A5103514590- ZnO doping and properties
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- GaN-based semiconductor devices and materials
- Laser-induced spectroscopy and plasma
- Electronic and Structural Properties of Oxides
- Laser Material Processing Techniques
- Cold Atom Physics and Bose-Einstein Condensates
- Diamond and Carbon-based Materials Research
- Acoustic Wave Resonator Technologies
- Atomic and Subatomic Physics Research
- Advanced Frequency and Time Standards
- Semiconductor materials and devices
Chinese Academy of Sciences
2007-2025
National Time Service Center
2025
Institute of Semiconductors
2007-2011
National Taiwan University of Science and Technology
2006-2008
MgO may be a promising gate dielectric and surface passivation film for InN based devices the valence band offset of MgO∕InN heterojunction has been measured by x-ray photoelectron spectroscopy. The is determined to 1.59±0.23eV. Given experimental gap 7.83 MgO, type-I with conduction 5.54±0.23eV found. accurate determination offsets important use electronic devices.
Zinc oxide nanodonuts have been synthesized using vapor-phase transport method. powder, graphite and erbium powder were mixed with a molar ratio of 1:1:0.2 heated at 1050°C in flowing argon environment. Perfectly donut-shaped nanostructures outer diameters ranging from 450to850nm observed. The inner diameter the zinc donut varies 75to95nm vertical distance highest point to lowest vary 85to130nm. composition nanodonut was analyzed Auger electron spectroscopy found be mainly oxide. Diffusion...
ZnO thin films were grown by metal-organic chemical vapour deposition using methanol as oxidant. Rapid thermal annealing (RTA) was performed in an ambient of one atmosphere oxygen at 900 °C for 60 s. The RTA properties the have been characterized scanning electron microscopy, x-ray diffraction, photoelectron spectroscopy, photoluminescence spectra and Hall measurement. grains film well coalesced surface became denser after RTA. full-width half maximum rocking curves only 496 arcsec. also...
ZnO film with high crystal quality was prepared on InN/sapphire substrate by metal organic chemical vapor deposition. The diffusion of nitrogen (N) into investigated via Auger electron spectroscopy (AES), x-ray photoelectron (XPS), and low-temperature photoluminescence (LT-PL). AES revealed that some N atoms out-diffused after a rapid thermal annealing (RTA) process, while most the In remained in InN layers, which confirmed XPS. LT-PL spectra at 10 K further diffused upper acted as acceptors...
Erbium-doped ZnO has been prepared by vapor-phase transport. powder, graphite and Er2O3 powder were mixed at a molar ratio of 1:1:0.2 heated 1054 °C. was deposited on n-type (100)Si wafers located in the same temperature zone. The photoluminescence as-deposited sample shows strong band-gap emission near 378 nm. After annealing, green emissions 548, 566, 576, 585, 595 nm observed, which correspond to 4 f inner shell transition erbium from 2H11/2 4I15/2 4S3/2 4I15/2. Our results indicate that...