inhomogeneous plasmon field. By exploring dependence emission on...

Paper is the ideal substrate for development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated a channel-array approach, combining advantages two large-area techniques: chemical vapor deposition inkjet-printing.The first allows...

The performance of MoS2 transistors is strongly affected by charge trapping in oxide traps with very broad distributions time constants. These defects degrade the mobility and additionally lead to hysteresis gate transfer characteristics, which presents a crucial reliability issue for these new technologies. Here we perform detailed study double-gated FETs show that this nothing else than combination threshold voltage shifts resulting from positive negative bias-temperature instabilities....

We study THz pulses generated from plasmonic metal nanostructures under femtosecond illumination of near-IR light. find two regimes excitation, according to the order dependence fluence on incident intensity: less then second at low intensities, changing approximately fourth for higher intensities. These are most likely associated with generation mechanisms: optical rectification, and ponderomotive acceleration ejected electrons. data provide evidence that both mechanisms can be work in same...

Molybdenum disulphide (MoS 2 ) thin films have received increasing interest as device-active layers in low-dimensional electronics and also novel catalysts electrochemical processes such the hydrogen evolution reaction (HER) water splitting. For both types of applications, industrially scalable fabrication methods with good control over MoS film properties are crucial. Here, we investigate physical vapour deposition (PVD) by magnetron sputtering. thicknesses from ≈10 to ≈1000 nm were...

Abstract Heterostructures based on atomically thin semiconductors are considered a promising emerging technology for the realization of ultrathin and ultralight photovoltaic solar cells flexible substrates. Much progress has been made in recent years technological level, but clear picture physical processes that govern response remains elusive. Here, we present device model is able to fully reproduce current–voltage characteristics type-II van der Waals heterojunctions under optical...

Two-dimensional (2D) semiconductors are currently considered a very promising alternative to Si for channel applications in next-generation field-effect transistors of sub-5 nm designs. However, their huge potential cannot be fully exploited owing lack competitive insulators which required effectively separate the from gate, while being scalable down few nanometers thicknesses. Recently we have made an attempt at addressing this issue by using crystalline CaF2 and demonstrated MoS2 devices...

Abstract Complementary electronics has represented the corner stone of digital era, and silicon technology enabled this accomplishment. At dawn flexible wearable age, seek for new materials enabling integration complementary metal-oxide semiconductor (CMOS) on substrates, finds in low-dimensional (either 1D or 2D) extraordinary candidates. Here, we show that main building blocks can be obtained by exploiting 2D like molybdenum disulfide, hexagonal boron nitride such as carbon nanotubes...

Transition metal dichalcogenides (TMDCs) are a promising class of two‐dimensional (2D) materials for flexible electronic applications due to their low integration temperature, good properties, and excellent mechanical flexibility. Moreover, TMDCs offer the possibility co‐integrating both n‐ p‐type transistors on same substrate, enabling realization complementary metal‐oxide‐semiconductor (CMOS) circuits. In this study, n‐type MoS 2 field‐effect (FETs), WSe ‐FETs integrated foil substrate...

Abstract Pixel binning is a technique, widely used in optical image acquisition and spectroscopy, which adjacent detector elements of an sensor are combined into larger pixels. This reduces the amount data to be processed as well impact noise, but comes at cost loss information. Here, we push concept its limit by combining large fraction single “superpixel” that extends over whole face chip. For given pattern recognition task, optimal shape determined from training using machine learning...

TiO 2 nanosheets are produced with a mass scalable and F-free bottom-up approach. The material is formulated into stable water-based ink exploited in printed diodes transistors, showing very good dielectric properties.

Thermal tuning of the optical refractive index in waveguides to control light phase accumulation is essential photonic-integrated systems and applications. In silicon photonics, microheaters are mainly realized by metal wires or highly doped lines, placed at a safe distance (∼1 μm) from waveguide avoid considerable loss. However, this poses significant limitation for heating efficiency because excessive free-carrier loss when heater brought closer path. work, we present new concept using...

We report a charge-based analytic and explicit compact model for field-effect transistors (FETs) based on 2-D materials (2DMs), the simulation of 2DM-based analog digital circuits. The device electrostatics is handled by invoking density states Fermi-Dirac statistics that are later combined with Lambert-W function Halley's correction to eventually obtain expressions electron hole charges, which exploited in calculation drift-diffusion currents both carriers. Furthermore, charge extended...

We report results from an investigation into the plasmonic properties of metallic nanoparticles supported by graphene fabricated using two different methods. In first method we used electron-beam lithography to produce ordered arrays nanoparticles. second a technique based on electrochemistry random arrangements Our show that both pristine and more conducting intercalated variant are excellent substrates for owing their transparency atomically thin nature, opening interesting route building...

Abstract 1/ f noise represents the dominant source of in low‐frequency range several physical systems, including field‐effect transistors. Its investigation can provide very important information on fabrication process, highlighting steps that are more prone to introduction defects. Here, bilayer MoS 2 transistors paper with inkjet‐printed Ag contacts and hBN dielectric is investigated. These devices promising building blocks for future low‐cost, flexible, easily recyclable disposable...

MoS2 nanoswitches have shown superb ultralow switching energies without excessive leakage currents. However, the debate about origin and volatility of electrical is unresolved due to lack adequate nanoimaging devices in operando. Here, three optical techniques are combined perform first noninvasive situ characterization nanosized devices. This study reveals volatile threshold resistive intercalation metallic atoms from electrodes directly between Mo S atoms, assistance sulfur vacancies. A...